| AM/AM and AM/PM distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers LC Nunes, PM Cabral, JC Pedro IEEE Transactions on Microwave Theory and Techniques 62 (4), 799-809, 2014 | 99 | 2014 |
| A simple method to estimate the output power and efficiency load–pull contours of class-B power amplifiers JC Pedro, PM Cabral IEEE Transactions on Microwave Theory and Techniques 63 (4), 1239-1249, 2015 | 60 | 2015 |
| Compensation of long-term memory effects on GaN HEMT-based power amplifiers FM Barradas, LC Nunes, TR Cunha, PM Lavrador, PM Cabral, JC Pedro IEEE Transactions on Microwave Theory and Techniques 65 (9), 3379-3388, 2017 | 57 | 2017 |
| Soft compression and the origins of nonlinear behavior of GaN HEMTs JC Pedro, LC Nunes, PM Cabral 2014 44th European Microwave Conference, 1297-1300, 2014 | 57 | 2014 |
| An accurate characterization of capture time constants in GaN HEMTs JL Gomes, LC Nunes, CF Gonçalves, JC Pedro IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019 | 44 | 2019 |
| AM/PM distortion in GaN Doherty power amplifiers LC Nunes, PM Cabral, JC Pedro 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014 | 34 | 2014 |
| Nonlinear circuit simulation and modeling: fundamentals for microwave design JC Pedro, DE Root, J Xu, LC Nunes Cambridge University Press, 2018 | 30 | 2018 |
| Characterizing power amplifier static AM/PM with spectrum analyzer measurements TR Cunha, PM Cabral, LC Nunes 2014 IEEE 11th International Multi-Conference on Systems, Signals & Devices …, 2014 | 28 | 2014 |
| A physical model of power amplifiers AM/AM and AM/PM distortions and their internal relationship LC Nunes, PM Cabral, JC Pedro 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 24 | 2013 |
| A new nonlinear model extraction methodology for GaN HEMTs subject to trapping effects LC Nunes, JM Gomes, PM Cabral, JC Pedro 2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015 | 23 | 2015 |
| Dynamic supply voltage control for PA output power correction under variable loading scenarios CF Gonçalves, FM Barradas, LC Nunes, PM Cabral, JC Pedro IEEE Transactions on Microwave Theory and Techniques 69 (1), 745-755, 2020 | 18 | 2020 |
| Efficiency degradation analysis in wideband power amplifiers LC Nunes, DR Barros, PM Cabral, JC Pedro IEEE Transactions on Microwave Theory and Techniques 66 (12), 5640-5651, 2018 | 17 | 2018 |
| Quasi-load insensitive Doherty PA using supply voltage and input excitation adaptation CF Gonçalves, FM Barradas, LC Nunes, PM Cabral, JC Pedro IEEE Transactions on Microwave Theory and Techniques 70 (1), 779-789, 2021 | 16 | 2021 |
| Pulsed I/V and S‐parameters measurement system for isodynamic characterization of power GaN HEMT transistors CF Goncalves, LC Nunes, PM Cabral, JC Pedro International Journal of RF and Microwave Computer‐Aided Engineering 28 (8 …, 2018 | 16 | 2018 |
| A simple method to extract trapping time constants of GaN HEMTs LC Nunes, JL Gomes, PM Cabral, JC Pedro 2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018 | 16 | 2018 |
| The impact of long-term memory effects on the linearizability of GaN HEMT-based power amplifiers JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ... IEEE Transactions on Microwave Theory and Techniques 70 (2), 1377-1390, 2021 | 15 | 2021 |
| New transistor behavioral model formulation suitable for Doherty PA design J Louro, C Belchior, DR Barros, FM Barradas, LC Nunes, PM Cabral, ... IEEE Transactions on Microwave Theory and Techniques 69 (4), 2138-2147, 2021 | 15 | 2021 |
| Characterization, modeling, and compensation of the dynamic self-biasing behavior of GaN HEMT-based power amplifiers PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020 | 14 | 2020 |
| Accurate linearization with low-complexity models using cascaded digital predistortion systems FM Barradas, LC Nunes, JC Pedro, TR Cunha, PM Lavrador, PM Cabral IEEE microwave magazine 16 (1), 94-103, 2015 | 13 | 2015 |
| A review of memory effects in AlGaN/GaN HEMT based RF PAs J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes 2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021 | 11 | 2021 |
Jose Carlos PedroEmail confirmado em ua.pt
