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L. C. Nunes
L. C. Nunes
Research Assistant at Universidade de Aveiro
Verified email at ua.pt
Title
Cited by
Cited by
Year
AM/AM and AM/PM distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers
LC Nunes, PM Cabral, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 62 (4), 799-809, 2014
962014
A simple method to estimate the output power and efficiency load–pull contours of class-B power amplifiers
JC Pedro, PM Cabral
IEEE Transactions on Microwave Theory and Techniques 63 (4), 1239-1249, 2015
592015
Soft compression and the origins of nonlinear behavior of GaN HEMTs
JC Pedro, LC Nunes, PM Cabral
2014 44th European Microwave Conference, 1297-1300, 2014
572014
Compensation of long-term memory effects on GaN HEMT-based power amplifiers
FM Barradas, LC Nunes, TR Cunha, PM Lavrador, PM Cabral, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 65 (9), 3379-3388, 2017
562017
An accurate characterization of capture time constants in GaN HEMTs
JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019
412019
AM/PM distortion in GaN Doherty power amplifiers
LC Nunes, PM Cabral, JC Pedro
2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-4, 2014
342014
Nonlinear circuit simulation and modeling: fundamentals for microwave design
JC Pedro, DE Root, J Xu, LC Nunes
Cambridge University Press, 2018
292018
Characterizing power amplifier static AM/PM with spectrum analyzer measurements
TR Cunha, PM Cabral, LC Nunes
2014 IEEE 11th International Multi-Conference on Systems, Signals & Devices …, 2014
282014
A physical model of power amplifiers AM/AM and AM/PM distortions and their internal relationship
LC Nunes, PM Cabral, JC Pedro
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
242013
A new nonlinear model extraction methodology for GaN HEMTs subject to trapping effects
LC Nunes, JM Gomes, PM Cabral, JC Pedro
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
232015
Efficiency degradation analysis in wideband power amplifiers
LC Nunes, DR Barros, PM Cabral, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 66 (12), 5640-5651, 2018
172018
Pulsed I/V and S‐parameters measurement system for isodynamic characterization of power GaN HEMT transistors
CF Goncalves, LC Nunes, PM Cabral, JC Pedro
International Journal of RF and Microwave Computer‐Aided Engineering 28 (8 …, 2018
162018
A simple method to extract trapping time constants of GaN HEMTs
LC Nunes, JL Gomes, PM Cabral, JC Pedro
2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018
162018
Quasi-load insensitive Doherty PA using supply voltage and input excitation adaptation
CF Gonçalves, FM Barradas, LC Nunes, PM Cabral, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 70 (1), 779-789, 2021
152021
Dynamic supply voltage control for PA output power correction under variable loading scenarios
CF Gonçalves, FM Barradas, LC Nunes, PM Cabral, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 745-755, 2020
152020
The impact of long-term memory effects on the linearizability of GaN HEMT-based power amplifiers
JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ...
IEEE Transactions on Microwave Theory and Techniques 70 (2), 1377-1390, 2021
142021
New transistor behavioral model formulation suitable for Doherty PA design
J Louro, C Belchior, DR Barros, FM Barradas, LC Nunes, PM Cabral, ...
IEEE Transactions on Microwave Theory and Techniques 69 (4), 2138-2147, 2021
142021
Accurate linearization with low-complexity models using cascaded digital predistortion systems
FM Barradas, LC Nunes, JC Pedro, TR Cunha, PM Lavrador, PM Cabral
IEEE microwave magazine 16 (1), 94-103, 2015
132015
Characterization, modeling, and compensation of the dynamic self-biasing behavior of GaN HEMT-based power amplifiers
PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020
122020
A review of memory effects in AlGaN/GaN HEMT based RF PAs
J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes
2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021
112021
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