Raphael SOMMET
Raphael SOMMET
Université de Limoges
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Amplitude and phase noise of magnetic tunnel junction oscillators
M Quinsat, D Gusakova, JF Sierra, JP Michel, D Houssameddine, ...
Applied Physics Letters 97 (18), 2010
Identification of GaN buffer traps in microwave power AlGaN/GaN HEMTs through low frequency S-parameters measurements and TCAD-based physical device simulations
NK Subramani, J Couvidat, A Al Hajjar, JC Nallatamby, R Sommet, ...
IEEE Journal of the Electron Devices Society 5 (3), 175-181, 2017
Steady state analysis of free or forced oscillators by harmonic balance and stability investigation of periodic and quasi‐periodic regimes
E Ngoya, A Suárez, R Sommet, R Quéré
International Journal of Microwave and Millimeter‐Wave Computer‐Aided …, 1995
A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities
T Peyretaillade, M Perez, S Mons, R Sommet, P Auxemery, JC Lalaurie, ...
1997 IEEE MTT-S International Microwave Symposium Digest 3, 1515-1518, 1997
High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- BiCMOS Process for RF-Power Applications
D Muller, A Giry, F Judong, C Rossato, F Blanchet, B Szelag, AM Aguirre, ...
IEEE transactions on electron devices 54 (4), 861-868, 2007
Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance
R Sommet, G Mouginot, R Quéré, Z Ouarch, M Camiade
Microelectronics Journal 43 (9), 611-617, 2012
Behavioral thermal modeling for microwave power amplifier design
J Mazeau, R Sommet, D Caban-Chastas, E Gatard, R Quere, Y Mancuso
IEEE transactions on microwave theory and techniques 55 (11), 2290-2297, 2007
Characterization and modeling of nonlinear trapping effects in power SiC MESFETs
D Siriex, D Barataud, R Sommet, O Noblanc, Z Ouarch, C Brylinski, ...
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000
Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements
AK Sahoo, NK Subramani, JC Nallatamby, R Sommet, R Quéré, ...
2016 11th European Microwave Integrated Circuits Conference (EuMIC), 145-148, 2016
Characterization of parasitic resistances of AlN/GaN/AlGaN HEMTs through TCAD-based device simulations and on-wafer measurements
NK Subramani, AK Sahoo, JC Nallatamby, R Sommet, N Rolland, ...
IEEE Transactions on Microwave Theory and Techniques 64 (5), 1351-1358, 2016
Experimental characterization and modeling of the thermal behavior of SiGe HBTs
A El Rafei, A Saleh, R Sommet, JM Nebus, R Quere
IEEE transactions on electron devices 59 (7), 1921-1927, 2012
A design method for high efficiency class F HBT amplifiers
A Mallet, T Peyretailade, R Sommet, D Floriot, S Delage, JM Nebus, ...
1996 IEEE MTT-S International Microwave Symposium Digest 2, 855-858, 1996
Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15- m Ultrashort Gate Length
M Bouslama, V Gillet, C Chang, JC Nallatamby, R Sommet, M Prigent, ...
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2475-2482, 2019
From 3D thermal simulation of HBT devices to their thermal model integration into circuit simulators via Ritz vectors reduction technique
R Sommet, D Lopez, R Quéré
ITherm 2002. Eighth Intersociety Conference on Thermal and Thermomechanical …, 2002
An improved physics-based formulation of the microwave pin diode impedance
E Gatard, R Sommet, P Bouysse, R Quéré
IEEE microwave and Wireless components Letters 17 (3), 211-213, 2007
Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design
S Heckmann, R Sommet, JM Nebus, JC Jacquet, D Floriot, P Auxemery, ...
IEEE Transactions on Microwave theory and Techniques 50 (12), 2811-2819, 2002
Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
PV Raja, NK Subramani, F Gaillard, M Bouslama, R Sommet, ...
Electronics 10 (24), 3096, 2021
Electrical measurement of the thermal impedance of bipolar transistors
A El Rafei, R Sommet, R Quere
IEEE electron device letters 31 (9), 939-941, 2010
High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model
E Gatard, R Sommet, P Bouysse, R Quere, M Stanislawiak, JM Bureau
2007 European Microwave Integrated Circuit Conference, 72-75, 2007
Low frequency parasitic effects in RF transistors and their impact on power amplifier performances
R Quéré, R Sommet, P Bouysse, T Reveyrand, D Barataud, JP Teyssier, ...
WAMICON 2012 IEEE Wireless & Microwave Technology Conference, 1-5, 2012
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