Mark Lundstrom
Mark Lundstrom
Professor of Electrical and Computer Engineering, Purdue University
Email confirmado em - Página inicial
Citado por
Citado por
Ballistic carbon nanotube field-effect transistors
A Javey, J Guo, Q Wang, M Lundstrom, H Dai
nature 424 (6949), 654-657, 2003
Fundamentals of carrier transport, 2nd edn
M Lundstrom
Measurement Science and Technology 13 (2), 230-230, 2002
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ...
Nature materials 1 (4), 241-246, 2002
Sub-10 nm carbon nanotube transistor
AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
Theory of ballistic nanotransistors
A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003
High-field quasiballistic transport in short carbon nanotubes
A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai
Physical Review Letters 92 (10), 106804, 2004
Elementary scattering theory of the Si MOSFET
M Lundstrom
IEEE Electron Device Letters 18 (7), 361-363, 1997
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics
A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ...
Nano Letters 4 (3), 447-450, 2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays
A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ...
Nano letters 4 (7), 1319-1322, 2004
Essential physics of carrier transport in nanoscale MOSFETs
M Lundstrom, Z Ren
IEEE Transactions on Electron Devices 49 (1), 133-141, 2002
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ...
Nature Comm. 6, 2015
Moore's law forever?
M Lundstrom
Science 299 (5604), 210-211, 2003
Nanoscale transistors: device physics, modeling and simulation
M Lundstrom, J Guo
Springer Science & Business Media, 2006
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic
Journal of Applied physics 92 (7), 3730-3739, 2002
Performance comparison between pin tunneling transistors and conventional MOSFETs
SO Koswatta, MS Lundstrom, DE Nikonov
IEEE Transactions on Electron Devices 56 (3), 456-465, 2009
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
J Wang, E Polizzi, M Lundstrom
Journal of Applied Physics 96 (4), 2192-2203, 2004
Modeling of nanoscale devices
MP Anantram, MS Lundstrom, DE Nikonov
Proceedings of the IEEE 96 (9), 1511-1550, 2008
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors
J Guo, S Datta, M Lundstrom
IEEE transactions on electron devices 51 (2), 172-177, 2004
Performance projections for ballistic carbon nanotube field-effect transistors
J Guo, M Lundstrom, S Datta
Applied physics letters 80 (17), 3192-3194, 2002
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
Z Ren, R Venugopal, S Goasguen, S Datta, MS Lundstrom
IEEE Transactions on Electron Devices 50 (9), 1914-1925, 2003
O sistema não pode efectuar a operação agora. Tente mais tarde.
Artigos 1–20