Mark Lundstrom

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Supriyo DattaProfessor, Purdue UniversityEmail confirmado em purdue.edu
Jing GuoProfessor, University of FloridaEmail confirmado em ufl.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityEmail confirmado em purdue.edu
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityEmail confirmado em purdue.edu
Dmitri E. NikonovPrincipal Engineer, IntelEmail confirmado em intel.com
Ali JaveyProfessor of Electrical Engineering, UC BerkeleyEmail confirmado em eecs.berkeley.edu
Neophytos NeophytouSchool of Engineering, University of WarwickEmail confirmado em warwick.ac.uk
Hongjie DaiProfessor of chemistry, stanford universityEmail confirmado em stanford.edu
Jesse MaassenAssistant Professor of Physics, Dalhousie UniversityEmail confirmado em dal.ca
Changwook JeongSamsung ElectronicsEmail confirmado em samsung.com
Jing WangDirector of Device Research, Samsung Semiconductor Inc.Email confirmado em samsung.com
Xufeng WangPurdue UniversityEmail confirmado em purdue.edu
RASEONG KIMIntel CorporationEmail confirmado em intel.com
Jeffery L. GrayAssociate Professor of Electrical and Computer Engineering, Purdue UniversityEmail confirmado em purdue.edu
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeEmail confirmado em us.ibm.com
Mathieu LuisierETH ZurichEmail confirmado em iis.ee.ethz.ch
Richard AhrenkielFellow Emeritus, National Renewable Energy LaboratoryEmail confirmado em nrel.gov
Gengchiau LiangNational University of SingaporeEmail confirmado em nus.edu.sg
Sayed HasanIntel CorporationEmail confirmado em intel.com
avik W ghoshProfessor, University of Virginia, Electrical EngineeringEmail confirmado em virginia.edu

Mark Lundstrom

Professor of Electrical and Computer Engineering, Purdue University

Email confirmado em purdue.edu - Página inicial

electronic devices and materials


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003	3776	2003
Fundamentals of carrier transport M Lundstrom Cambridge university press, 2009	1750	2009
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002	1322	2002
Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012	919	2012
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003	847	2003
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004	768	2004
Elementary scattering theory of the Si MOSFET M Lundstrom IEEE Electron Device Letters 18 (7), 361-363, 1997	750	1997
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004	729	2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004	686	2004
Essential physics of carrier transport in nanoscale MOSFETs M Lundstrom, Z Ren IEEE Transactions on Electron Devices 49 (1), 133-141, 2002	668	2002
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic Journal of Applied physics 92 (7), 3730-3739, 2002	532	2002
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006	526	2006
Moore's law forever? M Lundstrom Science 299 (5604), 210-211, 2003	507	2003
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ... Nature Comm. 6, 2015	482	2015
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Wang, E Polizzi, M Lundstrom Journal of Applied Physics 96 (4), 2192-2203, 2004	425	2004
Fundamentals of carrier transport M Lundstrom Addison-Wesley, 1990	417	1990
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002	372	2002
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004	369	2004
Performance comparison between pin tunneling transistors and conventional MOSFETs SO Koswatta, MS Lundstrom, DE Nikonov IEEE Transactions on Electron Devices 56 (3), 456-465, 2009	366	2009
Modeling of nanoscale devices MP Anantram, MS Lundstrom, DE Nikonov Proceedings of the IEEE 96 (9), 1511-1550, 2008	347	2008

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