Mark Lundstrom

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Supriyo DattaProfessor, Purdue UniversityEmail confirmado em purdue.edu
Jing GuoProfessor, University of FloridaEmail confirmado em ufl.edu
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityEmail confirmado em purdue.edu
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityEmail confirmado em purdue.edu
Dmitri E. NikonovPrincipal Engineer, IntelEmail confirmado em intel.com
Ali JaveyProfessor of Electrical Engineering, UC BerkeleyEmail confirmado em eecs.berkeley.edu
Jesse MaassenAssociate Professor of Physics, Dalhousie UniversityEmail confirmado em dal.ca
Neophytos NeophytouSchool of Engineering, University of WarwickEmail confirmado em warwick.ac.uk
Hongjie DaiProfessor of chemistry, stanford universityEmail confirmado em stanford.edu
Changwook JeongAssociate Professor, Graduate School of Semicondutor Materials and Devices Engineering, UNISTEmail confirmado em unist.ac.kr
Jing WangNVIDIA CorporationEmail confirmado em nvidia.com
Xufeng WangPurdue UniversityEmail confirmado em purdue.edu
RASEONG KIMIntel CorporationEmail confirmado em intel.com
Jeffery L. GrayAssociate Professor of Electrical and Computer Engineering, Purdue UniversityEmail confirmado em purdue.edu
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeEmail confirmado em us.ibm.com
Mathieu LuisierETH ZurichEmail confirmado em iis.ee.ethz.ch
Richard AhrenkielFellow Emeritus, National Renewable Energy LaboratoryEmail confirmado em nrel.gov
Gengchiau LiangNational University of SingaporeEmail confirmado em nus.edu.sg
Sayed HasanIntel CorporationEmail confirmado em intel.com
avik W ghoshProfessor, University of Virginia, Electrical EngineeringEmail confirmado em virginia.edu

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Mark Lundstrom

Professor of Electrical and Computer Engineering, Purdue University

Email confirmado em purdue.edu - Página inicial

electronic devices and materials


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Ballistic carbon nanotube field-effect transistors A Javey, J Guo, Q Wang, M Lundstrom, H Dai nature 424 (6949), 654-657, 2003	3857	2003
Fundamentals of carrier transport M Lundstrom Measurement Science and Technology 13 (2), 230, 2002	1861	2002
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ... Nature materials 1 (4), 241-246, 2002	1347	2002
Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012	1016	2012
Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003	897	2003
High-field quasiballistic transport in short carbon nanotubes A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai Physical Review Letters 92 (10), 106804, 2004	777	2004
Elementary scattering theory of the Si MOSFET M Lundstrom IEEE Electron Device Letters 18 (7), 361-363, 1997	764	1997
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ... Nano Letters 4 (3), 447-450, 2004	740	2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ... Nano letters 4 (7), 1319-1322, 2004	713	2004
Essential physics of carrier transport in nanoscale MOSFETs M Lundstrom, Z Ren IEEE Transactions on Electron Devices 49 (1), 133-141, 2002	690	2002
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ... Nature Comm. 6, 2015	588	2015
Moore's law forever? M Lundstrom Science 299 (5604), 210-211, 2003	553	2003
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic Journal of Applied physics 92 (7), 3730-3739, 2002	549	2002
Nanoscale transistors: device physics, modeling and simulation M Lundstrom, J Guo Springer Science & Business Media, 2006	539	2006
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Wang, E Polizzi, M Lundstrom Journal of Applied Physics 96 (4), 2192-2203, 2004	432	2004
Fundamentals of carrier transport M Lundstrom Addison-Wesley, 1990	426	1990
Performance comparison between pin tunneling transistors and conventional MOSFETs SO Koswatta, MS Lundstrom, DE Nikonov IEEE Transactions on Electron Devices 56 (3), 456-465, 2009	413	2009
Modeling of nanoscale devices MP Anantram, MS Lundstrom, DE Nikonov Proceedings of the IEEE 96 (9), 1511-1550, 2008	384	2008
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors J Guo, S Datta, M Lundstrom IEEE transactions on electron devices 51 (2), 172-177, 2004	380	2004
Performance projections for ballistic carbon nanotube field-effect transistors J Guo, M Lundstrom, S Datta Applied physics letters 80 (17), 3192-3194, 2002	373	2002

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