Mark Lundstrom
Mark Lundstrom
Professor of Electrical and Computer Engineering, Purdue University
Email confirmado em purdue.edu - Página inicial
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Ballistic carbon nanotube field-effect transistors
A Javey, J Guo, Q Wang, M Lundstrom, H Dai
nature 424 (6949), 654-657, 2003
37762003
Fundamentals of carrier transport
M Lundstrom
Cambridge university press, 2009
17502009
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ...
Nature materials 1 (4), 241-246, 2002
13222002
Sub-10 nm carbon nanotube transistor
AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
9192012
Theory of ballistic nanotransistors
A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003
8472003
High-field quasiballistic transport in short carbon nanotubes
A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai
Physical Review Letters 92 (10), 106804, 2004
7682004
Elementary scattering theory of the Si MOSFET
M Lundstrom
IEEE Electron Device Letters 18 (7), 361-363, 1997
7501997
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics
A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ...
Nano Letters 4 (3), 447-450, 2004
7292004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays
A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ...
Nano letters 4 (7), 1319-1322, 2004
6862004
Essential physics of carrier transport in nanoscale MOSFETs
M Lundstrom, Z Ren
IEEE Transactions on Electron Devices 49 (1), 133-141, 2002
6682002
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
R Venugopal, Z Ren, S Datta, MS Lundstrom, D Jovanovic
Journal of Applied physics 92 (7), 3730-3739, 2002
5322002
Nanoscale transistors: device physics, modeling and simulation
M Lundstrom, J Guo
Springer Science & Business Media, 2006
5262006
Moore's law forever?
M Lundstrom
Science 299 (5604), 210-211, 2003
5072003
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Mark S. Lundstrom, Peide D ...
Nature Comm. 6, 2015
4822015
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
J Wang, E Polizzi, M Lundstrom
Journal of Applied Physics 96 (4), 2192-2203, 2004
4252004
Fundamentals of carrier transport
M Lundstrom
Addison-Wesley, 1990
4171990
Performance projections for ballistic carbon nanotube field-effect transistors
J Guo, M Lundstrom, S Datta
Applied physics letters 80 (17), 3192-3194, 2002
3722002
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors
J Guo, S Datta, M Lundstrom
IEEE transactions on electron devices 51 (2), 172-177, 2004
3692004
Performance comparison between pin tunneling transistors and conventional MOSFETs
SO Koswatta, MS Lundstrom, DE Nikonov
IEEE Transactions on Electron Devices 56 (3), 456-465, 2009
3662009
Modeling of nanoscale devices
MP Anantram, MS Lundstrom, DE Nikonov
Proceedings of the IEEE 96 (9), 1511-1550, 2008
3472008
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