Asal Kiazadeh
Asal Kiazadeh
Associate researcher
Verified email at - Homepage
Cited by
Cited by
UV-mediated photochemical treatment for low-temperature oxide-based thin-film transistors
E Carlos, R Branquinho, A Kiazadeh, P Barquinha, R Martins, E Fortunato
ACS applied materials & interfaces 8 (45), 31100-31108, 2016
Towards environmental friendly solution-based ZTO/AlOx TFTs
R Branquinho, D Salgueiro, A Santa, A Kiazadeh, P Barquinha, L Pereira, ...
Semiconductor Science and Technology 30 (2), 024007, 2015
Recent progress in solution‐based metal oxide resistive switching devices
E Carlos, R Branquinho, R Martins, A Kiazadeh, E Fortunato
Advanced Materials 33 (7), 2004328, 2021
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
A Kiazadeh, HL Gomes, P Barquinha, J Martins, A Rovisco, JV Pinto, ...
Applied Physics Letters 109 (5), 051606, 2016
Boosting electrical performance of high-κ nanomultilayer dielectrics and electronic devices by combining solution combustion synthesis and UV irradiation
E Carlos, R Branquinho, A Kiazadeh, J Martins, P Barquinha, R Martins, ...
ACS applied materials & interfaces 9 (46), 40428-40437, 2017
Influence of channel length scaling on InGaZnO TFTs characteristics: Unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance
PG Bahubalindruni, A Kiazadeh, A Sacchetti, J Martins, A Rovisco, ...
Journal of Display Technology 12 (6), 515-518, 2016
Memristors using solution-based IGZO nanoparticles
J Rosa, A Kiazadeh, L Santos, J Deuermeier, R Martins, HL Gomes, ...
ACS omega 2 (11), 8366-8372, 2017
Solution based zinc tin oxide TFTs: The dual role of the organic solvent
D Salgueiro, A Kiazadeh, R Branquinho, L Santos, P Barquinha, ...
Journal of Physics D: Applied Physics 50 (6), 065106, 2017
Bias stress and temperature impact on InGaZnO TFTs and circuits
J Martins, P Bahubalindruni, A Rovisco, A Kiazadeh, R Martins, ...
Materials 10 (6), 680, 2017
Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications
M Pereira, J Deuermeier, R Nogueira, PA Carvalho, R Martins, ...
Advanced Electronic Materials 6 (10), 2000242, 2020
Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device
J Deuermeier, A Kiazadeh, A Klein, R Martins, E Fortunato
Nanomaterials 9 (2), 289, 2019
Low-frequency diffusion noise in resistive-switching memories based on metal–oxide polymer structure
PRF Rocha, HL Gomes, LKJ Vandamme, Q Chen, A Kiazadeh, ...
IEEE transactions on electron devices 59 (9), 2483-2487, 2012
Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
E Carlos, A Kiazadeh, J Deuermeier, R Branquinho, R Martins, ...
Nanotechnology 29 (34), 345206, 2018
Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes
Q Chen, BF Bory, A Kiazadeh, PRF Rocha, HL Gomes, F Verbakel, ...
Applied Physics Letters 99 (8), 177, 2011
The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories
PRF Rocha, A Kiazadeh, DM De Leeuw, SCJ Meskers, F Verbakel, ...
Journal of Applied Physics 113 (13), 134504, 2013
“Electro‐Typing” on a Carbon‐Nanoparticles‐Filled Polymeric Film using Conducting Atomic Force Microscopy
S Goswami, S Nandy, AN Banerjee, A Kiazadeh, GR Dillip, JV Pinto, ...
Advanced Materials 29 (47), 1703079, 2017
Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface
J Deuermeier, TJM Bayer, H Yanagi, A Kiazadeh, R Martins, A Klein, ...
Materials Research Express 3 (4), 046404, 2016
2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes
N Casa Branca, J Deuermeier, J Martins, E Carlos, M Pereira, R Martins, ...
Advanced Electronic Materials 6 (2), 1900958, 2020
Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
A Kiazadeh, HL Gomes, AMR da Costa, JA Moreira, DM De Leeuw, ...
Thin Solid Films 522, 407-411, 2012
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
A Kiazadeh, D Salgueiro, R Branquinho, J Pinto, HL Gomes, P Barquinha, ...
APL Materials 3 (6), 062804, 2015
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