Band gap of InAs 1− x Sb x with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ...
Physical Review B 86 (24), 245205, 2012
105 2012 Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Applied Physics Letters 108 (22), 2016
94 2016 Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ...
Applied Physics Letters 103 (5), 2013
49 2013 Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors Y Lin, D Donetsky, D Wang, D Westerfeld, G Kipshidze, L Shterengas, ...
Journal of Electronic Materials 44, 3360-3366, 2015
41 2015 Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ...
Applied Physics Letters 102 (11), 2013
41 2013 Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ...
Infrared Technology and Applications XXXVII 8012, 318-327, 2011
41 2011 Electronic properties of unstrained unrelaxed narrow gap InAsxSb1− x alloys S Suchalkin, J Ludwig, G Belenky, B Laikhtman, G Kipshidze, Y Lin, ...
Journal of Physics D: Applied Physics 49 (10), 105101, 2016
35 2016 Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained … Y Lin, D Wang, D Donetsky, L Shterengas, G Kipshidze, G Belenky, ...
Journal of electronic materials 42, 918-926, 2013
34 2013 Background and interface electron populations in InAs0. 58Sb0. 42 SP Svensson, FJ Crowne, HS Hier, WL Sarney, WA Beck, Y Lin, ...
Semiconductor Science and Technology 30 (3), 035018, 2015
25 2015 Materials design parameters for infrared device applications based on III-V semiconductors SP Svensson, WL Sarney, D Donetsky, G Kipshidze, Y Lin, L Shterengas, ...
Applied Optics 56 (3), B58-B63, 2017
21 2017 Lattice parameter engineering for III–V long wave infrared photonics G Belenky, Y Lin, L Shterengas, D Donetsky, G Kipshidze, S Suchalkin
Electronics Letters 51 (19), 1521-1522, 2015
21 2015 GaSb-Based Type-I Quantum Well 3–3.5- M Ermolaev, Y Lin, L Shterengas, T Hosoda, G Kipshidze, S Suchalkin, ...
IEEE Photonics Technology Letters 30 (9), 869-872, 2018
18 2018 Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors Y Lin, D Wang, D Donetsky, G Kipshidze, L Shterengas, LE Vorobjev, ...
Semiconductor Science and Technology 29 (11), 112002, 2014
18 2014 InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies ZL Fang, YX Lin, JY Kang
Applied Physics Letters 98 (6), 2011
17 2011 Minority carrier lifetime in beryllium-doped InAs/InAsSb strained layer superlattices Y Lin, D Wang, D Donetsky, G Belenky, H Hier, WL Sarney, SP Svensson
Journal of electronic materials 43, 3184-3190, 2014
16 2014 Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb WL Sarney, SP Svensson, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Journal of Applied Physics 119 (21), 2016
13 2016 AlInAsSb for M-LWIR detectors WL Sarney, SP Svensson, D Wang, D Donetsky, G Kipshidze, ...
Journal of Crystal Growth 425, 357-359, 2015
12 2015 Effect of hole transport on performance of infrared type-II superlattice light emitting diodes Y Lin, S Suchalkin, G Kipshidze, T Hosoda, B Laikhtman, D Westerfeld, ...
Journal of Applied Physics 117 (16), 2015
8 2015 Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors D Wang, Y Lin, D Donetsky, L Shterengas, G Kipshidze, G Belenky, ...
Infrared Technology and Applications XXXVIII 8353, 376-386, 2012
8 2012 Infrared emitters and photodetectors with InAsSb bulk active regions D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, G Belenky, ...
Infrared Technology and Applications XXXIX 8704, 293-302, 2013
6 2013 