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Ken Takeuchi
Ken Takeuchi
Professor, Department of Electrical Engineering and Information Systems, The University of Tokyo
Verified email at co-design.t.u-tokyo.ac.jp - Homepage
Title
Cited by
Cited by
Year
Organic nonvolatile memory transistors for flexible sensor arrays
T Sekitani, T Yokota, U Zschieschang, H Klauk, S Bauer, K Takeuchi, ...
Science 326 (5959), 1516-1519, 2009
10872009
Semiconductor device and memory system
K Takeuchi, T Tanaka
US Patent 6,046,935, 2000
9982000
Semiconductor device and memory system
K Takeuchi, T Tanaka
US Patent 5,903,495, 1999
4741999
Non-volatile semiconductor memory and simultaneous writing of data
K Hosono, H Nakamura, K Takeuchi, K Imamiya
US Patent 8,472,268, 2013
439*2013
Nonvolatile semiconductor memory device
K Takeuchi, T Tanaka
US Patent 6,301,153, 2001
4082001
Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
K Takeuchi, T Tanaka, N Shibata
US Patent 6,373,746, 2002
3312002
Nonvolatile semiconductor memory device
K Takeuchi, K Sakui, T Tanaka, S Aritome
US Patent 6,046,940, 2000
236*2000
A multipage cell architecture for high-speed programming multilevel NAND flash memories
K Takeuchi, T Tanaka, T Tanzawa
IEEE Journal of Solid-State Circuits 33 (8), 1228-1238, 1998
2311998
Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
T Tanaka, H Nakamura, K Takeuchi, R Shirota, F Arai, S Fujimura
US Patent 6,134,140, 2000
1832000
A 56-nm CMOS 99- 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput
K Takeuchi, Y Kameda, S Fujimura, H Otake, K Hosono, H Shiga, ...
IEEE Journal of Solid-State Circuits 42 (1), 219-232, 2006
1802006
Circuit techniques for a 1.8-V-only NAND flash memory
T Tanzawa, T Tanaka, K Takeuchi, H Nakamura
IEEE Journal of Solid-State Circuits 37 (1), 84-89, 2002
1652002
Nonvolatile semiconductor memory device
K Takeuchi, T Tanaka
US Patent 5,920,507, 1999
1561999
A double-level-V/sub th/select gate array architecture for multilevel NAND flash memories
K Takeuchi, T Tanaka, H Nakamura
IEEE Journal of Solid-State Circuits 31 (4), 602-609, 1996
1451996
Non-volatile semiconductor memory
K Hosono, H Nakamura, K Takeuchi, K Imamiya
US Patent 6,937,510, 2005
1342005
Nonvolatile semiconductor memory device
T Tanaka, K Ohuchi, T Tanzawa, K Takeuchi
US Patent 6,545,909, 2003
1322003
Semiconductor memory device having variable number of selected cell pages and subcell arrays
K Takeuchi, T Tanaka
US Patent 5,986,933, 1999
1311999
Nonvolatile semiconductor memory device
K Takeuchi, T Tanaka
US Patent 5,781,478, 1998
1271998
Semiconductor memory device with test mode
T Ikehashi, K Takeuchi, T Himeno
US Patent 6,643,180, 2003
1142003
Novel co-design of NAND flash memory and NAND flash controller circuits for sub-30 nm low-power high-speed solid-state drives (SSD)
K Takeuchi
IEEE Journal of Solid-State Circuits 44 (4), 1227-1234, 2009
1132009
Nonvolatile semiconductor memory device having a data circuit for erasing and writing operations
K Takeuchi, T Tanaka
US Patent 6,055,188, 2000
1122000
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