Abhiram Gundimeda
Abhiram Gundimeda
PhD Student at the University of Cambridge
Email confirmado em cam.ac.uk
Citado por
Citado por
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ...
Applied Physics Letters 110 (10), 103507, 2017
ZnO/GaN heterojunction based self-powered photodetectors: Influence of interfacial states on UV sensing
M Mishra, A Gundimeda, T Garg, A Dash, S Das, G Gupta
Applied Surface Science 478, 1081-1089, 2019
Defect induced broadband visible to near-infrared luminescence in ZnAl2O4 nanocrystals
M Jain, A Gundimeda, S Kumar, G Gupta, SO Won, KH Chae, A Vij, ...
Applied Surface Science 480, 945-950, 2019
Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors
M Mishra, A Gundimeda, S Krishna, N Aggarwal, L Goswami, B Gahtori, ...
ACS omega 3 (2), 2304-2311, 2018
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
M Mishra, A Gundimeda, S Krishna, N Aggarwal, B Gahtori, N Dilawar, ...
Physical Chemistry Chemical Physics 19 (13), 8787-8801, 2017
Enhanced near-infrared luminescence in zinc aluminate bestowed by fuel-blended combustion approach
M Jain, A Gundimeda, A Kumar, S Kumar, G Gupta, SO Won, KH Chae, ...
Journal of Alloys and Compounds 797, 148-158, 2019
A strategy to design lanthanide doped dual-mode phosphor mediated spectral convertor for solar cell applications
P Kumar, S Singh, R Lahon, A Gundimeda, G Gupta, BK Gupta
Journal of Luminescence 196, 207-213, 2018
Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors
N Aggarwal, S Krishna, SK Jain, A Arora, L Goswami, A Sharma, ...
Journal of Alloys and Compounds 785, 883-890, 2019
Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy
C Ramesh, P Tyagi, G Abhiram, G Gupta, MS Kumar, SS Kushvaha
Journal of Crystal Growth 509, 23-28, 2019
Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector
S Krishna, N Aggarwal, A Gundimeda, A Sharma, S Husale, KK Maurya, ...
Materials Science in Semiconductor Processing 98, 59-64, 2019
Effect of metal contacts on a GaN/Sapphire-based MSM ultraviolet photodetector
SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ...
Journal of Electronic Materials 47 (10), 6086-6090, 2018
Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure
M Mishra, S Krishna, N Aggarwal, A Gundimeda, G Gupta
Journal of Alloys and Compounds 708, 385-391, 2017
Unraveling the cause of degradation in Cu(In,Ga)Se2 photovoltaics under potential induced degradation
Z Purohit, J Carolus, H Chaliyawala, SK Jain, A Gundimeda, G Gupta, ...
Nano Select, 2021
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
SA Church, M Quinn, K Cooley-Greene, B Ding, A Gundimeda, ...
Journal of Applied Physics 129 (17), 175702, 2021
Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer
N Aggarwal, S Krishna, L Goswami, SK Jain, A Pandey, A Gundimeda, ...
SN Applied Sciences 3 (3), 1-10, 2021
Magnetization and magnetoresistance of Ni/nanoporous-GaN composites
Y Calahorra, J Dawson, Y Grishchenko, S Ghosh, A Gundimeda, ...
arXiv preprint arXiv:2102.02904, 2021
Influence of wet chemical etching on electronic structure and optical response of polar (0001) GaN films
A Gundimeda, M Mishra, G Gupta
Materials Chemistry and Physics 230, 326-330, 2019
Influence of active layer thickness on electrical properties of P3HT/n-Si based hybrid heterostructure
A Gundimeda, M Mishra, R Ahmad, R Srivastava, UK Dwivedi, G Gupta
NISCAIR-CSIR, India, 2018
Non-polar gallium nitride ultraviolet photodetector on sapphire
Semiconductor Today: Compounds & Advanced Silicon, 2017
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