| Bias-induced threshold voltages shifts in thin-film organic transistors HL Gomes, P Stallinga, F Dinelli, M Murgia, F Biscarini, DM De Leeuw, ... Applied Physics Letters 84 (16), 3184-3186, 2004 | 218 | 2004 |
| Dynamics of threshold voltage shifts in organic and amorphous silicon field‐effect transistors SGJ Mathijssen, M Cölle, H Gomes, ECP Smits, B de Boer, I McCulloch, ... Advanced Materials 19 (19), 2785-2789, 2007 | 201 | 2007 |
| Gate-bias stress in amorphous oxide semiconductors thin-film transistors ME Lopes, HL Gomes, MCR Medeiros, P Barquinha, L Pereira, ... Applied Physics Letters 95 (6), 063502, 2009 | 200 | 2009 |
| Reproducible resistive switching in nonvolatile organic memories F Verbakel, SCJ Meskers, RAJ Janssen, HL Gomes, M Cölle, M Büchel, ... Applied Physics Letters 91 (19), 192103, 2007 | 124 | 2007 |
| Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly (3-methylthiophene) DM Taylor, HL Gomes, AE Underhill, S Edge, PI Clemenson Journal of Physics D: Applied Physics 24 (11), 2032, 1991 | 124 | 1991 |
| Electrical characterization of the rectifying contact between aluminium and electrodeposited poly (3-methylthiophene) DM Taylor, HL Gomes Journal of Physics D: Applied Physics 28 (12), 2554, 1995 | 103 | 1995 |
| Electronic transport in field-effect transistors of sexithiophene P Stallinga, HL Gomes, F Biscarini, M Murgia, DM De Leeuw Journal of applied physics 96 (9), 5277-5283, 2004 | 88 | 2004 |
| Electrical instabilities in organic semiconductors caused by trapped supercooled water HL Gomes, P Stallinga, M Cölle, DM De Leeuw, F Biscarini Applied Physics Letters 88 (8), 082101, 2006 | 78 | 2006 |
| Electrical characterization of organic based transistors: stability issues HL Gomes, P Stallinga, F Dinelli, M Murgia, F Biscarini, DM de Leeuw, ... Polymers for Advanced technologies 16 (2‐3), 227-231, 2005 | 60 | 2005 |
| Interface state mapping in a Schottky barrier of the organic semiconductor terrylene P Stallinga, HL Gomes, M Murgia, K Müllen organic Electronics 3 (1), 43-51, 2002 | 58 | 2002 |
| Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods HL Gomes, P Stallinga, H Rost, AB Holmes, MG Harrison, RH Friend Applied physics letters 74 (8), 1144-1146, 1999 | 55 | 1999 |
| Switching in polymeric resistance random-access memories (RRAMS) HL Gomes, ARV Benvenho, DM De Leeuw, M Cölle, P Stallinga, ... Organic Electronics 9 (1), 119-128, 2008 | 42 | 2008 |
| Modeling electrical characteristics of thin-film field-effect transistors: II: effects of traps and impurities P Stallinga, HL Gomes Synthetic metals 156 (21-24), 1316-1326, 2006 | 38 | 2006 |
| Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer–Neldel rule P Stallinga, HL Gomes Organic Electronics 7 (6), 592-599, 2006 | 37 | 2006 |
| Up-scaling of the manufacturing of all-inkjet-printed organic thin-film transistors: Device performance and manufacturing yield of transistor arrays E Sowade, KY Mitra, E Ramon, C Martinez-Domingo, F Villani, F Loffredo, ... Organic Electronics 30, 237-246, 2016 | 35 | 2016 |
| Organic and Printed Electronics: Fundamentals and Applications G Nisato, D Lupo, S Ganz CRC Press, 2016 | 33 | 2016 |
| Modeling electrical characteristics of thin-film field-effect transistors: I. Trap-free materials P Stallinga, HL Gomes Synthetic metals 156 (21-24), 1305-1315, 2006 | 33 | 2006 |
| Ultralow Power Microfuses for Write‐Once Read‐Many Organic Memory Elements BC de Brito, ECP Smits, PA van Hal, TCT Geuns, B de Boer, ... Advanced Materials 20 (19), 3750-3753, 2008 | 31 | 2008 |
| Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization P Stallinga, HL Gomes, H Rost, AB Holmes, MG Harrison, RH Friend Journal of Applied Physics 89 (3), 1713-1724, 2001 | 31 | 2001 |
| Electronic levels in MEH-PPV P Stallinga, HL Gomes, H Rost, AB Holmes, MG Harrison, RH Friend Synthetic metals 111, 535-537, 2000 | 31 | 2000 |
Osvaldo N. Oliveira Jr.Instituto de Fisica de Sao Carlos, USP, BrazilEmail confirmado em ifsc.usp.br