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Yoshiki Sakuma
Yoshiki Sakuma
Email confirmado em nims.go.jp
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Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors
K Takemoto, Y Nambu, T Miyazawa, Y Sakuma, T Yamamoto, S Yorozu, ...
Scientific reports 5 (1), 14383, 2015
2352015
Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering
T Kuroda, T Mano, N Ha, H Nakajima, H Kumano, B Urbaszek, M Jo, ...
Physical Review B 88 (4), 041306, 2013
1732013
Single-photon generation in the 1.55-µm optical-fiber band from an InAs/InP quantum dot
T Miyazawa, K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, ...
Japanese Journal of Applied Physics 44 (5L), L620, 2005
1722005
Atomic layer epitaxy of compound semiconductor
Y Sakuma, M Ozeki, N Ohtuka, K Kodama
US Patent 5,270,247, 1993
1721993
Novel InGaAs/GaAs quantum dot structures formed in tetrahedral‐shaped recesses on (111) B GaAs substrate using metalorganic vapor phase epitaxy
Y Sugiyama, Y Sakuma, S Muto, N Yokoyama
Applied physics letters 67 (2), 256-258, 1995
1301995
An optical horn structure for single-photon source using quantum dots at telecommunication wavelength
K Takemoto, M Takatsu, S Hirose, N Yokoyama, Y Sakuma, T Usuki, ...
Journal of applied physics 101 (8), 2007
1252007
Semiconductor device and method of fabricating the same
Y Sakuma, Y Sugiyama, S Muto
US Patent 6,011,271, 2000
1132000
Single-photon emission at 1.5 μm from an InAs/InP quantum dot with highly suppressed multi-photon emission probabilities
T Miyazawa, K Takemoto, Y Nambu, S Miki, T Yamashita, H Terai, ...
Applied Physics Letters 109 (13), 2016
1102016
Non-classical photon emission from a single InAs/InP quantum dot in the 1.3-µm optical-fiber band
K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, T Miyazawa, ...
Japanese journal of applied physics 43 (7B), L993, 2004
962004
Wafer-scale and deterministic patterned growth of monolayer MoS 2 via vapor–liquid–solid method
S Li, YC Lin, XY Liu, Z Hu, J Wu, H Nakajima, S Liu, T Okazaki, W Chen, ...
Nanoscale 11 (34), 16122-16129, 2019
932019
Tunable doping of rhenium and vanadium into transition metal dichalcogenides for two‐dimensional electronics
S Li, J Hong, B Gao, YC Lin, HE Lim, X Lu, J Wu, S Liu, Y Tateyama, ...
Advanced Science 8 (11), 2004438, 2021
922021
Method of making semiconductor device by selective epitaxial growth
T Mori, Y Sakuma
US Patent 5,438,018, 1995
901995
Transmission experiment of quantum keys over 50 km using high-performance quantum-dot single-photon source at 1.5 µm wavelength
K Takemoto, Y Nambu, T Miyazawa, K Wakui, S Hirose, T Usuki, ...
Applied Physics Express 3 (9), 092802, 2010
812010
Site-controlled photoluminescence at telecommunication wavelength from InAs∕ InP quantum dots
HZ Song, T Usuki, S Hirose, K Takemoto, Y Nakata, N Yokoyama, ...
Applied Physics Letters 86 (11), 2005
782005
Semiconductor device and method of fabricating the same
Y Sakuma, Y Sugiyama, S Muto
US Patent 6,235,547, 2001
782001
Observation of Exciton Transition in 1.3–1.55 µm Band from Single InAs/InP Quantum Dots in Mesa Structure
K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama
Japanese journal of applied physics 43 (3A), L349, 2004
702004
< 100> channel strained-SiGe p-MOSFET with enhanced hole mobility and lower parasitic resistance
M Shima, T Ueno, T Kumise, H Shido, Y Sakuma, S Nakamura
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
692002
Vanishing fine-structure splittings in telecommunication-wavelength quantum dots grown on (111) A surfaces by droplet epitaxy
X Liu, N Ha, H Nakajima, T Mano, T Kuroda, B Urbaszek, H Kumano, ...
Physical Review B 90 (8), 081301, 2014
552014
Self-limiting growth of hexagonal and triangular quantum dots on (111) A
M Jo, T Mano, M Abbarchi, T Kuroda, Y Sakuma, K Sakoda
Crystal growth & design 12 (3), 1411-1415, 2012
522012
Single photon emission from individual nitrogen pairs in GaP
M Ikezawa, Y Sakuma, Y Masumoto
Japanese Journal of Applied Physics 46 (10L), L871, 2007
522007
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