Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors K Takemoto, Y Nambu, T Miyazawa, Y Sakuma, T Yamamoto, S Yorozu, ... Scientific reports 5 (1), 14383, 2015 | 235 | 2015 |
Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering T Kuroda, T Mano, N Ha, H Nakajima, H Kumano, B Urbaszek, M Jo, ... Physical Review B 88 (4), 041306, 2013 | 173 | 2013 |
Single-photon generation in the 1.55-µm optical-fiber band from an InAs/InP quantum dot T Miyazawa, K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, ... Japanese Journal of Applied Physics 44 (5L), L620, 2005 | 172 | 2005 |
Atomic layer epitaxy of compound semiconductor Y Sakuma, M Ozeki, N Ohtuka, K Kodama US Patent 5,270,247, 1993 | 172 | 1993 |
Novel InGaAs/GaAs quantum dot structures formed in tetrahedral‐shaped recesses on (111) B GaAs substrate using metalorganic vapor phase epitaxy Y Sugiyama, Y Sakuma, S Muto, N Yokoyama Applied physics letters 67 (2), 256-258, 1995 | 130 | 1995 |
An optical horn structure for single-photon source using quantum dots at telecommunication wavelength K Takemoto, M Takatsu, S Hirose, N Yokoyama, Y Sakuma, T Usuki, ... Journal of applied physics 101 (8), 2007 | 125 | 2007 |
Semiconductor device and method of fabricating the same Y Sakuma, Y Sugiyama, S Muto US Patent 6,011,271, 2000 | 113 | 2000 |
Single-photon emission at 1.5 μm from an InAs/InP quantum dot with highly suppressed multi-photon emission probabilities T Miyazawa, K Takemoto, Y Nambu, S Miki, T Yamashita, H Terai, ... Applied Physics Letters 109 (13), 2016 | 110 | 2016 |
Non-classical photon emission from a single InAs/InP quantum dot in the 1.3-µm optical-fiber band K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama, T Miyazawa, ... Japanese journal of applied physics 43 (7B), L993, 2004 | 96 | 2004 |
Wafer-scale and deterministic patterned growth of monolayer MoS 2 via vapor–liquid–solid method S Li, YC Lin, XY Liu, Z Hu, J Wu, H Nakajima, S Liu, T Okazaki, W Chen, ... Nanoscale 11 (34), 16122-16129, 2019 | 93 | 2019 |
Tunable doping of rhenium and vanadium into transition metal dichalcogenides for two‐dimensional electronics S Li, J Hong, B Gao, YC Lin, HE Lim, X Lu, J Wu, S Liu, Y Tateyama, ... Advanced Science 8 (11), 2004438, 2021 | 92 | 2021 |
Method of making semiconductor device by selective epitaxial growth T Mori, Y Sakuma US Patent 5,438,018, 1995 | 90 | 1995 |
Transmission experiment of quantum keys over 50 km using high-performance quantum-dot single-photon source at 1.5 µm wavelength K Takemoto, Y Nambu, T Miyazawa, K Wakui, S Hirose, T Usuki, ... Applied Physics Express 3 (9), 092802, 2010 | 81 | 2010 |
Site-controlled photoluminescence at telecommunication wavelength from InAs∕ InP quantum dots HZ Song, T Usuki, S Hirose, K Takemoto, Y Nakata, N Yokoyama, ... Applied Physics Letters 86 (11), 2005 | 78 | 2005 |
Semiconductor device and method of fabricating the same Y Sakuma, Y Sugiyama, S Muto US Patent 6,235,547, 2001 | 78 | 2001 |
Observation of Exciton Transition in 1.3–1.55 µm Band from Single InAs/InP Quantum Dots in Mesa Structure K Takemoto, Y Sakuma, S Hirose, T Usuki, N Yokoyama Japanese journal of applied physics 43 (3A), L349, 2004 | 70 | 2004 |
< 100> channel strained-SiGe p-MOSFET with enhanced hole mobility and lower parasitic resistance M Shima, T Ueno, T Kumise, H Shido, Y Sakuma, S Nakamura 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 69 | 2002 |
Vanishing fine-structure splittings in telecommunication-wavelength quantum dots grown on (111) A surfaces by droplet epitaxy X Liu, N Ha, H Nakajima, T Mano, T Kuroda, B Urbaszek, H Kumano, ... Physical Review B 90 (8), 081301, 2014 | 55 | 2014 |
Self-limiting growth of hexagonal and triangular quantum dots on (111) A M Jo, T Mano, M Abbarchi, T Kuroda, Y Sakuma, K Sakoda Crystal growth & design 12 (3), 1411-1415, 2012 | 52 | 2012 |
Single photon emission from individual nitrogen pairs in GaP M Ikezawa, Y Sakuma, Y Masumoto Japanese Journal of Applied Physics 46 (10L), L871, 2007 | 52 | 2007 |