Manufacturing method of semiconductor device T Nabatame
US Patent App. 12/116,940, 2009
445 2009 Rutile-type TiO2 thin film for high-k gate insulator M Kadoshima, M Hiratani, Y Shimamoto, K Torii, H Miki, S Kimura, ...
Thin Solid Films 424 (2), 224-228, 2003
306 2003 Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al2 O3 –Al Trilayers TD Dao, K Chen, S Ishii, A Ohi, T Nabatame, M Kitajima, T Nagao
Acs Photonics 2 (7), 964-970, 2015
183 2015 Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕ SiO2 interface K Iwamoto, Y Kamimuta, A Ogawa, Y Watanabe, S Migita, W Mizubayashi, ...
Applied Physics Letters 92 (13), 2008
179 2008 Coordination and interface analysis of atomic-layer-deposition K Kimoto, Y Matsui, T Nabatame, T Yasuda, T Mizoguchi, I Tanaka, ...
Applied physics letters 83 (21), 4306-4308, 2003
149 2003 Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications S Aikawa, T Nabatame, K Tsukagoshi
Applied Physics Letters 103 (17), 2013
134 2013 Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ...
Applied Physics Letters 104 (10), 2014
117 2014 Hole array perfect absorbers for spectrally selective midwavelength infrared pyroelectric detectors TD Dao, S Ishii, T Yokoyama, T Sawada, RP Sugavaneshwar, K Chen, ...
Acs Photonics 3 (7), 1271-1278, 2016
112 2016 Comparative studies on oxygen diffusion coefficients for amorphous and γ-Al2O3 films using 18O isotope T Nabatame, T Yasuda, M Nishizawa, M Ikeda, T Horikawa, A Toriumi
Japanese journal of applied physics 42 (12R), 7205, 2003
106 2003 Transport superconducting properties of grain boundaries in Tl1 Ba2 Ca2 Cu3 Ox T Nabatame, S Koike, OB Hyun, I Hirabayashi, H Suhara, K Nakamura
Applied physics letters 65 (6), 776-778, 1994
103 1994 Low-temperature processable amorphous In-WO thin-film transistors with high mobility and stability T Kizu, S Aikawa, N Mitoma, M Shimizu, X Gao, MF Lin, T Nabatame, ...
Applied Physics Letters 104 (15), 2014
98 2014 Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: interfacial Si oxidation and silicidation N Miyata, M Ichikawa, T Nabatame, T Horikawa, A Toriumi
Japanese journal of applied physics 42 (2B), L138, 2003
89 2003 Femtosecond spectroscopic studies of the ultrafast relaxation process in the charge-transfer state of insulating cuprates K Matsuda, I Hirabayashi, K Kawamoto, T Nabatame, T Tokizaki, ...
Physical review B 50 (6), 4097, 1994
84 1994 Comprehensive Study of VFB Shift in High-k CMOS - Dipole Formation, Fermi-level Pinning and Oxygen Vacancy Effect Y Kamimuta, K Iwamoto, Y Nunoshige, A Hirano, W Mizubayashi, ...
2007 IEEE International Electron Devices Meeting, 341-344, 2007
82 2007 Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura
Applied Physics Express 10 (8), 081501, 2017
79 2017 Fabrication of highly metallic TiN films by pulsed laser deposition method for plasmonic applications RP Sugavaneshwar, S Ishii, TD Dao, A Ohi, T Nabatame, T Nagao
ACS Photonics 5 (3), 814-819, 2017
76 2017 Metamaterial-enhanced vibrational absorption spectroscopy for the detection of protein molecules TS Bui, TD Dao, LH Dang, LD Vu, A Ohi, T Nabatame, YP Lee, T Nagao, ...
Scientific Reports 6 (1), 32123, 2016
76 2016 Growth mechanism of Ru films prepared by chemical vapor deposition using bis (ethylcyclopentadienyl) ruthenium precursor Y Matsui, M Hiratani, T Nabatame, Y Shimamoto, S Kimura
Electrochemical and Solid-State Letters 4 (2), C9, 2001
76 2001 Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor S Aikawa, P Darmawan, K Yanagisawa, T Nabatame, Y Abe, ...
Applied Physics Letters 102 (10), 2013
74 2013 Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura
Microelectronic Engineering 215, 111013, 2019
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