javier martin-martinez
javier martin-martinez
Email confirmado em uab.es
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Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
Emerging yield and reliability challenges in nanometer CMOS technologies
G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ...
Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008
NBTI from the perspective of defect states with widely distributed time scales
B Kaczer, T Grasser, J Martin-Martinez, E Simoen, M Aoulaiche, ...
2009 IEEE International Reliability Physics Symposium, 55-60, 2009
Probabilistic defect occupancy model for NBTI
J Martin-Martinez, B Kaczer, M Toledano-Luque, R Rodriguez, M Nafria, ...
2011 International Reliability Physics Symposium, XT. 4.1-XT. 4.6, 2011
New weighted time lag method for the analysis of random telegraph signals
J Martin-Martinez, J Diaz, R Rodriguez, M Nafria, X Aymerich
IEEE Electron Device Letters 35 (4), 479-481, 2014
Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits
R Fernández, J Martin-Martinez, R Rodriguez, M Nafría, XH Aymerich
IEEE Transactions on Electron Devices 55 (4), 997-1004, 2008
Time-dependent variability related to BTI effects in MOSFETs: Impact on CMOS differential amplifiers
J Martin-Martinez, R Rodriguez, M Nafria, X Aymerich
IEEE Transactions on Device and Materials Reliability 9 (2), 305-310, 2009
Reliability in super-and near-threshold computing: A unified model of RTN, BTI, and PV
VM Van Santen, J Martin-Martinez, H Amrouch, MM Nafria, J Henkel
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (1), 293-306, 2017
Designing guardbands for instantaneous aging effects
VM van Santen, H Amrouch, J Martin-Martinez, M Nafria, J Henkel
2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC), 1-6, 2016
Reliability simulation for analog ICs: Goals, solutions, and challenges
A Toro-Frias, P Martin-Lloret, J Martín-Martínez, R Castro-López, E Roca, ...
Integration 55, 341-348, 2016
Connecting the physical and application level towards grasping aging effects
H Amrouch, J Martin-Martinez, VM van Santen, M Moras, R Rodriguez, ...
2015 IEEE International Reliability Physics Symposium, 3D. 1.1-3D. 1.8, 2015
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ...
Microelectronic Engineering 147, 176-179, 2015
Time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators
M Nafria, R Rodriguez, M Porti, J Martin-Martinez, M Lanza, X Aymerich
2011 International Electron Devices Meeting, 6.3. 1-6.3. 4, 2011
Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ...
Microelectronic Engineering 147, 335-338, 2015
Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters
J Martin-Martinez, S Gerardin, E Amat, R Rodriguez, M Nafria, X Aymerich, ...
IEEE transactions on electron devices 56 (9), 2155-2159, 2009
Unified characterization of RTN and BTI for circuit performance and variability simulation
N Ayala, J Martín-Martínez, R Rodríguez, M Nafria, X Aymerich
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
M Maestro, J Diaz, A Crespo-Yepes, MB Gonzalez, J Martin-Martinez, ...
Solid-State Electronics 115, 140-145, 2016
Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High-Gate Stacks
A Crespo-Yepes, J Martin-Martinez, A Rothschild, R Rodriguez, M Nafria, ...
IEEE electron device letters 31 (6), 543-545, 2010
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses
A Crespo-Yepes, J Martín-Martínez, R Rodríguez, M Nafria, X Aymerich
Microelectronics Reliability 49 (9-11), 1024-1028, 2009
Tuning the conductivity of resistive switching devices for electronic synapses
M Pedro, J Martin-Martinez, MB Gonzalez, R Rodriguez, F Campabadal, ...
Microelectronic Engineering 178, 89-92, 2017
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