| Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach A Aziz, O Bonnaud, H Lhermite, F Raoult IEEE transactions on Electron Devices 41 (2), 204-211, 1994 | 96 | 1994 |
| Laser crystallization of silicon for high-performance thin-film transistors R Dassow, JR Köhler, Y Helen, K Mourgues, O Bonnaud, ... Semiconductor science and technology 15 (10), L31, 2000 | 88 | 2000 |
| High mobility thin film transistors by Nd: YVO4-laser crystallization Y Helen, R Dassow, M Nerding, K Mourgues, F Raoult, JR Köhler, ... Thin Solid Films 383 (1-2), 143-146, 2001 | 60 | 2001 |
| Microwave planar antenna with RF‐sputtered indium tin oxide films N Outaleb, J Pinel, M Drissi, O Bonnaud Microwave and Optical Technology Letters 24 (1), 3-7, 2000 | 49 | 2000 |
| Nd: YVO4 laser crystallization for thin film transistors with a high mobility R Dassow, JR Köhler, M Nerding, HP Strunk, Y Helen, K Mourgues, ... MRS Online Proceedings Library (OPL) 621, Q9. 3.1, 2000 | 49 | 2000 |
| Analysis of SiO2 thin films deposited by PECVD using an oxygen-TEOS-argon mixture CE Viana, ANR da Silva, NI Morimoto, O Bonnaud Brazilian Journal of Physics 31, 299-303, 2001 | 44 | 2001 |
| Analysis of the activation energy of the subthreshold current in laser-and solid-phase-crystallized polycrystalline silicon thin-film transistors L Pichon, A Mercha, R Carin, O Bonnaud, T Mohammed-Brahim, Y Helen, ... Applied Physics Letters 77 (4), 576-578, 2000 | 44 | 2000 |
| GIP-CNFM: a French education network moving from microelectronics to nanotechnologies CNFM: National coordination for education in microelectronics and nanotechnologies O Bonnaud, P Gentil, A Bsiesy, S Retailleau, E Dufour-Gergam, JM Dorkel 2011 IEEE Global Engineering Education Conference (EDUCON), 122-127, 2011 | 40 | 2011 |
| Performance of thin film transistors on unhydrogenated in-situ doped polysilicon films obtained by solid phase crystallization K Mourgues, F Raoult, L Pichon, T Mohammed-Brahim, D Briand, ... MRS Online Proceedings Library (OPL) 471, 155, 1997 | 39 | 1997 |
| Realization of polycrystalline silicon magnetic sensors F Le Bihan, E Carvou, B Fortin, R Rogel, AC Salaün, O Bonnaud Sensors and Actuators A: Physical 88 (2), 133-138, 2001 | 36 | 2001 |
| New approach for sensors and connecting objects involving microelectronic multidisciplinarity for a wide spectrum of applications O Bonnaud International Journal of Plasma Environmental Science & Technology 10 (2 …, 2016 | 35 | 2016 |
| Single shot excimer laser crystallization and LPCVD silicon TFTs Y Helen, K Mourgues, F Raoult, T Mohammed-Brahim, O Bonnaud, ... Thin Solid Films 337 (1-2), 133-136, 1999 | 32 | 1999 |
| Air-gap polycrystalline silicon thin-film transistors for fully integrated sensors H Mahfoz-Kotb, AC Salaun, T Mohammed-Brahim, O Bonnaud IEEE Electron Device Letters 24 (3), 165-167, 2003 | 31 | 2003 |
| Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture CE Viana, NI Morimoto, O Bonnaud Microelectronics Reliability 40 (4-5), 613-616, 2000 | 29 | 2000 |
| Study of mechanical stability of suspended bridge devices used as pH sensors F Bendriaa, F Le Bihan, AC Salaün, T Mohammed-Brahim, O Bonnaud Journal of non-crystalline solids 352 (9-20), 1246-1249, 2006 | 28 | 2006 |
| Low temperature (≦ 600° C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays L Pichon, F Raoult, K Mourgues, K Kis-Sion, T Mohammed-Brahim, ... Thin Solid Films 296 (1-2), 133-136, 1997 | 28 | 1997 |
| P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology P Zhang, E Jacques, R Rogel, O Bonnaud Solid-state electronics 86, 1-5, 2013 | 27 | 2013 |
| The French microelectronics training network supported by industry and education ministries O Bonnaud, G Rey Proceedings of International Conference on Microelectronic Systems Education …, 1997 | 27 | 1997 |
| Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization L Pichon, K Mourgues, F Raoult, T Mohammed-Brahim, K Kis-Sion, ... Semiconductor science and technology 16 (11), 918, 2001 | 26 | 2001 |
| From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties T Mohammed-Brahim, K Kis-Sion, D Briand, M Sarret, O Bonnaud, ... Journal of non-crystalline solids 227, 962-966, 1998 | 26 | 1998 |
