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Areej Aljarb
Areej Aljarb
Unknown affiliation
Verified email at kaust.edu.sa
Title
Cited by
Cited by
Year
Epitaxial growth of two-dimensional layered transition-metal dichalcogenides: growth mechanism, controllability, and scalability
H Li, Y Li, A Aljarb, Y Shi, LJ Li
Chemical reviews 118 (13), 6134-6150, 2017
3362017
Mixed-dimensional MXene-hydrogel heterostructures for electronic skin sensors with ultrabroad working range
Y Cai, J Shen, CW Yang, Y Wan, HL Tang, AA Aljarb, C Chen, JH Fu, ...
Science advances 6 (48), eabb5367, 2020
1992020
Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates
S Park, N Mutz, T Schultz, S Blumstengel, A Han, A Aljarb, LJ Li, ...
2D Materials 5 (2), 025003, 2018
1802018
The development of integrated circuits based on two-dimensional materials
K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung, X Zhang, HN Alshareef, ...
Nature Electronics 4 (11), 775-785, 2021
1602021
Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides
A Aljarb, Z Cao, HL Tang, JK Huang, M Li, W Hu, L Cavallo, LJ Li
ACS nano 11 (9), 9215-9222, 2017
1262017
Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
A Aljarb, JH Fu, CC Hsu, CP Chuu, Y Wan, M Hakami, DR Naphade, ...
Nature Materials 19 (12), 1300-1306, 2020
1232020
Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants
S Park, T Schultz, X Xu, B Wegner, A Aljarb, A Han, LJ Li, VC Tung, ...
Communications Physics 2 (1), 109, 2019
592019
Metal‐guided selective growth of 2D materials: demonstration of a bottom‐up CMOS inverter
MH Chiu, HL Tang, CC Tseng, Y Han, A Aljarb, JK Huang, Y Wan, JH Fu, ...
Advanced Materials 31 (18), 1900861, 2019
452019
Low-defect-density WS2 by hydroxide vapor phase deposition
Y Wan, E Li, Z Yu, JK Huang, MY Li, AS Chou, YT Lee, CJ Lee, HC Hsu, ...
Nature Communications 13 (1), 4149, 2022
422022
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
KH Kim, S Oh, MMA Fiagbenu, J Zheng, P Musavigharavi, P Kumar, ...
Nature nanotechnology 18 (9), 1044-1050, 2023
392023
Mo3+ hydride as the common origin of H2 evolution and selective NADH regeneration in molybdenum sulfide electrocatalysts
JA Bau, AH Emwas, P Nikolaienko, AA Aljarb, V Tung, M Rueping
Nature Catalysis 5 (5), 397-404, 2022
382022
The Schottky–Mott rule expanded for two-dimensional semiconductors: Influence of substrate dielectric screening
S Park, T Schultz, D Shin, N Mutz, A Aljarb, HS Kang, CH Lee, LJ Li, X Xu, ...
ACS nano 15 (9), 14794-14803, 2021
332021
Type‐I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement
S Park, N Mutz, SA Kovalenko, T Schultz, D Shin, A Aljarb, LJ Li, V Tung, ...
Advanced Science 8 (12), 2100215, 2021
272021
Growth of 2H stacked WSe 2 bilayers on sapphire
A Han, A Aljarb, S Liu, P Li, C Ma, F Xue, S Lopatin, CW Yang, JK Huang, ...
Nanoscale Horizons 4 (6), 1434-1442, 2019
272019
Two-dimensional plasmonic polarons in -doped monolayer
F Caruso, P Amsalem, J Ma, A Aljarb, T Schultz, M Zacharias, V Tung, ...
Physical Review B 103 (20), 205152, 2021
202021
Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures
S Park, H Wang, T Schultz, D Shin, R Ovsyannikov, M Zacharias, ...
Advanced Materials 33 (29), 2008677, 2021
192021
Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion
JT Ly, EK Burnett, S Thomas, A Aljarb, Y Liu, S Park, S Rosa, Y Yi, H Lee, ...
ACS applied materials & interfaces 10 (46), 40070-40077, 2018
172018
Electronic band dispersion determination in azimuthally disordered transition-metal dichalcogenide monolayers
S Park, T Schultz, A Han, A Aljarb, X Xu, P Beyer, A Opitz, R Ovsyannikov, ...
Communications Physics 2 (1), 68, 2019
162019
Aberration-corrected STEM imaging of 2D materials: Artifacts and practical applications of threefold astigmatism
S Lopatin, A Aljarb, V Roddatis, T Meyer, Y Wan, JH Fu, M Hedhili, Y Han, ...
Science Advances 6 (37), eabb8431, 2020
152020
Strain-directed layer-by-layer epitaxy toward van der Waals homo-and heterostructures
Y Wan, JK Huang, CP Chuu, WT Hsu, CJ Lee, A Aljarb, CW Huang, ...
ACS Materials Letters 3 (4), 442-453, 2021
132021
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