| Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy J Steinshnider, M Weimer, R Kaspi, GW Turner Physical Review Letters 85 (14), 2953, 2000 | 114 | 2000 |
| Interpolating semiconductor alloy parameters: Application to quaternary III–V band gaps GP Donati, R Kaspi, KJ Malloy Journal of Applied Physics 94 (9), 5814-5819, 2003 | 105 | 2003 |
| Sb-surface segregation and the control of compositional abruptness at the GaAsSbGaAs interface R Kaspi, KR Evans Journal of Crystal Growth 175, 838-843, 1997 | 101 | 1997 |
| Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular‐beam epitaxy R Kaspi, KR Evans Applied physics letters 67 (6), 819-821, 1995 | 99 | 1995 |
| Citric Acid Etching of GaAs1− x Sb x, Al0. 5Ga0. 5Sb, and InAs for Heterostructure Device Fabrication GC DeSalvo, R Kaspi, CA Bozada Journal of The Electrochemical Society 141 (12), 3526, 1994 | 93 | 1994 |
| Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices AP Ongstad, R Kaspi, CE Moeller, ML Tilton, DM Gianardi, JR Chavez, ... Journal of Applied Physics 89 (4), 2185-2188, 2001 | 76 | 2001 |
| Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs (001) substrates W Qian, M Skowronski, R Kaspi, M De Graef, VP Dravid Journal of applied physics 81 (11), 7268-7272, 1997 | 73 | 1997 |
| Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature R Kaspi Journal of crystal growth 201, 864-867, 1999 | 71 | 1999 |
| As-soak control of the InAs-on-GaSb interface R Kaspi, J Steinshnider, M Weimer, C Moeller, A Ongstad Journal of crystal growth 225 (2-4), 544-549, 2001 | 69 | 2001 |
| High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement R Kaspi, A Ongstad, GC Dente, J Chavez, ML Tilton, D Gianardi Applied physics letters 81 (3), 406-408, 2002 | 66 | 2002 |
| Dislocation density reduction in GaSb films grown on GaAs substrates by molecular beam epitaxy W Qian, M Skowronski, R Kaspi Journal of the Electrochemical Society 144 (4), 1430, 1997 | 66 | 1997 |
| 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy C Mourad, D Gianardi, KJ Malloy, R Kaspi Journal of Applied Physics 88 (10), 5543-5546, 2000 | 61 | 2000 |
| Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices R Kaspi, C Moeller, A Ongstad, ML Tilton, D Gianardi, G Dente, ... Applied Physics Letters 76 (4), 409-411, 2000 | 59 | 2000 |
| Surface chemistry evolution during molecular beam epitaxy growth of InGaAs KR Evans, R Kaspi, JE Ehret, M Skowronski, CR Jones Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 59 | 1995 |
| Digital alloy growth in mixed As/Sb heterostructures R Kaspi, GP Donati Journal of crystal growth 251 (1-4), 515-520, 2003 | 51 | 2003 |
| Multiple wavelength broad bandwidth optically pumped semiconductor laser R Kaspi US Patent 6,553,045, 2003 | 46 | 2003 |
| High performance optically pumped antimonide lasers operating in the 2.4–9.3 μm wavelength range R Kaspi, AP Ongstad, GC Dente, JR Chavez, ML Tilton, DM Gianardi Applied physics letters 88 (4), 2006 | 40 | 2006 |
| In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design SA Feld, JP Loehr, RE Sherriff, J Wiemeri, R Kaspi IEEE Photonics Technology Letters 10 (2), 197-199, 1998 | 34 | 1998 |
| The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN JR Jenny, JE Van Nostrand, R Kaspi Applied physics letters 72 (1), 85-87, 1998 | 33 | 1998 |
| Desorption mass spectrometric control of composition during MBE growth of AlGaAs KR Evans, R Kaspi, CR Jones, RE Sherriff, V Jogai, DC Reynolds Journal of crystal growth 127 (1-4), 523-527, 1993 | 32 | 1993 |
