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Sunbin Deng
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Year
Overcoming the limitations of sputtered nickel oxide for high‐efficiency and large‐area perovskite solar cells
G Li, Y Jiang, S Deng, A Tam, P Xu, M Wong, HS Kwok
Advanced Science 4 (12), 1700463, 2017
2012017
Multifunctional optoelectronic device based on an asymmetric active layer structure
B Ren, G Yuen, S Deng, L Jiang, D Zhou, L Gu, P Xu, M Zhang, Z Fan, ...
Advanced Functional Materials 29 (17), 1807894, 2019
422019
Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017
402017
Voltage‐dependent multicolor electroluminescent device based on halide perovskite and chalcogenide quantum‐dots emitters
J Zhang, B Ren, S Deng, J Huang, L Jiang, D Zhou, X Zhang, M Zhang, ...
Advanced Functional Materials 30 (4), 1907074, 2020
362020
Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering
W Zhong, S Deng, K Wang, G Li, G Li, R Chen, HS Kwok
Nanomaterials 8 (8), 590, 2018
342018
High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
Applied Physics Letters 109 (18), 2016
342016
Complex oxides for brain‐inspired computing: A review
TJ Park, S Deng, S Manna, ANMN Islam, H Yu, Y Yuan, DD Fong, ...
Advanced Materials 35 (37), 2203352, 2023
252023
Characteristics of elevated-metal metal-oxide thin-film transistors based on indium-tin-zinc oxide
Z Xia, L Lu, J Li, Z Feng, S Deng, S Wang, HS Kwok, M Wong
IEEE Electron Device Letters 38 (7), 894-897, 2017
222017
Introducing ion migration and light-induced secondary ion redistribution for phase-stable and high-efficiency inorganic perovskite solar cells
J Huang, H Yan, D Zhou, J Zhang, S Deng, P Xu, R Chen, HS Kwok, G Li
ACS Applied Materials & Interfaces 12 (36), 40364-40371, 2020
212020
Low leakage current vertical thin-film transistors with InSnO-stabilized ZnO channel
X Yin, S Deng, G Li, W Zhong, R Chen, G Li, FSY Yeung, M Wong, ...
IEEE Electron Device Letters 41 (2), 248-251, 2019
192019
Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors
Y Liu, S Deng, R Chen, B Li, YF En, Y Chen
IEEE Electron Device Letters 39 (2), 200-203, 2017
182017
Evaluation of positive-bias-stress-induced degradation in InSnZnO thin-film transistors by low frequency noise measurement
Z Jiang, M Zhang, S Deng, Y Yang, M Wong, HS Kwok
IEEE Electron Device Letters 43 (6), 886-889, 2022
152022
Threshold voltage adjustment in hybrid-microstructural ITO-stabilized ZnO TFTs via gate electrode engineering
S Deng, R Chen, G Li, M Zhang, Z Xia, M Wong, HS Kwok
IEEE Electron Device Letters 39 (7), 975-978, 2018
152018
Selective area doping for Mott neuromorphic electronics
S Deng, H Yu, TJ Park, ANMN Islam, S Manna, A Pofelski, Q Wang, Y Zhu, ...
Science Advances 9 (11), eade4838, 2023
132023
A high‐performance photodetector based on 1D perovskite radial heterostructure
J Zhang, W Zhong, Y Liu, J Huang, S Deng, M Zhang, HS Kwok, G Li
Advanced Optical Materials 9 (24), 2101504, 2021
122021
Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors
W Zhong, L Kang, S Deng, L Lu, R Yao, L Lan, HS Kwok, R Chen
IEEE Transactions on Electron Devices 68 (10), 4956-4961, 2021
122021
Fabrication of high-performance bridged-grain polycrystalline silicon TFTs by laser interference lithography
S Deng, R Chen, W Zhou, JYL Ho, M Wong, HS Kwok
IEEE Transactions on Electron Devices 63 (3), 1085-1090, 2016
122016
Three-dimensional ZnO porous films for self-cleaning ultraviolet photodetectors
Y Cao, S Deng, Q Hu, Q Zhong, QP Luo, L Yuan, J Zhou
RSC advances 5 (104), 85969-85973, 2015
122015
Low-power design for unipolar ITO-stabilized ZnO TFT RFID code generator using differential logic decoder
Y Qin, G Li, Y Xu, R Chen, S Deng, W Zhong, Z Wu, B Li, G Li, FSY Yeung, ...
IEEE Transactions on Electron Devices 66 (11), 4768-4773, 2019
112019
High-performance amorphous zinc–tin–oxide thin-film transistors with low tin concentration
S Weng, R Chen, W Zhong, S Deng, G Li, FSY Yeung, L Lan, Z Chen, ...
IEEE Journal of the Electron Devices Society 7, 632-637, 2019
112019
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