Gino Giusi
Title
Cited by
Cited by
Year
Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks
P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
1232009
Impact strain engineering on gate stack quality and reliability
C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
1022008
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE Transactions on Electron Devices 53 (4), 823-828, 2006
652006
Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies
P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
572011
Ultraflexible tactile piezoelectric sensor based on low-temperature polycrystalline silicon thin-film transistor technology
F Maita, L Maiolo, A Minotti, A Pecora, D Ricci, G Metta, G Scandurra, ...
IEEE Sensors Journal 15 (7), 3819-3826, 2015
422015
Dedicated instrumentation for high sensitivity, low frequency noise measurement systems
C Ciofi, G Giusi, G Scandurra, B Neri
Fluctuation and Noise Letters 4 (02), L385-L402, 2004
362004
Low-frequency (1/f) noise behavior of locally stressed HfO/sub 2//TiN gate-stack pMOSFETs
G Giusi, E Simoen, G Eneman, P Verheyen, F Crupi, K De Meyer, ...
IEEE electron device letters 27 (6), 508-510, 2006
342006
Junction engineering of 1T-DRAMs
G Giusi, G Iannaccone
IEEE electron device letters 34 (3), 408-410, 2013
312013
Bipolar mode operation and scalability of double-gate capacitorless 1T-DRAM cells
G Giusi, MA Alam, F Crupi, S Pierro
IEEE transactions on electron devices 57 (8), 1743-1750, 2010
312010
Analytical model for the noise in the tunneling current through metal-oxide-semiconductor structures
F Crupi, G Giusi, G Iannaccone, P Magnone, C Pace, E Simoen, C Claeys
Journal of Applied Physics 106 (7), 073710, 2009
312009
Performance and reliability of strained-silicon nMOSFETs with SiN cap layer
G Giusi, F Crupi, E Simoen, G Eneman, M Jurczak
IEEE transactions on electron devices 54 (1), 78-82, 2006
252006
Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs
D Maji, F Crupi, E Amat, E Simoen, B De Jaeger, DP Brunco, CR Manoj, ...
IEEE transactions on electron devices 56 (5), 1063-1069, 2009
242009
ESTIMATION ERRORS IN 1/fγ NOISE SPECTRA WHEN EMPLOYING DFT SPECTRUM ANALYZERS
G Giusi, G Scandurra, C Ciofi
Fluctuation and Noise Letters 12 (01), 1350007, 2013
222013
Multichannel amplifier topologies for high-sensitivity and reduced measurement time in voltage noise measurements
G Scandurra, G Giusi, C Ciofi
IEEE Transactions on Instrumentation and Measurement 62 (5), 1145-1153, 2013
212013
On the dc and noise properties of the gate current in epitaxial Ge -channel metal oxide semiconductor field effect transistors with gate stack
D Maji, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, VR Rao
Applied Physics Letters 92 (16), 163508, 2008
202008
Amperometric biosensor and front-end electronics for remote glucose monitoring by crosslinked PEDOT-glucose oxidase
Y Aleeva, G Maira, M Scopelliti, V Vinciguerra, G Scandurra, G Cannata, ...
IEEE Sensors Journal 18 (12), 4869-4878, 2018
192018
Ultra‐low‐noise large‐bandwidth transimpedance amplifier
G Giusi, G Cannatą, G Scandurra, C Ciofi
International journal of circuit theory and applications 43 (10), 1455-1473, 2015
192015
Automatic measurement system for the DC and low-f noise characterization of FETs at wafer level
G Giusi, O Giordano, G Scandurra, C Ciofi, M Rapisarda, S Calvi
2015 IEEE International Instrumentation and Measurement Technology …, 2015
192015
Programmable, very low noise current source
G Scandurra, G Cannatą, G Giusi, C Ciofi
Review of Scientific Instruments 85 (12), 125109, 2014
192014
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
S Chabukswar, D Maji, CR Manoj, KG Anil, VR Rao, F Crupi, P Magnone, ...
Microelectronic Engineering 87 (10), 1963-1967, 2010
192010
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