Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth AM Munshi, DL Dheeraj, VT Fauske, DC Kim, ATJ van Helvoort, ... Nano letters 12 (9), 4570-4576, 2012 | 241 | 2012 |
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh, JF Reinertsen, ... Nano letters 14 (2), 960-966, 2014 | 175 | 2014 |
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires TB Hoang, AF Moses, HL Zhou, DL Dheeraj, BO Fimland, H Weman Applied physics letters 94 (13), 2009 | 161 | 2009 |
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts DL Dheeraj, G Patriarche, H Zhou, TB Hoang, AF Moses, S Grønsberg, ... Nano letters 8 (12), 4459-4463, 2008 | 148 | 2008 |
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress G Signorello, E Lörtscher, PA Khomyakov, S Karg, DL Dheeraj, ... Nature communications 5 (1), 3655, 2014 | 145 | 2014 |
A story told by a single nanowire: optical properties of wurtzite GaAs L Ahtapodov, J Todorovic, P Olk, T Mjåland, P Slåttnes, DL Dheeraj, ... Nano letters 12 (12), 6090-6095, 2012 | 127 | 2012 |
Role of nonlinear effects in nanowire growth and crystal phase VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ... Physical Review B 80 (20), 205305, 2009 | 125 | 2009 |
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111) L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand Nanotechnology 19 (15), 155704, 2008 | 111 | 2008 |
Zinc blende GaAsSb nanowires grown by molecular beam epitaxy DL Dheeraj, G Patriarche, L Largeau, HL Zhou, ATJ Van Helvoort, F Glas, ... Nanotechnology 19 (27), 275605, 2008 | 74 | 2008 |
Rectifying single GaAsSb nanowire devices based on self-induced compositional gradients J Huh, H Yun, DC Kim, AM Munshi, DL Dheeraj, H Kauko, ... Nano Letters 15 (6), 3709-3715, 2015 | 73 | 2015 |
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si (111) AM Munshi, DL Dheeraj, J Todorovic, ATJ van Helvoort, H Weman, ... Journal of Crystal Growth 372, 163-169, 2013 | 72 | 2013 |
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control T Ba Hoang, AF Moses, L Ahtapodov, H Zhou, DL Dheeraj, ... Nano letters 10 (8), 2927-2933, 2010 | 72 | 2010 |
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ... Nano letters 16 (2), 1201-1209, 2016 | 70 | 2016 |
Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy DL Dheeraj, AM Munshi, M Scheffler, ATJ Van Helvoort, H Weman, ... Nanotechnology 24 (1), 015601, 2012 | 59 | 2012 |
Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy HL Zhou, TB Hoang, DL Dheeraj, ATJ Van Helvoort, L Liu, JC Harmand, ... Nanotechnology 20 (41), 415701, 2009 | 58 | 2009 |
Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy C Sartel, DL Dheeraj, F Jabeen, JC Harmand Journal of Crystal Growth 312 (14), 2073-2077, 2010 | 40 | 2010 |
Polarization dependent photocurrent spectroscopy of single wurtzite GaAs/AlGaAs core-shell nanowires DC Kim, DL Dheeraj, BO Fimland, H Weman Applied Physics Letters 102 (14), 2013 | 38 | 2013 |
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires DL Dheeraj, G Patriarche, H Zhou, JC Harmand, H Weman, BO Fimland Journal of crystal growth 311 (7), 1847-1850, 2009 | 35 | 2009 |
In situ heat-induced replacement of GaAs nanowires by Au VT Fauske, J Huh, G Divitini, DL Dheeraj, AM Munshi, C Ducati, H Weman, ... Nano letters 16 (5), 3051-3057, 2016 | 34 | 2016 |
Self-catalyzed MBE grown GaAs/GaAsxSb1− x core–shell nanowires in ZB and WZ crystal structures SG Ghalamestani, AM Munshi, DL Dheeraj, BO Fimland, H Weman, ... Nanotechnology 24 (40), 405601, 2013 | 32 | 2013 |