Two‐Dimensional Mott Insulators in SrVO3 Ultrathin Films M Gu, SA Wolf, J Lu Advanced Materials Interfaces 1 (7), 1300126, 2014 | 76 | 2014 |
Li2CuTi3O8–Li4Ti5O12 double spinel anode material with improved rate performance for Li-ion batteries D Wang, HY Xu, M Gu, CH Chen Electrochemistry Communications 11 (1), 50-53, 2009 | 56 | 2009 |
Metal-insulator transition induced in CaVO3 thin films M Gu, J Laverock, B Chen, KE Smith, SA Wolf, J Lu Journal of Applied Physics 113 (13), 2013 | 42 | 2013 |
Resonant Soft-X-Ray Emission as a Bulk Probe of Correlated Electron Behavior in Metallic J Laverock, B Chen, KE Smith, RP Singh, G Balakrishnan, M Gu, JW Lu, ... Physical Review Letters 111 (4), 047402, 2013 | 25 | 2013 |
Metal-insulator transition in SrTi1−xVxO3 thin films M Gu, SA Wolf, J Lu Applied Physics Letters 103 (22), 223110, 2013 | 24 | 2013 |
Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy R Comes, M Gu, M Khokhlov, J Lu, SA Wolf Journal of Magnetism and Magnetic Materials 324 (4), 524-527, 2012 | 24 | 2012 |
Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition R Comes, M Gu, M Khokhlov, H Liu, J Lu, SA Wolf Journal of Applied Physics 113 (2), 2013 | 22 | 2013 |
Hybrid low-k spacer scheme for advanced FinFET technology parasitic capacitance reduction M Gu, X Wang, W Li, M Aquilino, J Peng, H Wang, D Jaeger, K Tabakman, ... Electronics Letters 56 (10), 514-516, 2020 | 11 | 2020 |
FinFET with contact over active-gate for 5G ultra-wideband applications A Razavieh, V Mahajan, WL Oo, S Cimino, SV Khokale, K Nagahiro, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 9 | 2020 |
Nano-engineering of electron correlation in oxide superlattices J Laverock, M Gu, V Jovic, JW Lu, SA Wolf, RM Qiao, W Yang, KE Smith Nano Futures 1 (3), 031001, 2017 | 8 | 2017 |
Transport phenomena in SrVO3/SrTiO3 superlattices M Gu, SA Wolf, J Lu Journal of Physics D: Applied Physics 51 (10), 10LT01, 2018 | 7 | 2018 |
Extremely-low threshold voltage FinFET for 5G mmWave applications A Razavieh, Y Chen, T Ethirajan, M Gu, S Cimino, T Shimizu, MK Hassan, ... IEEE Journal of the Electron Devices Society 9, 165-169, 2020 | 6 | 2020 |
Forming a more robust sidewall spacer with lower k (dielectric constant) value T Han, M Gu, S Grunow, H Liu, S Sankaran, J Liu 2017 China Semiconductor Technology International Conference (CSTIC), 1-3, 2017 | 3 | 2017 |
Formation of epi source/drain material on transistor devices and the resulting structures M Gu, T Han US Patent 10,777,463, 2020 | 2 | 2020 |
Epitaxial structures of a semiconductor device having a wide gate pitch MV Aquilino, D Jaeger, M Gu, B Morgenfeld, H Wang, KS Duggimpudi, ... US Patent 10,971,625, 2021 | 1 | 2021 |
Lateral bipolar transistor M Gu, H Wang, J Singh US Patent 11,843,034, 2023 | | 2023 |
Bipolar junction transistors including a stress liner M Gu, J Singh, H Wang, J Johnson US Patent 11,721,722, 2023 | | 2023 |
Integrated circuit structure including asymmetric, recessed source and drain region and method for forming same M Gu, W Li US Patent 11,532,745, 2022 | | 2022 |
LDMOS finFET structure with buried insulator layer and method for forming same W Li, M Gu US Patent 11,410,998, 2022 | | 2022 |
Transistors with hybrid source/drain regions W Li, M Gu US Patent 11,374,002, 2022 | | 2022 |