Wendy Sarney
Wendy Sarney
CCDC Army Research Lab
Email confirmado em mail.mil
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Citado por
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with
M He, I Minus, P Zhou, SN Mohammed, JB Halpern, R Jacobs, WL Sarney, ...
Applied Physics Letters 77 (23), 3731-3733, 2000
Inversion of wurtzite GaN (0001) by exposure to magnesium
V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ...
Applied Physics Letters 75 (6), 808-810, 1999
Growth of GaN nanowires by direct reaction of Ga with NH3
M He, P Zhou, SN Mohammad, GL Harris, JB Halpern, R Jacobs, ...
Journal of Crystal Growth 231 (3), 357-365, 2001
Enhanced room-temperature luminescence efficiency through carrier localization in alloys
CJ Collins, AV Sampath, GA Garrett, WL Sarney, H Shen, M Wraback, ...
Applied Physics Letters 86 (3), 031916, 2005
Band gap of InAs 1− x Sb x with native lattice constant
SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ...
Physical Review B 86 (24), 245205, 2012
Surface reconstruction during molecular beam epitaxial growth of GaN (0001)
AR Smith, V Ramachandran, RM Feenstra, DW Greve, A Ptak, T Myers, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 3, 1998
Role of Ga flux in dislocation reduction in GaN films grown on SiC (0001)
CD Lee, A Sagar, RM Feenstra, CK Inoki, TS Kuan, WL Sarney, ...
Applied Physics Letters 79 (21), 3428-3430, 2001
Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers
G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ...
Applied Physics Letters 99 (14), 141116, 2011
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials
I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Applied Physics Letters 108 (22), 222101, 2016
Molecular beam epitaxy control and photoluminescence properties of InAsBi
SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
The effects of multiphase formation on strain relaxation and magnetization in multiferroic BiFeO3 thin films
SH Lim, M Murakami, WL Sarney, SQ Ren, A Varatharajan, V Nagarajan, ...
Advanced Functional Materials 17 (14), 2594-2599, 2007
Pulsed laser deposition and processing of wide band gap semiconductors and related materials
RD Vispute, S Choopun, R Enck, A Patel, V Talyansky, RP Sharma, ...
Journal of electronic materials 28 (3), 275-286, 1999
Properties of GaN epitaxial layers grown on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy
CD Lee, V Ramachandran, A Sagar, RM Feenstra, DW Greve, WL Sarney, ...
Journal of electronic materials 30 (3), 162-169, 2001
Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region
D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ...
Applied Physics Letters 103 (5), 051120, 2013
Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers
MW Cole, E Ngo, C Hubbard, SG Hirsch, M Ivill, WL Sarney, J Zhang, ...
Journal of Applied Physics 114 (16), 164107, 2013
Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications
G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ...
Applied Physics Letters 102 (11), 111108, 2013
Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
KM Yu, WL Sarney, SV Novikov, D Detert, R Zhao, JD Denlinger, ...
Applied Physics Letters 102 (10), 102104, 2013
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys
G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ...
Infrared Technology and Applications XXXVII 8012, 80120W, 2011
Development of bulk InAsSb alloys and barrier heterostructures for long wavelength infrared detectors
Y Lin, D Donetsky, D Wang, D Westerfield, G Kipshidze, L Shterengas, ...
Journal of Electronic Materials, 2015
Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
N Segercrantz, KM Yu, M Ting, WL Sarney, SP Svensson, SV Novikov, ...
Applied Physics Letters 107 (14), 142104, 2015
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