Philippe Dollfus
Philippe Dollfus
CNRS, Université Paris-Sud, Université Paris-Saclay
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Immunity to device variations in a spiking neural network with memristive nanodevices
D Querlioz, O Bichler, P Dollfus, C Gamrat
IEEE Transactions on Nanotechnology 12 (3), 288-295, 2013
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder
D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 042108, 2008
Thermoelectric effects in graphene nanostructures
P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
On the ballistic transport in nanometer-scaled DG MOSFETs
JS Martin, A Bournel, P Dollfus
IEEE Transactions on Electron Devices 51 (7), 1148-1155, 2004
The Wigner Monte Carlo method for nanoelectronic devices: a particle description of quantum transport and decoherence
D Querlioz, P Dollfus
John Wiley & Sons, 2013
Computationally efficient physics-based compact CNTFET model for circuit design
S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
Negative differential resistance in zigzag-edge graphene nanoribbon junctions
V Nam Do, P Dollfus
Journal of Applied Physics 107 (6), 063705, 2010
On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation
D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE Transactions on Electron Devices 54 (9), 2232-2242, 2007
heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
P Dollfus
Journal of Applied Physics 82 (8), 3911-3916, 1997
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
V Nam Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 063708, 2008
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...
IEEE Transactions on electron devices 41 (9), 1646-1654, 1994
Resonant tunnelling diodes based on graphene/h-BN heterostructure
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation
P Dollfus, A Bournel, S Galdin, S Barraud, P Hesto
IEEE Transactions on Electron Devices 51 (5), 749-756, 2004
Gate-induced spin precession in an In0. 53Ga0. 47As two dimensional electron gas
A Bournel, P Dollfus, P Bruno, P Hesto
The European Physical Journal Applied Physics 4 (1), 1-4, 1998
Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas
J Saint-Martin, A Bournel, F Monsef, C Chassat, P Dollfus
Semiconductor science and technology 21 (4), L29, 2006
Band offset predictions for strained group IV alloys: Si1-x-yGexCy on Si (001) and Si1-xGex on Si1-zGez (001)
S Galdin, P Dollfus, V Aubry-Fortuna, P Hesto, HJ Osten
Semiconductor science and technology 15 (6), 565, 2000
Controllable spin-dependent transport in armchair graphene nanoribbon structures
VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 053710, 2009
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J Saint-Martin, A Bournel, P Dollfus
Solid-State Electronics 50 (1), 94-101, 2006
Fabrication of a novel strained SiGe: C-channel planar 55 nm nMOSFET for high-performance CMOS
T Ernst, JM Hartmann, V Loup, F Ducroquet, P Dollfus, G Guegan, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
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