| FCC-ee: The lepton collider: Future circular collider conceptual design report volume 2 AEA Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ... The European Physical Journal Special Topics 228, 261-623, 2019 | 1261* | 2019 |
| FCC physics opportunities A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ... The European Physical Journal C 79 (6), 1-161, 2019 | 658 | 2019 |
| A capacitor-less 1T-DRAM cell S Okhonin, M Nagoga, JM Sallese, P Fazan IEEE Electron Device Letters 23 (2), 85-87, 2002 | 306 | 2002 |
| Charge-based modeling of junctionless double-gate field-effect transistors JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011 | 270 | 2011 |
| A SOI capacitor-less 1T-DRAM concept S Okhonin, M Nagoga, JM Sallese, P Fazan 2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207 …, 2001 | 257 | 2001 |
| A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz Solid-State Electronics 49 (3), 485-489, 2005 | 213 | 2005 |
| HE-LHC: the high-energy large hadron collider: future circular collider conceptual design report volume 4 A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ... The European Physical Journal Special Topics 228, 1109-1382, 2019 | 177 | 2019 |
| Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime F Jazaeri, L Barbut, A Koukab, JM Sallese Solid-State Electronics 82, 103-110, 2013 | 156 | 2013 |
| Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model JM Sallese, M Bucher, F Krummenacher, P Fazan Solid-State Electronics 47 (4), 677-683, 2003 | 134 | 2003 |
| A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics F Jazaeri, A Beckers, A Tajalli, JM Sallese 2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019 | 131 | 2019 |
| Hall effect sensors design, integration and behavior analysis MA Paun, JM Sallese, M Kayal Journal of Sensor and Actuator Networks 2 (1), 85-97, 2013 | 112 | 2013 |
| A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET AS Roy, JM Sallese, CC Enz Solid-State Electronics 50 (4), 687-693, 2006 | 83 | 2006 |
| A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation JM Sallese, AS Porret Solid-State Electronics 44 (6), 887-894, 2000 | 79 | 2000 |
| Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher Solid-State Electronics 52 (1), 99-106, 2008 | 71 | 2008 |
| A compact non-quasi-static extension of a charge-based MOS model AS Porret, JM Sallese, CC Enz IEEE Transactions on Electron Devices 48 (8), 1647-1654, 2001 | 67 | 2001 |
| Modeling nanowire and double-gate junctionless field-effect transistors F Jazaeri, JM Sallese Cambridge University Press, 2018 | 62 | 2018 |
| Capacitor-less 1-transistor DRAM Fazan, Okhonin, Nagoga, Sallese, Portmann, Ferrant, Kayal, Pastre, ... 2002 IEEE International SOI Conference, 10-13, 2002 | 59 | 2002 |
| Comparative study on the performance of five different Hall effect devices MA Paun, JM Sallese, M Kayal Sensors 13 (2), 2093-2112, 2013 | 57 | 2013 |
| A common core model for junctionless nanowires and symmetric double-gate FETs JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement IEEE transactions on electron devices 60 (12), 4277-4280, 2013 | 54 | 2013 |
| Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ... IEEE Transactions on Electron Devices 59 (1), 60-71, 2011 | 54 | 2011 |
