Photooxidation and quantum confinement effects in exfoliated black phosphorus A Favron, E Gaufrès, F Fossard, AL Phaneuf-L’Heureux, NYW Tang, ...
Nature materials 14 (8), 826-832, 2015
1313 2015 Molecular beam epitaxy growth of S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ...
Applied physics letters 82 (14), 2245-2247, 2003
525 2003 Band gap of S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje
Applied physics letters 82 (22), 3874-3876, 2003
505 2003 Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
495 2006 High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
296 1999 Luminescence of as-grown and thermally annealed GaAsN/GaAs S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
189 1998 Excitons bound to nitrogen clusters in GaAsN S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
108 1999 High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
99 1999 Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas
Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008
98 2008 Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ...
Applied Physics Letters 86 (11), 2005
94 2005 Mid-infrared polarized emission from black phosphorus light-emitting diodes J Wang, A Rousseau, M Yang, T Low, S Francoeur, S Kéna-Cohen
Nano letters 20 (5), 3651-3655, 2020
85 2020 Polarization-resolved raman study of bulk-like and davydov-induced vibrational modes of exfoliated black phosphorus AL Phaneuf-L’Heureux, A Favron, JF Germain, P Lavoie, P Desjardins, ...
Nano Letters 16 (12), 7761-7767, 2016
82 2016 Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy A Bergeron, J Ibrahim, R Leonelli, S Francoeur
Applied physics letters 110 (24), 2017
81 2017 Optical spectroscopy of single impurity centers in semiconductors S Francoeur, JF Klem, A Mascarenhas
Physical review letters 93 (6), 067403, 2004
80 2004 Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 P St-Jean, GA Seryogin, S Francoeur
Applied Physics Letters 96 (23), 2010
52 2010 Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects A Favron, E Gaufres, F Fossard, PL Lévesque, AL Phaneuf-L'Heureux, ...
arXiv preprint arXiv:1408.0345, 2014
50 2014 Second-order Raman scattering in exfoliated black phosphorus A Favron, FA Goudreault, V Gosselin, J Groulx, M Côté, R Leonelli, ...
Nano letters 18 (2), 1018-1027, 2018
48 2018 Phonon engineering in isotopically disordered silicon nanowires S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M De La Mata, ...
Nano letters 15 (6), 3885-3893, 2015
48 2015 Bi-induced vibrational modes in GaAsBi MJ Seong, S Francoeur, S Yoon, A Mascarenhas, S Tixier, M Adamcyk, ...
Superlattices and Microstructures 37 (6), 394-400, 2005
37 2005 Initiation and evolution of phase separation in heteroepitaxial InAlAs films B Shin, A Lin, K Lappo, RS Goldman, MC Hanna, S Francoeur, ...
Applied physics letters 80 (18), 3292-3294, 2002
34 2002