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Jelle Demeulemeester
Jelle Demeulemeester
Research scientist at imec
Email confirmado em creax.com - Página inicial
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Crystalline properties and strain relaxation mechanism of CVD grown GeSn
F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ...
ECS Journal of Solid State Science and Technology 2 (4), P134, 2013
1662013
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
1562011
Pt redistribution during Ni (Pt) silicide formation
J Demeulemeester, D Smeets, C Van Bockstael, C Detavernier, ...
Applied Physics Letters 93 (26), 2008
582008
Ge1− xSnx stressors for strained-Ge CMOS
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
Solid-State Electronics 60 (1), 53-57, 2011
492011
Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases
N Ghafoor, LJS Johnson, DO Klenov, J Demeulemeester, P Desjardins, ...
APL Materials 1 (2), 022105, 2013
482013
Mapping interfacial excess in atom probe data
P Felfer, B Scherrer, J Demeulemeester, W Vandervorst, JM Cairney
Ultramicroscopy 159, 438-444, 2015
392015
The influence of Pt redistribution on Ni1− xPtxSi growth properties
J Demeulemeester, D Smeets, CM Comrie, C Van Bockstael, W Knaepen, ...
Journal of Applied Physics 108 (4), 2010
352010
Artificial neural networks for instantaneous analysis of real-time Rutherford backscattering spectra
J Demeulemeester, D Smeets, NP Barradas, A Vieira, CM Comrie, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2010
352010
Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts
D Melkonyan, C Fleischmann, L Arnoldi, J Demeulemeester, A Kumar, ...
Ultramicroscopy 179, 100-107, 2017
282017
Sn diffusion during Ni germanide growth on Ge1–xSnx
J Demeulemeester, A Schrauwen, O Nakatsuka, S Zaima, M Adachi, ...
Applied Physics Letters 99 (21), 2011
282011
Determination of the dominant diffusing species during nickel and palladium germanide formation
CM Comrie, D Smeets, KJ Pondo, C Van der Walt, J Demeulemeester, ...
Thin Solid Films 526, 261-268, 2012
252012
On the growth kinetics of Ni (Pt) silicide thin films
J Demeulemeester, D Smeets, CM Comrie, NP Barradas, A Vieira, ...
Journal of Applied Physics 113 (16), 2013
222013
GeSn technology: Impact of Sn on Ge CMOS applications
S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ...
ECS Transactions 41 (7), 231, 2011
202011
On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge (1− x) Sn (x) unraveled with atom probe tomography
A Kumar, J Demeulemeester, J Bogdanowicz, J Bran, D Melkonyan, ...
Journal of Applied Physics 118 (2), 2015
182015
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
ECS Transactions 33 (6), 529, 2010
162010
ECS Trans.
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
ECS Trans 33, 529, 2010
162010
Paramagnetism and antiferromagnetic interactions in Cr-doped GaN
LMC Pereira, T Som, J Demeulemeester, MJ Van Bael, K Temst, ...
Journal of Physics: Condensed Matter 23 (34), 346004, 2011
152011
Simultaneous real-time x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, and sheet resistance measurements to study thin film growth kinetics by Kissinger …
D Smeets, J Demeulemeester, D Deduytsche, C Detavernier, CM Comrie, ...
Journal of Applied Physics 104 (10), 2008
152008
Nucleation and diffusion during growth of ternary Co1− xNixSi2 thin films studied by complementary techniques in real time
D Smeets, J Demeulemeester, K De Keyser, D Deduytsche, ...
Journal of Applied Physics 104 (9), 2008
152008
Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si (100): Nucleation and solid solubility of the monosilicides
A Schrauwen, J Demeulemeester, D Deduytsche, W Devulder, ...
Acta Materialia 130, 19-27, 2017
142017
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