| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| Crystalline properties and strain relaxation mechanism of CVD grown GeSn F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ... ECS Journal of Solid State Science and Technology 2 (4), P134, 2013 | 155 | 2013 |
| Pt redistribution during Ni (Pt) silicide formation J Demeulemeester, D Smeets, C Van Bockstael, C Detavernier, ... Applied Physics Letters 93 (26), 2008 | 58 | 2008 |
| Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 46 | 2011 |
| Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases N Ghafoor, LJS Johnson, DO Klenov, J Demeulemeester, P Desjardins, ... APL Materials 1 (2), 022105, 2013 | 45 | 2013 |
| Mapping interfacial excess in atom probe data P Felfer, B Scherrer, J Demeulemeester, W Vandervorst, JM Cairney Ultramicroscopy 159, 438-444, 2015 | 36 | 2015 |
| The influence of Pt redistribution on Ni1− xPtxSi growth properties J Demeulemeester, D Smeets, CM Comrie, C Van Bockstael, W Knaepen, ... Journal of Applied Physics 108 (4), 2010 | 36 | 2010 |
| The influence of Pt redistribution on Ni1− xPtxSi growth properties J Demeulemeester, D Smeets, CM Comrie, C Van Bockstael, W Knaepen, ... Journal of Applied Physics 108 (4), 2010 | 36 | 2010 |
| Artificial neural networks for instantaneous analysis of real-time Rutherford backscattering spectra J Demeulemeester, D Smeets, NP Barradas, A Vieira, CM Comrie, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2010 | 31 | 2010 |
| Sn diffusion during Ni germanide growth on Ge1–xSnx J Demeulemeester, A Schrauwen, O Nakatsuka, S Zaima, M Adachi, ... Applied Physics Letters 99 (21), 2011 | 27 | 2011 |
| Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts D Melkonyan, C Fleischmann, L Arnoldi, J Demeulemeester, A Kumar, ... Ultramicroscopy 179, 100-107, 2017 | 26 | 2017 |
| Determination of the dominant diffusing species during nickel and palladium germanide formation CM Comrie, D Smeets, KJ Pondo, C Van der Walt, J Demeulemeester, ... Thin Solid Films 526, 261-268, 2012 | 24 | 2012 |
| On the growth kinetics of Ni (Pt) silicide thin films J Demeulemeester, D Smeets, CM Comrie, NP Barradas, A Vieira, ... Journal of Applied Physics 113 (16), 2013 | 19 | 2013 |
| GeSn technology: Impact of Sn on Ge CMOS applications S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ... ECS Transactions 41 (7), 231, 2011 | 18 | 2011 |
| GeSn technology: Impact of Sn on Ge CMOS applications S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ... ECS Transactions 41 (7), 231, 2011 | 18 | 2011 |
| Assessment of Ge1-xSnx alloys for strained Ge CMOS devices S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... ECS Transactions 33 (6), 529, 2010 | 16 | 2010 |
| Assessment of Ge1-xSnx alloys for strained Ge CMOS devices S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... ECS Transactions 33 (6), 529, 2010 | 16 | 2010 |
| ECS Trans. S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... ECS Trans 33, 529, 2010 | 16 | 2010 |
| On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge (1− x) Sn (x) unraveled with atom probe tomography A Kumar, J Demeulemeester, J Bogdanowicz, J Bran, D Melkonyan, ... Journal of Applied Physics 118 (2), 2015 | 15 | 2015 |
| Paramagnetism and antiferromagnetic interactions in Cr-doped GaN LMC Pereira, T Som, J Demeulemeester, MJ Van Bael, K Temst, ... Journal of Physics: Condensed Matter 23 (34), 346004, 2011 | 15 | 2011 |
Benjamin VINCENTCoventor (a LAM Research Company)Email confirmado em coventor.com
