| Native point defects in GaSb J Kujala, N Segercrantz, F Tuomisto, J Slotte Journal of Applied Physics 116 (14), 2014 | 51 | 2014 |
| Electronic band structure of highly mismatched GaN1− xSbx alloys in a broad composition range N Segercrantz, KM Yu, M Ting, WL Sarney, SP Svensson, SV Novikov, ... Applied Physics Letters 107 (14), 2015 | 34 | 2015 |
| Highly mismatched GaN1− xSbx alloys: Synthesis, structure and electronic properties KM Yu, WL Sarney, SV Novikov, N Segercrantz, M Ting, M Shaw, ... Semiconductor Science and Technology 31 (8), 083001, 2016 | 22 | 2016 |
| Instability of the Sb vacancy in GaSb N Segercrantz, J Slotte, F Tuomisto, K Mizohata, J Räisänen Physical Review B 95 (18), 184103, 2017 | 18 | 2017 |
| Point defect balance in epitaxial GaSb N Segercrantz, J Slotte, I Makkonen, J Kujala, F Tuomisto, Y Song, ... Applied Physics Letters 105 (8), 2014 | 18 | 2014 |
| ZnO1− xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure M Ting, KM Yu, M Jaquez, ID Sharp, Y Ye, N Segercrantz, R Greif, ... Journal of Applied Physics 125 (15), 2019 | 17 | 2019 |
| Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix N Segercrantz, J Slotte, I Makkonen, F Tuomisto, IC Sandall, MJ Ashwin, ... Journal of Physics D: Applied Physics 50 (29), 295102, 2017 | 12 | 2017 |
| Increased p-type conductivity in GaNxSb1− x, experimental and theoretical aspects N Segercrantz, I Makkonen, J Slotte, J Kujala, TD Veal, MJ Ashwin, ... Journal of Applied Physics 118 (8), 2015 | 10 | 2015 |
| The influence of nitrogen and antimony on the optical quality of InNAs (Sb) alloys M Latkowska, M Baranowski, WM Linhart, F Janiaka, J Misiewicz, ... Journal of Physics D: Applied Physics 49 (11), 115105, 2016 | 8 | 2016 |
| Undoped p-type GaN1–xSbx alloys: Effects of annealing N Segercrantz, Y Baumgartner, M Ting, KM Yu, SS Mao, WL Sarney, ... Applied Physics Letters 109 (25), 2016 | 7 | 2016 |
| Intermixing studies in GaN1−xSbx highly mismatched alloys WL Sarney, SP Svensson, M Ting, N Segercrantz, W Walukiewicz, KM Yu, ... Applied Optics 56 (3), B64-B69, 2017 | 5 | 2017 |
| Positron annihilation spectroscopy on open-volume defects in group IV semiconductors J Slotte, F Tuomisto, J Kujala, AM Holm, N Segercrantz, S Kilpeläinen, ... ECS Transactions 64 (11), 241, 2014 | 3 | 2014 |
| In Situ Positron Annihilation Spectroscopy Analysis on Low‐Temperature Irradiated Semiconductors, Challenges and Possibilities J Slotte, S Kilpeläinen, N Segercrantz, K Mizohata, J Räisänen, ... physica status solidi (a) 218 (1), 2000232, 2021 | 2 | 2021 |
| Optoelectronic properties of III-V compounds and alloys N Segercrantz Aalto University, 2017 | 1 | 2017 |
| Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1−x/SiO2 heterostructures investigated by positron annihilation spectroscopy O Madia, N Segercrantz, V Afanas' ev, A Stesmans, L Souriau, J Slotte, ... physica status solidi (b) 251 (11), 2211-2215, 2014 | 1 | 2014 |
| Inverkan av kväve, vismut och temperatur på vakans-och defektdistributionen i GaSb N Segercrantz Aalto University, 2013 | 1 | 2013 |
| Impact of traffic on annual elevator energy consumption in high-rise buildings NC Segercrantz | 1 | 2010 |
| ZnO 1-x Te x highly mismatched alloys beyond the dilute alloy limit M Ting, KM Yu, M Jaquez, ID Sharp, Y Ye, N Segercrantz, R Greif, ... AMER INST PHYSICS, 2019 | | 2019 |
| Invited; Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors J Slotte, F Tuomisto, J Kujala, AM Holm, N Segercrantz, S Kilpeläinen, ... Electrochemical Society Meeting Abstracts 226, 1661-1661, 2014 | | 2014 |
| Defect studies in MBE grown GaSb {sub 1− x} Bi {sub x} layers N Segercrantz, J Kujala, F Tuomisto, J Slotte, Y Song, S Wang AIP Conference Proceedings 1583 (1), 2014 | | 2014 |
Filip TuomistoProfessor, University of HelsinkiEmail confirmado em helsinki.fi
