| High breakdown voltage p–n diodes on GaN on sapphire by MOCVD C Gupta, Y Enatsu, G Gupta, S Keller, UK Mishra physica status solidi (a) 213 (4), 878-882, 2016 | 64 | 2016 |
| Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility … S Kolluri, S Keller, D Brown, G Gupta, S Rajan, SP DenBaars, UK Mishra Journal of Applied Physics 108 (7), 2010 | 37 | 2010 |
| Measurement of the hot electron mean free path and the momentum relaxation rate in GaN DJ Suntrup, G Gupta, H Li, S Keller, UK Mishra Applied Physics Letters 105 (26), 2014 | 35 | 2014 |
| Barrier height inhomogeneity and its impact on (Al, In, Ga) N Schottky diodes MA Laurent, G Gupta, DJ Suntrup, SP DenBaars, UK Mishra Journal of Applied Physics 119 (6), 2016 | 34 | 2016 |
| Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ... Applied Physics Letters 102 (23), 2013 | 29 | 2013 |
| Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra Journal of Vacuum Science & Technology A 34 (3), 2016 | 25 | 2016 |
| Common Emitter current gain> 1 in III-N Hot Electron Transistors with 7nm GaN/InGaN base G Gupta, E Ahmadi, K Hestroffer, E Acuna, U Mishra Electron Device Letters, IEEE 36 (5), 439-441, 2015 | 22 | 2015 |
| 1200V GaN switches on sapphire substrate G Gupta, M Kanamura, B Swenson, D Bisi, B Romanczyk, C Neufeld, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 20 | 2022 |
| Short-circuit capability demonstrated for GaN power switches D Bisi, J Gritters, T Hosoda, M Kamiyama, B Cruse, YL Huang, J McKay, ... 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 370-375, 2021 | 20 | 2021 |
| Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors G Gupta, M Laurent, J Lu, S Keller, UK Mishra Applied Physics Express 7 (1), 014102, 2013 | 20 | 2013 |
| III-nitride devices including a graded depleting layer U Mishra, RK Lal, G Gupta, CJ Neufeld, D Rhodes US Patent 10,224,401, 2019 | 15 | 2019 |
| Estimation of hot electron relaxation time in GaN using hot electron transistors S Dasgupta, J Lu, N Raman, C Hurni, G Gupta, JS Speck, UK Mishra Applied Physics Express 6 (3), 034002, 2013 | 14 | 2013 |
| Commercially available N-polar GaN HEMT epitaxy for RF applications D Bisi, B Romanczyk, X Liu, G Gupta, T Brown-Heft, R Birkhahn, R Lal, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 11 | 2021 |
| Design Space of III-N Hot Electron Transistors using AlGaN and InGaN polarization-dipole barriers G Gupta, M Laurent, H Li, D Suntrup, E Acuna, S Keller, U Mishra Electron Device Letters, IEEE 36 (1), 23-25, 2015 | 11 | 2015 |
| Establishment of design space for high current gain in III-N hot electron transistors G Gupta, E Ahmadi, DJ Suntrup, UK Mishra Semiconductor Science and Technology 33 (1), 015018, 2017 | 8 | 2017 |
| Extraction of net interfacial polarization charge from Al0. 54In0. 12Ga0. 34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition MA Laurent, G Gupta, S Wienecke, AA Muqtadir, S Keller, SP DenBaars, ... Journal of Applied Physics 116 (18), 2014 | 7 | 2014 |
| Impact of gate-aperture overlap on the channel-pinch off in InGaAs/InGaN-based bonded aperture vertical electron transistor S Lal, J Lu, G Gupta, BJ Thibeault, SP DenBaars, UK Mishra IEEE electron device letters 34 (12), 1500-1502, 2013 | 7 | 2013 |
| Lateral III-nitride devices including a vertical gate module U Mishra, D Bisi, G Gupta, CJ Neufeld, BL Swenson, RK Lal US Patent 10,756,207, 2020 | 6 | 2020 |
| Barrier height fluctuations in InGaN polarization dipole diodes DJ Suntrup, G Gupta, H Li, S Keller, UK Mishra Applied Physics Letters 107 (17), 2015 | 6 | 2015 |
| Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor DJ Suntrup III, G Gupta, H Li, S Keller, UK Mishra Semiconductor Science and Technology 30 (10), 105003, 2015 | 5 | 2015 |
Umesh MishraUCSBEmail confirmado em ece.ucsb.edu
