Pınar Doğan
Pınar Doğan
Assistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki Kocman
Email confirmado em mu.edu.tr
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Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering
W Paul, DA Anderson
Solar Energy Materials 5 (3), 229-316, 1981
332*1981
Direct experimental determination of the spontaneous polarization of GaN
J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ...
Physical Review B 86 (8), 081302, 2012
1132012
Luminescence associated with stacking faults in GaN
J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn
Journal of Physics D: Applied Physics 47 (42), 423001, 2014
1112014
Macro-and micro-strain in GaN nanowires on Si (111)
B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert
Nanotechnology 22 (29), 295714, 2011
772011
Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells
B Gorka, B Rau, P Dogan, C Becker, F Ruske, S Gall, B Rech
Plasma Processes and Polymers 6 (S1), S36-S40, 2009
512009
Access regulation and the transition from copper to fiber networks in telecoms
M Bourreau, C Cambini, P Doğan
Journal of Regulatory Economics 45 (3), 233-258, 2014
472014
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder
KK Sabelfeld, VM Kaganer, F Limbach, P Dogan, O Brandt, L Geelhaar, ...
Applied Physics Letters 103 (13), 133105, 2013
462013
Nucleation, growth, and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence
VM Kaganer, S Fernandez-Garrido, P Dogan, KK Sabelfeld, O Brandt
Nano letters 16 (6), 3717-3725, 2016
442016
Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass
B Rau, T Weber, B Gorka, P Dogan, F Fenske, KY Lee, S Gall, B Rech
Materials Science and Engineering: B 159, 329-332, 2009
412009
Solid-phase crystallization of amorphous silicon on ZnO: Al for thin-film solar cells
C Becker, E Conrad, P Dogan, F Fenske, B Gorka, T Hänel, KY Lee, ...
Solar Energy Materials and Solar Cells 93 (6-7), 855-858, 2009
362009
Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles
VM Kaganer, B Jenichen, O Brandt, S Fernández-Garrido, P Dogan, ...
Physical Review B 86 (11), 115325, 2012
352012
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ...
Crystal growth & design 11 (10), 4257-4260, 2011
342011
Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation
P Dogan, E Rudigier, F Fenske, KY Lee, B Gorka, B Rau, E Conrad, ...
Thin Solid Films 516 (20), 6989-6993, 2008
322008
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si (1 1 1) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, AK Bluhm, L Geelhaar, H Riechert
Journal of crystal growth 323 (1), 418-421, 2011
302011
CSG minimodules using electron-beam evaporated silicon
R Egan, M Keevers, U Schubert, T Young, R Evans, S Partlin, M Wolf, ...
24th European Photovoltaic Solar Energy Conference, 2279-2285, 2009
302009
22nd European Photovoltaic Solar Energy Conference
K Wasmer, A Bidiville, J Michler, C Ballif, M Van der Meer, P Nasch
Milan, Italy, 2007
302007
Low-temperature epitaxy of silicon by electron beam evaporation
B Gorka, P Dogan, I Sieber, F Fenske, S Gall
Thin Solid Films 515 (19), 7643-7646, 2007
202007
The political economy of liberalization of fixed line telecommunications in Turkey
I Atiyas, P Dogan
Mossavar-Rahmani Center for Business and Government, Harvard Kennedy School …, 2009
142009
Level of access and infrastructure investment in network industries
M Bourreau, P Doğan, R Lestage
Journal of Regulatory Economics 46 (3), 237-260, 2014
112014
GaN/Fe core/shell nanowires for nonvolatile spintronics on Si
C Gao, R Farshchi, C Roder, P Dogan, O Brandt
Physical Review B 83 (24), 245323, 2011
112011
O sistema não pode efectuar a operação agora. Tente novamente mais tarde.
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