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Rongsheng Chen
Rongsheng Chen
Professor, South China University of Technology
Verified email at connect.ust.hk
Title
Cited by
Cited by
Year
Solution-processed metal-oxide thin-film transistors: a review of recent developments
R Chen, L Lan
Nanotechnology 30 (31), 312001, 2019
1002019
Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors
W Zhou, Z Meng, S Zhao, M Zhang, R Chen, M Wong, HS Kwok
IEEE Electron Device Letters 33 (10), 1414-1416, 2012
542012
Self-aligned indium–gallium–zinc oxide thin-film transistor with phosphorus-doped source/drain regions
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
IEEE Electron Device Letters 33 (8), 1150-1152, 2012
522012
Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
IEEE Electron Device Letters 34 (1), 60-62, 2012
452012
Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering
W Zhong, G Li, L Lan, B Li, R Chen
RSC Advances 8 (61), 34817-34822, 2018
442018
Multifunctional Optoelectronic Device Based on an Asymmetric Active Layer Structure
B Ren, G Yuen, S Deng, L Jiang, D Zhou, L Gu, P Xu, M Zhang, Z Fan, ...
Advanced Functional Materials 29 (17), 1807894, 2019
412019
Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
Thin Solid Films 548, 572-575, 2013
412013
Self-aligned top-gate InGaZnO thin film transistors using SiO 2/Al 2 O 3 stack gate dielectric
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
Thin solid films 548, 572-575, 2013
412013
Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017
402017
A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function
R Chen, X Zheng, W Deng, Z Wu
Solid-state electronics 51 (6), 975-981, 2007
402007
Voltage‐Dependent Multicolor Electroluminescent Device Based on Halide Perovskite and Chalcogenide Quantum‐Dots Emitters
J Zhang, B Ren, S Deng, J Huang, L Jiang, D Zhou, X Zhang, M Zhang, ...
Advanced Functional Materials 30 (4), 1907074, 2020
362020
Analysis and simulation of low-frequency noise in indium-zinc-oxide thin-film transistors
Y Liu, H He, R Chen, YF En, B Li, YQ Chen
IEEE Journal of the Electron Devices Society 6, 271-279, 2018
352018
High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
Applied Physics Letters 109 (18), 182105, 2016
342016
Feasible route for a large area few-layer MoS2 with magnetron sputtering
W Zhong, S Deng, K Wang, G Li, G Li, R Chen, HS Kwok
Nanomaterials 8 (8), 590, 2018
332018
High performance self-aligned top-gate ZnO thin film transistors using sputtered Al 2 O 3 gate dielectric
R Chen, W Zhou, M Zhang, HS Kwok
Thin Solid Films 520 (21), 6681-6683, 2012
332012
Strong Linearly Polarized Photoluminescence and Electroluminescence from Halide Perovskite/Azobenzene Dye Composite Film for Display Applications
J Zhang, C Meng, J Huang, L Jiang, D Zhou, R Chen, F Yeung, HS Kwok, ...
Advanced Optical Materials 8 (7), 1901824, 2020
292020
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors
W Zhong, R Yao, Y Liu, L Lan, R Chen
IEEE Transactions on Electron Devices 67 (8), 3157-3162, 2020
242020
Subthreshold characteristics of polysilicon TFTs
W Deng, X Zheng, R Chen, Y Liu
Solid-State Electronics 52 (5), 695-703, 2008
232008
InSnZnO Thin-Film Transistors With Vapor-Phase Self-Assembled Monolayer as Passivation Layer
W Zhong, G Li, L Lan, B Li, R Chen
IEEE Electron Device Letters 39 (11), 1680-1683, 2018
222018
Characterization of DC-stress-induced degradation in bridged-grain polycrystalline silicon thin-film transistors
M Zhang, W Zhou, R Chen, M Wong, HS Kwok
IEEE Transactions on Electron Devices 61 (9), 3206-3212, 2014
222014
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Articles 1–20