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Max Shulaker
Max Shulaker
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Title
Cited by
Cited by
Year
Carbon nanotube computer
MM Shulaker, G Hills, N Patil, H Wei, HY Chen, HSP Wong, S Mitra
Nature 501 (7468), 526-530, 2013
11602013
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip
MM Shulaker, G Hills, RS Park, RT Howe, K Saraswat, HSP Wong, S Mitra
Nature 547 (7661), 74-78, 2017
6802017
Modern microprocessor built from complementary carbon nanotube transistors
G Hills, C Lau, A Wright, S Fuller, MD Bishop, T Srimani, P Kanhaiya, ...
Nature 572 (7771), 595-602, 2019
5842019
Energy-efficient abundant-data computing: The N3XT 1,000 x
MMS Aly, M Gao, G Hills, CS Lee, G Pitner, MM Shulaker, TF Wu, ...
Computer 48 (12), 24-33, 2015
2722015
High-mobility, aligned crystalline domains of TIPS-pentacene with metastable polymorphs through lateral confinement of crystal growth.
G Giri, S Park, M Vosgueritchian, MM Shulaker, Z Bao
Advanced Materials (Deerfield Beach, Fla.) 26 (3), 487-493, 2013
2302013
Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities
MD Bishop, G Hills, T Srimani, C Lau, D Murphy, S Fuller, J Humes, ...
Nature Electronics 3 (8), 492-501, 2020
1992020
Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs
MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ...
2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014
1872014
Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study
TF Wu, H Li, PC Huang, A Rahimi, JM Rabaey, HSP Wong, MM Shulaker, ...
2018 IEEE International Solid-State Circuits Conference-(ISSCC), 492-494, 2018
1392018
The N3XT approach to energy-efficient abundant-data computing
MMS Aly, TF Wu, A Bartolo, YH Malviya, W Hwang, G Hills, I Markov, ...
Proceedings of the IEEE 107 (1), 19-48, 2018
1202018
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI
G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ...
IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018
1192018
Carbon nanotube circuit integration up to sub-20 nm channel lengths
MM Shulaker, J Van Rethy, TF Wu, L Suriyasena Liyanage, H Wei, Z Li, ...
ACS nano 8 (4), 3434-3443, 2014
942014
Linear increases in carbon nanotube density through multiple transfer technique
MM Shulaker, H Wei, N Patil, J Provine, HY Chen, HSP Wong, S Mitra
Nano letters 11 (5), 1881-1886, 2011
902011
Hysteresis in carbon nanotube transistors: measurement and analysis of trap density, energy level, and spatial distribution
RS Park, MM Shulaker, G Hills, L Suriyasena Liyanage, S Lee, A Tang, ...
ACS nano 10 (4), 4599-4608, 2016
832016
Monolithic 3D integration: A path from concept to reality
MM Shulaker, TF Wu, MM Sabry, H Wei, HSP Wong, S Mitra
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015
772015
Sensor-to-digital interface built entirely with carbon nanotube FETs
MM Shulaker, J Van Rethy, G Hills, H Wei, HY Chen, G Gielen, ...
IEEE Journal of Solid-State Circuits 49 (1), 190-201, 2013
742013
Hyperdimensional computing exploiting carbon nanotube FETs, resistive RAM, and their monolithic 3D integration
TF Wu, H Li, PC Huang, A Rahimi, G Hills, B Hodson, W Hwang, ...
IEEE Journal of Solid-State Circuits 53 (11), 3183-3196, 2018
712018
High-performance carbon nanotube field-effect transistors
MM Shulaker, G Pitner, G Hills, M Giachino, HSP Wong, S Mitra
2014 IEEE International Electron Devices Meeting, 33.6. 1-33.6. 4, 2014
702014
Hysteresis-free carbon nanotube field-effect transistors
RS Park, G Hills, J Sohn, S Mitra, MM Shulaker, HSP Wong
ACS nano 11 (5), 4785-4791, 2017
622017
Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfOX Films
C Lau, T Srimani, MD Bishop, G Hills, MM Shulaker
ACS nano 12 (11), 10924-10931, 2018
562018
Negative capacitance carbon nanotube FETs
T Srimani, G Hills, MD Bishop, U Radhakrishna, A Zubair, RS Park, ...
IEEE Electron Device Letters 39 (2), 304-307, 2017
482017
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