Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves JG Kim, L Shterengas, RU Martinelli, GL Belenky, DZ Garbuzov, WK Chan
Applied Physics Letters 81 (17), 3146-3148, 2002
149 2002 Continuous wave operation of diode lasers at 3.36 μm at 12 C L Shterengas, G Belenky, T Hosoda, G Kipshidze, S Suchalkin
Applied Physics Letters 93 (1), 2008
142 2008 Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ> 2.5 µm L Shterengas, GL Belenky, JG Kim, RU Martinelli
Semiconductor science and technology 19 (5), 655, 2004
124 2004 Type-I diode lasers for spectral region above 3 μm G Belenky, L Shterengas, G Kipshidze, T Hosoda
IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1426-1434, 2011
120 2011 High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In (Al) GaAsSb/GaSb diode lasers JG Kim, L Shterengas, RU Martinelli, GL Belenky
Applied Physics Letters 83 (10), 1926-1928, 2003
116 2003 High power 2.4 μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5% L Shterengas, G Belenky, MV Kisin, D Donetsky
Applied physics letters 90 (1), 2007
107 2007 Band gap of InAs 1− x Sb x with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ...
Physical Review B 86 (24), 245205, 2012
105 2012 Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ...
Applied Physics Letters 108 (22), 2016
94 2016 Diode lasers emitting near 3.44 [mu] m in continuous-wave regime at 300K T Hosoda, G Kipshidze, L Shterengas, G Belenky
Electronics letters 46 (21), 1, 2010
84 2010 Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ...
Applied physics letters 99 (14), 2011
83 2011 Continuous-wave room temperature operated 3.0 μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers T Hosoda, G Belenky, L Shterengas, G Kipshidze, MV Kisin
Applied Physics Letters 92 (9), 2008
72 2008 Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3- T Hosoda, G Kipshidze, G Tsvid, L Shterengas, G Belenky
IEEE Photonics Technology Letters 22 (10), 718-720, 2010
67 2010 Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80mW continuous-wave output power L Shterengas, G Belenky, G Kipshidze, T Hosoda
Applied Physics Letters 92 (17), 2008
63 2008 Type-I quantum well cascade diode lasers emitting near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, S Suchalkin, G Belenky
Applied Physics Letters 103 (12), 2013
57 2013 Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm L Shterengas, R Liang, G Kipshidze, T Hosoda, G Belenky, SS Bowman, ...
Applied Physics Letters 105 (16), 2014
55 2014 Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory A Thränhardt, I Kuznetsova, C Schlichenmaier, SW Koch, L Shterengas, ...
Applied Physics Letters 86 (20), 201117, 2005
54 2005 Cascade pumping of 1.9–3.3 μm type-i quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, R Liang, T Feng, M Wang, A Stein, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017
52 2017 High-power 2.3-μm GaSb-based linear laser array L Shterengas, GL Belenky, A Gourevitch, D Donetsky, JG Kim, ...
IEEE Photonics Technology Letters 16 (10), 2218-2220, 2004
52 2004 Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ...
Applied Physics Letters 103 (5), 2013
49 2013 High-Power 2.2- R Liang, J Chen, G Kipshidze, D Westerfeld, L Shterengas, G Belenky
IEEE Photonics Technology Letters 23 (10), 603-605, 2011
46 2011 
Dmitry DonetskyStony Brook University, NYEmail confirmado em stonybrook.edu
