Simon Rushworth
Simon Rushworth
EpiValence, Epichem, SAFC Hitech, Tyndall R&D projects
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Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors
M AzadáMalik
Journal of Materials Chemistry 4 (8), 1249-1253, 1994
1031994
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, A Pirovano, ...
Chemistry of Materials 20 (11), 3557-3559, 2008
602008
Optical, structural investigations and band-gap bowing parameter of GaInN alloys
M Moret, B Gil, S Ruffenach, O Briot, C Giesen, M Heuken, S Rushworth, ...
Journal of Crystal Growth 311 (10), 2795-2797, 2009
582009
Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium
E Bourret-Courchesne, Q Ye, DW Peters, J Arnold, M Ahmed, SJC Irvine, ...
Journal of crystal growth 217 (1-2), 47-54, 2000
582000
Liquid injection atomic layer deposition of silver nanoparticles
PR Chalker, S Romani, PA Marshall, MJ Rosseinsky, S Rushworth, ...
Nanotechnology 21 (40), 405602, 2010
572010
Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications
MC Artaud-Gillet, S Duchemin, R Odedra, G Orsal, N Rega, S Rushworth, ...
Journal of Crystal Growth 248, 163-168, 2003
542003
Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors
G Krötz, W Legner, G Müller, HW Grueninger, L Snith, B Leese, A Jones, ...
Materials Science and Engineering: B 29 (1-3), 154-159, 1995
531995
Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane
AC Jones, SA Rushworth
Journal of crystal growth 106 (2-3), 253-257, 1990
501990
Growth of low carbon content AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane
AC Jones, SA Rushworth
Journal of crystal growth 106 (2-3), 253-257, 1990
501990
Atomic layer deposition of Ru from using gas and plasma
N Leick, ROF Verkuijlen, L Lamagna, E Langereis, S Rushworth, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (2 …, 2011
462011
Addition of yttrium into films: Microstructure and electrical properties
C Dubourdieu, E Rauwel, H Roussel, F Ducroquet, B Holländer, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
422009
Preparation of dense, ultra-thin MIEC ceramic membranes by atmospheric spray-pyrolysis technique
A Abrutis, A Teiserskis, G Garcia, V Kubilius, Z Saltyte, Z Salciunas, ...
Journal of Membrane Science 240 (1-2), 113-122, 2004
402004
Vapor pressure of metal organic precursors
M Fulem, K Růžička, V Růžička, E Hulicius, T Šimeček, K Melichar, ...
Journal of crystal growth 248, 99-107, 2003
392003
Recent developments in metalorganic precursors for metalorganic chemical vapour deposition
AC Jones, SA Rushworth, J Auld
Journal of crystal growth 146 (1-4), 503-510, 1995
391995
Vapour pressure measurement of low volatility precursors
SA Rushworth, LM Smith, AJ Kingsley, R Odedra, R Nickson, P Hughes
Microelectronics Reliability 45 (5-6), 1000-1002, 2005
382005
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C Dubourdieu, H Roussel, C Jimenez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
382005
The growth of CdS and CdSe alloys by MOCVD using a new dimethylcadmium adduct
AC Jones, SA Rushworth, PJ Wright, B Cockayne, P O'Brien, JR Walsh
Journal of crystal growth 97 (3-4), 537-541, 1989
371989
Tri‐isopropyl gallium: A very promising precursor for chemical beam epitaxy
PA Lane, T Martin, RW Freer, PDJ Calcott, CR Whitehouse, AC Jones, ...
Applied physics letters 61 (3), 285-287, 1992
351992
Deposition of aluminum nitride thin films by MOCVD from the trimethylaluminum–ammonia adduct
AC Jones, SA Rushworth, DJ Houlton, JS Roberts, V Roberts, ...
Chemical Vapor Deposition 2 (1), 5-8, 1996
341996
The deposition of aluminum nitride thin films by metal‐organic CVD—an alternative precursor system
AC Jones, J Auld, SA Rushworth, EW Williams, PW Haycock, CC Tang, ...
Advanced Materials 6 (3), 229-231, 1994
331994
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