Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors W Zhou, Z Meng, S Zhao, M Zhang, R Chen, M Wong, HS Kwok IEEE electron device letters 33 (10), 1414-1416, 2012 | 54 | 2012 |
Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE Electron Device Letters 34 (1), 60-62, 2012 | 46 | 2012 |
Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric R Chen, W Zhou, M Zhang, M Wong, HS Kwok Thin Solid Films 548, 572-575, 2013 | 41 | 2013 |
Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017 | 40 | 2017 |
High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok Applied Physics Letters 109 (18), 2016 | 34 | 2016 |
High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric R Chen, W Zhou, M Zhang, HS Kwok Thin Solid Films 520 (21), 6681-6683, 2012 | 33 | 2012 |
Bridged-grain polycrystalline silicon thin-film transistors S Zhao, Z Meng, W Zhou, J Ho, M Wong, HS Kwok IEEE transactions on electron devices 60 (6), 1965-1970, 2013 | 27 | 2013 |
Characterization of DC-stress-induced degradation in bridged-grain polycrystalline silicon thin-film transistors M Zhang, W Zhou, R Chen, M Wong, HS Kwok IEEE Transactions on Electron Devices 61 (9), 3206-3212, 2014 | 22 | 2014 |
Top-gate thin-film transistors based on GaN channel layer R Chen, W Zhou, H Sing Kwok Applied Physics Letters 100 (2), 2012 | 22 | 2012 |
A Simple Method to Grow Thermal Interlayer for High-Performance SPC Poly-Si TFTs Using Gate Dielectric M Zhang, W Zhou, R Chen, M Wong, HS Kwok IEEE electron device letters 35 (5), 548-550, 2014 | 18 | 2014 |
Vertically integrated optical sensor with photoconductive gain> 10 and fill factor> 70% X Zhou, M Zhang, Y Xu, W Zhou, K Wang, A Nathan, M Wong, HS Kwok, ... IEEE Electron Device Letters 39 (3), 386-389, 2018 | 16 | 2018 |
Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors M Zhang, W Zhou, R Chen, M Wong, HS Kwok Microelectronics Reliability 54 (1), 30-32, 2014 | 15 | 2014 |
High-performance polycrystalline silicon thin-film transistors based on metal-induced crystallization in an oxidizing atmosphere R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE Electron Device Letters 36 (5), 460-462, 2015 | 13 | 2015 |
Study of the characteristics of solid phase crystallized bridged-grain poly-Si TFTs W Zhou, S Zhao, R Chen, M Zhang, JYL Ho, M Wong, HS Kwok IEEE Transactions on Electron Devices 61 (5), 1410-1416, 2014 | 13 | 2014 |
Fabrication of bridged-grain polycrystalline silicon thin film transistors by nanoimprint lithography W Zhou, JYL Ho, S Zhao, R Chen, M Wong, HS Kwok Thin solid films 534, 636-639, 2013 | 13 | 2013 |
Fabrication of high-performance bridged-grain polycrystalline silicon TFTs by laser interference lithography S Deng, R Chen, W Zhou, JYL Ho, M Wong, HS Kwok IEEE Transactions on Electron Devices 63 (3), 1085-1090, 2016 | 12 | 2016 |
Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers R Chen, W Zhou, M Zhang, HS Kwok Thin Solid Films 564, 397-400, 2014 | 12 | 2014 |
Top-gate GaN thin-film transistors based on AlN/GaN heterostructures R Chen, W Zhou, M Zhang, HS Kwok IEEE electron device letters 33 (9), 1282-1284, 2012 | 11 | 2012 |
Significant reduction of dynamic negative bias stress-induced degradation in bridged-grain poly-Si TFTs M Zhang, Z Xia, W Zhou, R Chen, M Wong IEEE Electron Device Letters 36 (2), 141-143, 2014 | 10 | 2014 |
OFF-state-stress-induced instability in switching polycrystalline silicon thin-film transistors and its improvement by a bridged-grain structure M Zhang, Y Yan, G Li, S Deng, W Zhou, R Chen, M Wong, HS Kwok IEEE Electron Device Letters 39 (11), 1684-1687, 2018 | 9 | 2018 |