| Highly stretchable resistive pressure sensors using a conductive elastomeric composite on a micropyramid array CL Choong, MB Shim, BS Lee, S Jeon, DS Ko, TH Kang, J Bae, SH Lee, ... Advanced materials 26 (21), 3451-3458, 2014 | 713 | 2014 |
| Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres M Park, J Im, M Shin, Y Min, J Park, H Cho, S Park, MB Shim, S Jeon, ... Nature nanotechnology 7 (12), 803-809, 2012 | 655 | 2012 |
| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 608 | 2009 |
| Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ... Nature materials 11 (4), 301-305, 2012 | 318 | 2012 |
| A flexible bimodal sensor array for simultaneous sensing of pressure and temperature NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ... Advanced Materials 26 (5), 796-804, 2014 | 279 | 2014 |
| Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors S Lee, K Ghaffarzadeh, A Nathan, J Robertson, S Jeon, C Kim, IH Song, ... Applied Physics Letters 98 (20), 203508, 2011 | 211 | 2011 |
| Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides and S Jeon, H Hwang Journal of Applied Physics 93 (10), 6393-6395, 2003 | 163 | 2003 |
| Persistent photoconductivity in Hf–In–Zn–O thin film transistors K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (14), 143510, 2010 | 131 | 2010 |
| Non-volatile semiconductor memory device with alternative metal gate material S Jeon, J Han, C Kim US Patent 7,391,075, 2008 | 121 | 2008 |
| Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (11), 113504, 2010 | 116 | 2010 |
| Electrical characteristics of prepared by annealing of S Jeon, CJ Choi, TY Seong, H Hwang Applied physics letters 79 (2), 245-247, 2001 | 116 | 2001 |
| Metal oxide thin film phototransistor for remote touch interactive displays SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, ... Advanced materials 24 (19), 2631-2636, 2012 | 114 | 2012 |
| Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications S Jeon, K Im, H Yang, H Lee, H Sim, S Choi, T Jang, H Hwang International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 108 | 2001 |
| Amorphous oxide semiconductor TFTs for displays and imaging A Nathan, S Lee, S Jeon, J Robertson Journal of Display Technology 10 (11), 917-927, 2014 | 107 | 2014 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 103 | 2017 |
| 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ... 2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010 | 103 | 2010 |
| Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology Y Park, J Choi, C Kang, C Lee, Y Shin, B Choi, J Kim, S Jeon, J Sel, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 94 | 2006 |
| Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory Y Yang, X Peng, HS Kim, T Kim, S Jeon, HK Kang, W Choi, J Song, ... Nano letters 15 (9), 5875-5882, 2015 | 84 | 2015 |
| Transparent semiconducting oxide technology for touch free interactive flexible displays S Lee, S Jeon, R Chaji, A Nathan Proceedings of the IEEE 103 (4), 644-664, 2015 | 81 | 2015 |
| Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application E Lee, A Benayad, T Shin, HI Lee, DS Ko, TS Kim, KS Son, M Ryu, S Jeon, ... Scientific reports 4 (1), 1-8, 2014 | 79 | 2014 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
