| Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer Y Alaskar*, S Arafin*, D Wickramaratne, MA Zurbuchen, L He, J McKay, ... Advanced Functional Materials 24 (42), 6629–6638, 2014 | 162 | 2014 |
| Review of recent progress of III-nitride nanowire lasers S Arafin, X Liu, Z Mi Journal of Nanophotonics 7 (1), 074599, 2013 | 128 | 2013 |
| Advanced InP photonic integrated circuits for communication and sensing S Arafin, LA Coldren IEEE Journal of Selected Topics in Quantum Electronics 24 (1), 1-12, 2017 | 111 | 2017 |
| Electric-field Control of Ferromagnetism in Mn-doped ZnO Nanowires LT Chang, CY Wang, J Tang, T Nie, W Jiang, CP Chu, S Arafin, L He, ... Nano Letters, 2014 | 91 | 2014 |
| GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 µm A Bachmann, K Kashani-Shirazi, S Arafin, MC Amann Selected Topics in Quantum Electronics, IEEE Journal of 15 (3), 933-940, 2009 | 65 | 2009 |
| Intestinal iontophoresis from mucoadhesive patches: a strategy for oral delivery A Banerjee, R Chen, S Arafin, S Mitragotri Journal of Controlled Release 297, 71-78, 2019 | 60 | 2019 |
| Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation A Kumar, S Arafin, MC Amann, R Singh Nanoscale research letters 8, 1-7, 2013 | 60 | 2013 |
| Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs) AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney Scientific Reports 6 (1), 19595, 2016 | 56 | 2016 |
| Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm A Bachmann, S Arafin, K Kashani-Shirazi New Journal of Physics 11 (12), 125014, 2009 | 52 | 2009 |
| Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at∼ 2.6 µm S Arafin, A Bachmann, K Kashani-Shirazi, MC Amann Applied Physics Letters 95 (13), 131120-131120-3, 2009 | 51 | 2009 |
| Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop S Arafin, A Simsek, SK Kim, S Dwivedi, W Liang, D Eliyahu, J Klamkin, ... Optics express 25 (2), 681-695, 2017 | 49 | 2017 |
| Two-dimensional Materials: Synthesis, Characterization and Potential Applications PK Nayak BoD–Books on Demand, 2016 | 48 | 2016 |
| Comprehensive characterization and analysis of hexagonal boron nitride on sapphire S Saha, A Rice, A Ghosh, SMN Hasan, W You, T Ma, A Hunter, LJ Bissell, ... AIP Advances 11 (5), 2021 | 40 | 2021 |
| Mid-infrared Lasers for Medical Applications: introduction to the feature issue F Toor, S Jackson, X Shang, S Arafin, H Yang Biomedical optics express 9 (12), 6255-6257, 2018 | 38 | 2018 |
| Nanoscale growth of GaAs on patterned Si (111) substrates by molecular beam epitaxy CP Chu, S Arafin, T Nie, K Yao, X Kou, L He, CY Wang, SY Chen, ... Crystal growth & design 14 (2), 593-598, 2014 | 37 | 2014 |
| Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer Y Alaskar, S Arafin, Q Lin, D Wickramaratne, J McKay, AG Norman, ... Journal of Crystal Growth 425, 268-273, 2015 | 35 | 2015 |
| Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5 to 2.7-µm Wavelength Range K Kashani-Shirazi, K Vizbaras, A Bachmann, S Arafin, MC Amann Photonics Technology Letters, IEEE 21 (16), 1106-1108, 2009 | 35 | 2009 |
| Ultra-low resistive GaSb/InAs tunnel junctions K Vizbaras, M Törpe, S Arafin, MC Amann Semiconductor Science and Technology 26 (7), 075021, 2011 | 33 | 2011 |
| Transverse-mode characteristics of GaSb-based VCSELs with buried-tunnel junctions S Arafin, A Bachmann, MC Amann IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1576-1583, 2011 | 29 | 2011 |
| Wavelength dependence of efficiency limiting mechanisms in type-I mid-infrared GaInAsSb/GaSb lasers TD Eales, IP Marko, BA Ikyo, AR Adams, S Arafin, S Sprengel, MC Amann, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-9, 2017 | 27 | 2017 |
