Jan A. Chroboczek
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Transport and magnetic resonance studies of polyaniline
JP Travers, J Chroboczek, F Devreux, F Genoud, M Nechtschein, A Syed, ...
Molecular Crystals and Liquid Crystals 121 (1-4), 195-199, 1985
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo
Journal of Applied Physics 107 (11), 114507, 2010
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
Fabrication and structure of epitaxial Er silicide films on (111) Si
FA d’Avitaya, A Perio, JC Oberlin, Y Campidelli, JA Chroboczek
Applied physics letters 54 (22), 2198-2200, 1989
Water effects in polyaniline: NMR and transport properties
M Nechtschein, C Santier, JP Travers, J Chroboczek, A Alix, M Ripert
Synthetic Metals 18 (1-3), 311-316, 1987
Electronic transport properties of epitaxial erbium silicide/silicon heterostructures
JY Duboz, PA Badoz, FA d’Avitaya, JA Chroboczek
Applied physics letters 55 (1), 84-86, 1989
Growth, characterization and electrical properties of epitaxial erbium silicide
FA d'Avitaya, PA Badoz, Y Campidelli, JA Chroboczek, JY Duboz, A Perio, ...
Thin Solid Films 184 (1-2), 283-293, 1990
Epitaxial erbium silicide films on Si (111) surface: Fabrication, structure, and electrical properties
JY Duboz, PA Badoz, A Perio, JC Oberlin, FA d'Avitaya, Y Campidelli, ...
Applied Surface Science 38 (1-4), 171-177, 1989
A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
S Jouan, R Planche, H Baudry, P Ribot, JA Chroboczek, D Dutartre, ...
IEEE Transactions on Electron Devices 46 (7), 1525-1531, 1999
Impurity conduction in silicon and effect of uniaxial compression on p-type Si
JA Chroboczek, FH Pollak, HF Staunton
Philosophical Magazine B 50 (1), 113-156, 1984
Crystallographic and magnetic structures of Er3Si5
S Auffret, J Pierre, B Lambert, JL Soubeyroux, JA Chroboczek
Physica B: Condensed Matter 162 (3), 271-280, 1990
Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors
A Mounib, G Ghibaudo, F Balestra, D Pogany, A Chantre, J Chroboczek
Journal of applied physics 79 (6), 3330-3336, 1996
Low frequency noise in thin gate oxide MOSFETs
R Kolarova, T Skotnicki, JA Chroboczek
Microelectronics Reliability 41 (4), 579-585, 2001
Carrier mobility in organic field-effect transistors
Y Xu, M Benwadih, R Gwoziecki, R Coppard, T Minari, C Liu, ...
Journal of Applied Physics 110 (10), 104513, 2011
1.54 μm photoluminescence of erbium-implanted silicon
D Moutonnet, H l'Haridon, PN Favennec, M Salvi, M Gauneau, ...
Materials Science and Engineering: B 4 (1-4), 75-77, 1989
Dimension scaling of noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
P Llinares, D Celi, O Roux-dit-Buisson, G Ghibaudo, JA Chroboczek
Journal of applied physics 82 (5), 2671-2675, 1997
Silicon overgrowth on CoSi2/Si (111) epitaxial structures: application to permeable base transistor
FA d'Avitaya, JA Chroboczek, C d'Anterroches, G Glastre, Y Campidelli, ...
Journal of Crystal Growth 81 (1-4), 463-469, 1987
Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSb
S Porowski, M Kończykowski, J Chroboczek
physica status solidi (b) 63 (1), 291-296, 1974
Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation
D Pogany, A Chantre, JA Chroboczek, G Ghibaudo
Applied physics letters 68 (4), 541-543, 1996
Origin of low-frequency noise in pentacene field-effect transistors
Y Xu, T Minari, K Tsukagoshi, J Chroboczek, F Balestra, G Ghibaudo
Solid-state electronics 61 (1), 106-110, 2011
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