Seongjun Kim
Seongjun Kim
National Institute for Nanomaterials Technology(NINT), Pohang University of Science and Technology
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Nanostructured-NiO/Si heterojunction photodetector
B Parida, S Kim, M Oh, S Jung, M Baek, JH Ryou, H Kim
Materials science in Semiconductor Processing 71, 29-34, 2017
Graphene-GaN Schottky diodes
S Kim, TH Seo, MJ Kim, KM Song, EK Suh, H Kim
Nano Research 8, 1327-1338, 2015
Electrical characteristics of Pt Schottky contacts fabricated on amorphous gallium indium zinc oxides
H Kim, S Kim, KK Kim, SN Lee, KS Ahn
Japanese journal of applied physics 50 (10R), 105702, 2011
Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses
HK Kim, SI Kim, S Kim, NS Lee, HK Shin, CW Lee
Nanoscale 12 (15), 8216-8229, 2020
Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures
S Kim, JH Ryou, RD Dupuis, H Kim
Applied physics letters 102 (5), 2013
Investigation of Fermi level pinning at semipolar (11–22) p-type GaN surfaces
YY Choi, S Kim, M Oh, H Kim, TY Seong
Superlattices and Microstructures 77, 76-81, 2015
Compound Ag nanocluster-graphene electrodes as transparent and current spreading electrodes for improved light output power in near-ultraviolet light emitting diodes
TH Seo, S Kim, MJ Kim, H Kim, EK Suh
Journal of Physics D: Applied Physics 47 (21), 215103, 2014
Carrier transport mechanism at metal/amorphous gallium indium zinc oxides interfaces
S Kim, KK Kim, H Kim
Applied Physics Letters 101 (3), 2012
Carrier Transport at Metal/Amorphous Hafnium–Indium–Zinc Oxide Interfaces
S Kim, Y Gil, Y Choi, KK Kim, HJ Yun, B Son, CJ Choi, H Kim
ACS Applied Materials & Interfaces 7 (40), 22385-22393, 2015
Effects of temperature on current crowding of GaN-based light-emitting diodes
E Jung, S Kim, H Kim
IEEE electron device letters 34 (2), 277-279, 2013
Electrical Characteristics of Ti/Al Contacts on AlInN: Mg/GaN Heterostructures
S Kim, HJ Kim, S Choi, Z Lochner, JH Ryou, RD Dupuis, KS Ahn, H Kim
Japanese Journal of Applied Physics 52 (10S), 10MA07, 2013
Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures
S Kim, HJ Kim, S Choi, JH Ryou, RD Dupuis, KS Ahn, H Kim
Japanese Journal of Applied Physics 52 (10S), 10MA05, 2013
Carrier transport properties of Mg-doped InAlN films
S Kim, HJ Kim, S Choi, Z Lochner, JH Ryou, RD Dupuis, H Kim
Electronics letters 48 (20), 1306-1308, 2012
Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer
M Oh, JW Yang, H Kim, S Kim, KS Ahn
Journal of the Korean Physical Society 76, 278-280, 2020
Ohmic contact mechanism for Ni/C-faced 4H-n-SiC substrate
S Kim, HK Kim, M Lim, S Jeong, MJ Kang, MS Kang, NS Lee, TV Cuong, ...
Journal of Nanomaterials 2019, 1-5, 2019
Carrier transport mechanism of Al contacts on n-type 4H-SiC
S Kim, HK Kim, S Jeong, MJ Kang, MS Kang, NS Lee, TV Cuong, SM Koo, ...
Materials Letters 228, 232-234, 2018
Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429–467 nm
E Jung, S Kim, H Kim
Current Applied Physics 12 (3), 885-889, 2012
Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model
S Kim, CJ Choi, H Kim
Electronics letters 49 (8), 561-562, 2013
Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
S Kim, KS Ahn, JH Ryou, H Kim
Electronic Materials Letters 13, 302-306, 2017
Surface characterization of ion implanted 4H-SiC epitaxial layers with ion energy and concentration variations
HK Kim, SJ Kim, J Buettner, MW Lim, T Erlbacher, AJ Bauer, SM Koo, ...
Materials Science Forum 963, 429-432, 2019
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