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Dr. Günter Reuscher
Dr. Günter Reuscher
VDI Technologiezentrum GmbH
Verified email at vdi.de
Title
Cited by
Cited by
Year
Injection and detection of a spin-polarized current in a light-emitting diode
R Fiederling, M Keim, G Reuscher, W Ossau, G Schmidt, A Waag, ...
Nature 402 (6763), 787-790, 1999
25131999
Laser diodes based on beryllium-chalcogenides
A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
1701997
CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
SV Ivanov, AA Toropov, SV Sorokin, TV Shubina, IV Sedova, AA Sitnikova, ...
Applied physics letters 74 (4), 498-500, 1999
1161999
Novel beryllium containing II–VI compounds: basic properties and potential applications
A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
1131998
Electron spin manipulation using semimagnetic resonant tunneling diodes
T Gruber, M Keim, R Fiederling, G Reuscher, W Ossau, G Schmidt, ...
Applied Physics Letters 78 (8), 1101-1103, 2001
1112001
II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction
F Fischer, A Waag, T Baron, G Landwehr, T Litz, G Reuscher, M Keim, ...
US Patent 6,372,536, 2002
512002
Epitaxy and magnetotransport properties of the diluted magnetic semiconductor
L Hansen, D Ferrand, G Richter, M Thierley, V Hock, N Schwarz, ...
Applied Physics Letters 79 (19), 3125-3127, 2001
492001
ZnSe-based blue-green lasers with a short-period superlattice waveguide
S Ivanov, A Toropov, S Sorokin, T Shubina, A Lebedev, P Kop’ev, ...
Applied physics letters 73 (15), 2104-2106, 1998
461998
Optoelectronic semiconductor component
F Fischer, G Reuscher, T Litz, G Landwehr
US Patent 6,618,410, 2003
422003
Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer
F Fischer, M Keller, T Gerhard, T Behr, T Litz, HJ Lugauer, M Keim, ...
Journal of applied physics 84 (3), 1650-1654, 1998
391998
Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures
U Lunz, M Keim, G Reuscher, F Fischer, K Schüll, A Waag, G Landwehr
Journal of applied physics 80 (11), 6329-6332, 1996
371996
Resonant inelastic soft x-ray scattering of Be chalcogenides
D Eich, O Fuchs, U Groh, L Weinhardt, R Fink, E Umbach, C Heske, ...
Physical Review B 73 (11), 115212, 2006
362006
Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment
AA Maksimov, SV Zaitsev, II Tartakovskii, VD Kulakovskii, DR Yakovlev, ...
Applied physics letters 75 (9), 1231-1233, 1999
351999
Nature 402 787 Crossref Google Scholar Ohno Y, Young DK, Beschoten B, Matsukura F, Ohno H and Awschalom DD 1999
R Fiederling, M Keim, G Reuscher, W Ossau, G Schmidt, A Waag, ...
Nature 402, 790, 1999
301999
BeCdSe as a ternary alloy for blue-green optoelectronic applications
SV Ivanov, OV Nekrutkina, SV Sorokin, VA Kaygorodov, TV Shubina, ...
Applied Physics Letters 78 (4), 404-406, 2001
262001
MBE growth and properties of bulk BeCdSe alloys and digital (BeSe: CdSe)/ZnSe quantum wells
SV Ivanov, AA Toropov, TV Shubina, AV Lebedev, SV Sorokin, ...
Journal of crystal growth 214, 109-114, 2000
232000
Cross-sectional atomic force microscopy of ZnMgSSe-and BeMgZnSe-based laser diodes
AV Ankudinov, AN Titkov, TV Shubina, SV Ivanov, PS Kop’ev, HJ Lugauer, ...
Applied Physics Letters 75 (17), 2626-2628, 1999
221999
Optoelectronic semiconductor component
F Fischer, T Litz, HJ Lugauer, M Keim, T Baron, G Reuscher, G Landwehr
US Patent 6,147,365, 2000
142000
Resonant tunneling in CdTe/Te double-barrier single-quantum-well heterostructures
G Reuscher, M Keim, F Fischer, A Waag, G Landwehr
Physical Review B 53 (24), 16414, 1996
141996
Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices
AA Maksimov, SV Zaitsev, II Tartakovskii, VD Kulakovskii, NA Gippius, ...
physica status solidi (b) 221 (1), 523-527, 2000
132000
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