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Yu-Ling Hsueh
Yu-Ling Hsueh
Email confirmado em unsw.edu.au
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Atomically engineered electron spin lifetimes of 30 s in silicon
TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ...
Science advances 3 (3), e1602811, 2017
882017
Spin-lattice relaxation times of single donors and donor clusters in silicon
YL Hsueh, H Büch, Y Tan, Y Wang, LCL Hollenberg, G Klimeck, ...
Physical review letters 113 (24), 246406, 2014
452014
Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
JA Mol, J Salfi, R Rahman, Y Hsueh, JA Miwa, G Klimeck, MY Simmons, ...
Applied Physics Letters 106 (20), 2015
212015
Spin–orbit coupling in silicon for electrons bound to donors
B Weber, YL Hsueh, TF Watson, R Li, AR Hamilton, LCL Hollenberg, ...
npj Quantum Information 4 (1), 61, 2018
142018
Spin-photon coupling for atomic qubit devices in silicon
EN Osika, S Kocsis, YL Hsueh, S Monir, C Chua, H Lam, B Voisin, ...
Physical Review Applied 17 (5), 054007, 2022
82022
Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots
T Ameen, H Ilatikhameneh, J Charles, Y Hsueh, S Chen, J Fonseca, ...
14th IEEE International Conference on Nanotechnology, 921-924, 2014
62014
Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor
R Krishnan, S Biswas, YL Hsueh, H Ma, R Rahman, B Weber
Nano Letters 23 (13), 6171-6177, 2023
52023
Multi‐Scale Modeling of Tunneling in Nanoscale Atomically Precise Si: P Tunnel Junctions
MB Donnelly, MM Munia, JG Keizer, Y Chung, AMSE Huq, EN Osika, ...
Advanced Functional Materials 33 (18), 2214011, 2023
52023
Hyperfine-mediated spin relaxation in donor-atom qubits in silicon
YL Hsueh, L Kranz, D Keith, S Monir, Y Chung, SK Gorman, R Rahman, ...
Physical Review Research 5 (2), 023043, 2023
52023
Shallow dopant pairs in silicon: An atomistic full configuration interaction study
A Tankasala, B Voisin, Z Kembrey, J Salfi, YL Hsueh, EN Osika, S Rogge, ...
Physical Review B 105 (15), 155158, 2022
52022
Spin-orbit coupling in silicon for electrons bound to donors. npj Quantum Inf. 4
B Weber, YL Hsueh, TF Watson, R Li, AR Hamilton, LCL Hollenberg, ...
52018
Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations
W Sun, S Bharadwaj, LP Yang, YL Hsueh, Y Wang, D Jiao, R Rahman, ...
Physical Review Applied 19 (6), 064038, 2023
42023
Phonon induced two-electron relaxation in two donor qubits in silicon
Y Hsueh, A Tankasala, Y Wang, G Klimeck, M Simmons, R Rahman
APS March Meeting Abstracts 2016, Y5. 008, 2016
42016
Shelving and latching spin readout in atom qubits in silicon
EN Osika, SK Gorman, S Monir, YL Hsueh, M Borscz, H Geng, ...
Physical Review B 106 (7), 075418, 2022
32022
Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach
H Ma, YL Hsueh, S Monir, Y Jiang, R Rahman
Communications Physics 5 (1), 165, 2022
32022
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
TA Ameen, H Ilatikhameneh, A Tankasala, Y Hsueh, J Charles, J Fonseca, ...
Beilstein Journal of Nanotechnology 9 (1), 1075-1084, 2018
32018
High-fidelity initialization and control of electron and nuclear spins in a four-qubit register
J Reiner, Y Chung, SH Misha, C Lehner, C Moehle, D Poulos, S Monir, ...
Nature Nanotechnology, 1-7, 2024
22024
Exploiting Atomic Control to Show When Atoms Become Molecules
L Kranz, EN Osika, S Monir, YL Hsueh, L Fricke, SJ Hile, Y Chung, ...
Advanced Functional Materials 34 (8), 2307285, 2024
12024
Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale
YL Hsueh, D Keith, Y Chung, SK Gorman, L Kranz, S Monir, Z Kembrey, ...
Advanced Materials, 2312736, 2024
12024
Limits to two-spin-qubit gate fidelity from thermal and vacuum fluctuations
W Sun, S Bharadwaj, LP Yang, YL Hsueh, Y Wang, D Jiao, R Rahman, ...
arXiv e-prints, arXiv: 2207.09441, 2022
12022
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