An Accurate Characterization of Capture Time Constants in GaN HEMTs JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019
23 2019 A simple method to extract trapping time constants of GaN HEMTs LC Nunes, JL Gomes, PM Cabral, JC Pedro
2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018
16 2018 Explaining the Different Time Constants Extracted from Low Frequency Y22 and JL Gomes, LC Nunes, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 432-435, 2020
5 2020 Deep-level traps’ capture time constant and its impact on nonlinear GaN HEMT modeling JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2018
4 2018 A transient two-tone RF method for the characterization of electron trapping capture and emission dynamics in GaN HEMTs PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 428-431, 2020
3 2020 Memristive Properties of GaN HEMTs Containing Deep‐Level Traps JL Gomes, LC Nunes, NA Sobolev, JC Pedro
physica status solidi (b) 256 (5), 1800387, 2019
3 2019 Transient Pulsed S-Parameters for Trapping Characterization JL Gomes, LC Nunes, JC Pedro
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2020
2 2020 The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ...
IEEE Transactions on Microwave Theory and Techniques, 2021
1 2021 A Review of Memory Effects in AlGaN/GaN HEMT Based RF PAs J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes
2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021
1 2021 Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020
1 2020 A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances JL Gomes, LC Nunes, FM Barradas, JC Pedro
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2022
2022 Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs J Pedro, J Gomes, L Nunes
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
2021 CONSISTENT MODELINGOF DC AND AC CHARACTERISTICS OF GaN/AlGaN MICROWAVE POWER HEMTS JC Pedro, JL Gomes, LC Nunes
Математическое моделирование в материаловедении электронных компонентов, 106-109, 2020
2020 Memristive properties in GaN HEMTs affected by deep-level traps JLL Gomes
Universidade de Aveiro, 2017
2017 Nonlinear Modeling of GaN HEMTs for RF and Microwave Applications JL Gomes, LC Nunes, JC Pedro
L. C. NunesResearch Assistant at Universidade de AveiroEmail confirmado em ua.pt
