An Accurate Characterization of Capture Time Constants in GaN HEMTs JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019
43 2019 A simple method to extract trapping time constants of GaN HEMTs LC Nunes, JL Gomes, PM Cabral, JC Pedro
2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018
16 2018 The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ...
IEEE Transactions on Microwave Theory and Techniques 70 (2), 1377-1390, 2021
15 2021 Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020
14 2020 A Review of Memory Effects in AlGaN/GaN HEMT Based RF PAs J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes
2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021
11 2021 Explaining the Different Time Constants Extracted from Low Frequency Y22 and JL Gomes, LC Nunes, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 432-435, 2020
9 2020 Transient Pulsed S-Parameters for Trapping Characterization JL Gomes, LC Nunes, JC Pedro
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2020
6 2020 A Simple Thermally Activated Trapping Model for AlGaN/GaN HEMTs LC Nunes, JL Gomes, FM Barradas, JC Pedro
2022 52th European Microwave Conference (EuMC), 2022
5 2022 A transient two-tone RF method for the characterization of electron trapping capture and emission dynamics in GaN HEMTs PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 428-431, 2020
4 2020 Memristive Properties of GaN HEMTs Containing Deep‐Level Traps JL Gomes, LC Nunes, NA Sobolev, JC Pedro
physica status solidi (b) 256 (5), 1800387, 2019
4 2019 Deep-level traps’ capture time constant and its impact on nonlinear GaN HEMT modeling JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2018
4 2018 Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs J Pedro, J Gomes, L Nunes
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
2 2021 On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model JL Gomes, FM Barradas, LC Nunes, JC Pedro
IEEE Transactions on Electron Devices, 2023
1 2023 On the Drain-to-Source Capacitance of Microwave FETs in Triode Region JL Gomes, LC Nunes, JC Pedro
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 333-335, 2022
1 2022 A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances JL Gomes, LC Nunes, FM Barradas, JC Pedro
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2022
1 2022 A New Vision of the Role Played by Buffer Dopants on the Operation of AlGaN/GaN HEMTs AS Alavijeh, JL Gomes, LC Nunes, JC Pedro
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2023
2023 A Simple Method to Extract the Thermal Resistance of GaN HEMTs from De-trapping Characteristics B González, LC Nunes, JL Gomes, JC Mendes, JL Jimenez
IEEE Electron Device Letters, 2023
2023 AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY JL Gomes, LC Nunes, JC Pedro
Математическое моделирование в материаловедении электронных компонентов, 104-107, 2021
2021 CONSISTENT MODELINGOF DC AND AC CHARACTERISTICS OF GaN/AlGaN MICROWAVE POWER HEMTS JC Pedro, JL Gomes, LC Nunes
Математическое моделирование в материаловедении электронных компонентов, 106-109, 2020
2020 Memristive properties in GaN HEMTs affected by deep-level traps JLL Gomes
Universidade de Aveiro, 2017
2017 
L. C. NunesResearch Assistant at Universidade de AveiroEmail confirmado em ua.pt
