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João Lucas Gomes
João Lucas Gomes
Instituto de Telecomunicações, Aveiro
Verified email at ua.pt
Title
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Cited by
Year
An Accurate Characterization of Capture Time Constants in GaN HEMTs
JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019
222019
A simple method to extract trapping time constants of GaN HEMTs
LC Nunes, JL Gomes, PM Cabral, JC Pedro
2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018
162018
Explaining the Different Time Constants Extracted from Low Frequency Y22 and -DLTS on GaN HEMTs
JL Gomes, LC Nunes, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 432-435, 2020
52020
Deep-level traps’ capture time constant and its impact on nonlinear GaN HEMT modeling
JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2018
42018
A transient two-tone RF method for the characterization of electron trapping capture and emission dynamics in GaN HEMTs
PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 428-431, 2020
32020
Memristive Properties of GaN HEMTs Containing Deep‐Level Traps
JL Gomes, LC Nunes, NA Sobolev, JC Pedro
physica status solidi (b) 256 (5), 1800387, 2019
32019
Transient Pulsed S-Parameters for Trapping Characterization
JL Gomes, LC Nunes, JC Pedro
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2020
22020
The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers
JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ...
IEEE Transactions on Microwave Theory and Techniques, 2021
12021
A Review of Memory Effects in AlGaN/GaN HEMT Based RF PAs
J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes
2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021
12021
Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers
PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020
12020
A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances
JL Gomes, LC Nunes, FM Barradas, JC Pedro
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2022
2022
Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs
J Pedro, J Gomes, L Nunes
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
2021
CONSISTENT MODELINGOF DC AND AC CHARACTERISTICS OF GaN/AlGaN MICROWAVE POWER HEMTS
JC Pedro, JL Gomes, LC Nunes
Математическое моделирование в материаловедении электронных компонентов, 106-109, 2020
2020
Memristive properties in GaN HEMTs affected by deep-level traps
JLL Gomes
Universidade de Aveiro, 2017
2017
Nonlinear Modeling of GaN HEMTs for RF and Microwave Applications
JL Gomes, LC Nunes, JC Pedro
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