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João Lucas Gomes
João Lucas Gomes
Infineon Technologies AG
Verified email at ua.pt
Title
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Cited by
Year
An Accurate Characterization of Capture Time Constants in GaN HEMTs
JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2465-2474, 2019
412019
A simple method to extract trapping time constants of GaN HEMTs
LC Nunes, JL Gomes, PM Cabral, JC Pedro
2018 IEEE/MTT-S International Microwave Symposium-IMS, 716-719, 2018
162018
The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers
JL Gomes, LC Nunes, FM Barradas, A Cooman, AEF de Jong, RM Heeres, ...
IEEE Transactions on Microwave Theory and Techniques 70 (2), 1377-1390, 2021
142021
Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers
PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
IEEE Transactions on Microwave Theory and Techniques 69 (1), 529-540, 2020
122020
A Review of Memory Effects in AlGaN/GaN HEMT Based RF PAs
J Pedro, P Tomé, T Cunha, F Barradas, L Nunes, P Cabral, J Gomes
2021 IEEE MTT-S International Wireless Symposium (IWS), 1-3, 2021
112021
Explaining the Different Time Constants Extracted from Low Frequency Y22 and -DLTS on GaN HEMTs
JL Gomes, LC Nunes, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 432-435, 2020
92020
Transient Pulsed S-Parameters for Trapping Characterization
JL Gomes, LC Nunes, JC Pedro
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2020
62020
A Simple Thermally Activated Trapping Model for AlGaN/GaN HEMTs
LC Nunes, JL Gomes, FM Barradas, JC Pedro
2022 52th European Microwave Conference (EuMC), 2022
52022
A transient two-tone RF method for the characterization of electron trapping capture and emission dynamics in GaN HEMTs
PM Tomé, FM Barradas, LC Nunes, JL Gomes, TR Cunha, JC Pedro
2020 IEEE/MTT-S International Microwave Symposium (IMS), 428-431, 2020
42020
Memristive Properties of GaN HEMTs Containing Deep‐Level Traps
JL Gomes, LC Nunes, NA Sobolev, JC Pedro
physica status solidi (b) 256 (5), 1800387, 2019
42019
Deep-level traps’ capture time constant and its impact on nonlinear GaN HEMT modeling
JL Gomes, LC Nunes, CF Gonçalves, JC Pedro
2018 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2018
42018
Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs
J Pedro, J Gomes, L Nunes
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
22021
On the Drain-to-Source Capacitance of Microwave FETs in Triode Region
JL Gomes, LC Nunes, JC Pedro
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 333-335, 2022
12022
A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances
JL Gomes, LC Nunes, FM Barradas, JC Pedro
2022 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2022
12022
A New Vision of the Role Played by Buffer Dopants on the Operation of AlGaN/GaN HEMTs
AS Alavijeh, JL Gomes, LC Nunes, JC Pedro
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre …, 2023
2023
On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model
JL Gomes, FM Barradas, LC Nunes, JC Pedro
IEEE Transactions on Electron Devices, 2023
2023
A Simple Method to Extract the Thermal Resistance of GaN HEMTs from De-trapping Characteristics
B González, LC Nunes, JL Gomes, JC Mendes, JL Jimenez
IEEE Electron Device Letters, 2023
2023
AlGaN/GaN HEMT TRAP CHARACTERISTIC FREQUENCY DEPENDENCE ON TEMPERATURE AND ITS IMPACT ON THE RF POWER AMPLIFIER LINEARIZABILITY
JL Gomes, LC Nunes, JC Pedro
Математическое моделирование в материаловедении электронных компонентов, 104-107, 2021
2021
CONSISTENT MODELINGOF DC AND AC CHARACTERISTICS OF GaN/AlGaN MICROWAVE POWER HEMTS
JC Pedro, JL Gomes, LC Nunes
Математическое моделирование в материаловедении электронных компонентов, 106-109, 2020
2020
Memristive properties in GaN HEMTs affected by deep-level traps
JLL Gomes
Universidade de Aveiro, 2017
2017
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