-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliabilityA Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Applied Physics Letters 80 (7), 1252-1254, 2002
127 2002 Effect of biomolecule position and fill in factor on sensitivity of a dielectric modulated double gate junctionless MOSFET biosensor E Rahman, A Shadman, QDM Khosru
Sensing and Bio-Sensing Research 13, 49-54, 2017
57 2017 High electron mobility transistors: performance analysis, research trend and applications MNA Aadit, SG Kirtania, F Afrin, MK Alam, QDM Khosru
Different Types of Field-Effect Transistors-Theory and Applications, 45-64, 2017
37 2017 Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/stack gate dielectrics A Nakajima, QDM Khosru, T Yoshirnoto, T Kidera, S Yokoyama
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
37 2001 Monolayer MoS2 and WSe2 double gate field effect transistor as super nernst pH sensor and nanobiosensor A Shadman, E Rahman, QDM Khosru
Sensing and Bio-Sensing Research 11, 45-51, 2016
35 2016 Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi
Journal of applied physics 78 (5), 3252-3257, 1995
35 1995 Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology A Nakajima, QDM Khosru, T Yoshimoto, S Yokoyama
Microelectronics Reliability 42 (12), 1823-1835, 2002
32 2002 Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 77 (9), 4494-4503, 1995
32 1995 Spatial distribution of trapped holes in SiO2 QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Journal of applied physics 76 (8), 4738-4742, 1994
30 1994 Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO_2 Stack Gate Dielectrics 中島安理
Technical Digest of the 2001 IEEE International Electron Devices Meeting …, 2001
28 2001 Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current N Chowdhury, SMF Azad, QDM Khosru
ECS Transactions 58 (16), 1, 2014
24 2014 Trilayer TMDC heterostructures for MOSFETs and nanobiosensors K Datta, A Shadman, E Rahman, QDM Khosru
Journal of Electronic Materials 46, 1248-1260, 2017
21 2017 Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations RN Sajjad, K Alam, QDM Khosru
Semiconductor science and technology 24 (4), 045023, 2009
21 2009 Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi
Applied physics letters 63 (18), 2537-2539, 1993
21 1993 Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif
Journal Of Alloys And Compounds 622, 471-476, 2015
20 2015 A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru
Nanotechnology 29 (23), 235203, 2018
19 2018 Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET MH Bhuyan, QDM Khosru
International Journal of Electrical and Computer Engineering 5 (5), 310-315, 2010
18 2010 Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
17 2015 FEM model of wraparound CNTFET with multi-CNT and its capacitance modeling MRK Akanda, QDM Khosru
IEEE transactions on electron devices 60 (1), 97-102, 2012
17 2012 Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor … A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
16 2002