Thierry Baron
Thierry Baron
CNRS, Université Grenoble Alpes
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Size effects in mechanical deformation and fracture of cantilevered silicon nanowires
MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret
Nano letters 9 (2), 525-529, 2009
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
Laser diodes based on beryllium-chalcogenides
A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
M Kanoun, A Souifi, T Baron, F Mazen
Applied physics letters 84 (25), 5079-5081, 2004
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
T Baron, F Martin, P Mur, C Wyon, M Dupuy
Journal of crystal growth 209 (4), 1004-1008, 2000
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
Chemical vapor deposition of Ge nanocrystals on
T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland
Applied Physics Letters 83 (7), 1444-1446, 2003
Statistics of electrical breakdown field in and films from millimeter to nanometer length scales
C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 242905, 2007
Single-electron charging effect in individual Si nanocrystals
T Baron, P Gentile, N Magnea, P Mur
Applied Physics Letters 79 (8), 1175-1177, 2001
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
Novel beryllium containing II–VI compounds: basic properties and potential applications
A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
S Decossas, F Mazen, T Baron, G Bremond, A Souifi
Nanotechnology 14 (12), 1272, 2003
Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu
Optics express 25 (5), 4632-4639, 2017
Electronic properties of Ge nanocrystals for non volatile memory applications
M Kanoun, C Busseret, A Poncet, A Souifi, T Baron, E Gautier
Solid-state electronics 50 (7-8), 1310-1314, 2006
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility
R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ...
Apl Materials 4 (4), 046101, 2016
Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy
T Baron, K Saminadayar, N Magnea
Journal of Applied Physics 83 (3), 1354-1370, 1998
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations
J Dalla Torre, JL Bocquet, Y Limoge, JP Crocombette, E Adam, G Martin, ...
Journal of Applied Physics 92 (2), 1084-1094, 2002
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