Thierry Baron
Thierry Baron
CNRS, Université Grenoble Alpes
Email confirmado em cea.fr
Título
Citado por
Citado por
Ano
Size effects in mechanical deformation and fracture of cantilevered silicon nanowires
MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret
Nano letters 9 (2), 525-529, 2009
1982009
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
1702001
Laser diodes based on beryllium-chalcogenides
A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
1561997
Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
M Kanoun, A Souifi, T Baron, F Mazen
Applied physics letters 84 (25), 5079-5081, 2004
1552004
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
T Baron, F Martin, P Mur, C Wyon, M Dupuy
Journal of crystal growth 209 (4), 1004-1008, 2000
1432000
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
1272008
Chemical vapor deposition of Ge nanocrystals on
T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland
Applied Physics Letters 83 (7), 1444-1446, 2003
1272003
Statistics of electrical breakdown field in and films from millimeter to nanometer length scales
C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 242905, 2007
1202007
Single-electron charging effect in individual Si nanocrystals
T Baron, P Gentile, N Magnea, P Mur
Applied Physics Letters 79 (8), 1175-1177, 2001
1182001
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
1142003
Novel beryllium containing II–VI compounds: basic properties and potential applications
A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
111*1998
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
1002004
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
1002004
Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication
S Decossas, F Mazen, T Baron, G Bremond, A Souifi
Nanotechnology 14 (12), 1272, 2003
1002003
Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu
Optics express 25 (5), 4632-4639, 2017
952017
Electronic properties of Ge nanocrystals for non volatile memory applications
M Kanoun, C Busseret, A Poncet, A Souifi, T Baron, E Gautier
Solid-state electronics 50 (7-8), 1310-1314, 2006
882006
Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility
R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ...
Apl Materials 4 (4), 046101, 2016
852016
Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy
T Baron, K Saminadayar, N Magnea
Journal of Applied Physics 83 (3), 1354-1370, 1998
811998
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
792012
Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations
J Dalla Torre, JL Bocquet, Y Limoge, JP Crocombette, E Adam, G Martin, ...
Journal of Applied Physics 92 (2), 1084-1094, 2002
752002
O sistema não pode efectuar a operação agora. Tente novamente mais tarde.
Artigos 1–20