Renata Butkute

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Arunas KrotkusCenter for Physical Sciences and Technology, Vilnius, LithuaniaVerified email at pfil.lt
Saulius Baleviciusprof. habil. dr.Verified email at pfi.lt
Sigitas TamuleviciusDirector of Institute of Materials Science and Professor of the Physics Department, Kaunas University of TechnologyVerified email at ktu.lt
Konstanze HildUniversity of GlasgowVerified email at glasgow.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowVerified email at glasgow.ac.uk
Alexei Baranovies, university montpellier 2Verified email at univ-montp2.fr
Arturas VailionisDirector, X-ray Lab, Stanford UniversityVerified email at stanford.edu
Voitech StankevicSemiconductor physics institute, Center for physical sciences and technologyVerified email at pfi.lt
Muhammad UsmanCSIRO's Data61 and The University of Melbourne, AustraliaVerified email at alumni.purdue.edu
Christopher A. BroderickRoyal Society University Research Fellow, School of Physics, University College Cork, IrelandVerified email at ucc.ie

Renata Butkute

Senior Researcher, Center for Physical Sciences and Technology, Vilnius, Lithuania

Verified email at ftmc.lt

MBE Growth Material Science Nanotechnology Bismide Devicess


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Effect of strains on electrical and optical properties of thin La 0.67 Ca0. 33MnO3 films B Vengalis, A Maneikis, F Anisimovas, R Butkut, L Dapkus, A Kindurys Journal of magnetism and magnetic materials 211 (1-3), 35-40, 2000	80	2000
Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2 E Kaminska, A Piotrowska, J Kossut, A Barcz, R Butkute, W Dobrowolski, ... Solid state communications 135 (1-2), 11-15, 2005	68	2005
Magnetoresistant La1− xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition: effect of deposition conditions, substrate material and film thickness A Abrutis, V Plausinaitiene, V Kubilius, A Teiserskis, Z Saltyte, R Butkute, ... Thin Solid Films 413 (1-2), 32-40, 2002	66	2002
Multi‐quantum well Ga (AsBi)/GaAs laser diodes with more than 6% of bismuth R Butkutė, A Geižutis, V Pačebutas, B Čechavičius, V Bukauskas, ... Electronics letters 50 (16), 1155-1157, 2014	56	2014
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ... Semiconductor Science and Technology 30 (9), 094008, 2015	44	2015
Structure and optical properties of InGaAsBi with up to 7% bismuth J Devenson, V Pačebutas, R Butkutė, A Baranov, A Krotkus Applied Physics Express 5 (1), 015503, 2012	44	2012
p‐type conducting ZnO: fabrication and characterisation E Kaminska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ... physica status solidi (c) 2 (3), 1119-1124, 2005	33	2005
Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells R Butkutė, G Niaura, E Pozingytė, B Čechavičius, A Selskis, M Skapas, ... Nanoscale research letters 12, 1-7, 2017	29	2017
Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses I Nevinskas, K Vizbaras, A Trinkūnas, R Butkutė, A Krotkus Optics Letters 42 (13), 2615-2618, 2017	22	2017
Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers S Pūkienė, M Karaliūnas, A Jasinskas, E Dudutienė, B Čechavičius, ... Nanotechnology 30 (45), 455001, 2019	21	2019
Preparation and characterization of hexagonal MnTe and ZnO layers E Przeździecka, E Kamińska, E Dynowska, R Butkutė, W Dobrowolski, ... physica status solidi (c) 2 (3), 1218-1223, 2005	21	2005
Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells R Butkutė, V Pačebutas, B Čechavičius, R Nedzinskas, A Selskis, ... Journal of crystal growth 391, 116-120, 2014	20	2014
Spin-polarized quasiparticle injection effect in MOCVD-grown YBa2Cu3O7/SrTiO3/La1− xSrxMnO3 heterostructures V Plausinaitiene, A Abrutis, B Vengalis, R Butkute, JP Senateur, Z Saltyte, ... Physica C: Superconductivity 351 (1), 13-16, 2001	20	2001
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs_1-xBi_x Alloys T Paulauskas, V Pačebutas, R Butkutė, B Čechavičius, A Naujokaitis, ... Nanoscale Research Letters 15, 1-12, 2020	18	2020
Photoluminescence investigation of GaAs1− xBix/GaAs heterostructures V Pačebutas, R Butkutė, B Čechavičius, J Kavaliauskas, A Krotkus Thin Solid Films 520 (20), 6415-6418, 2012	18	2012
Thermal annealing effect on the properties of GaBiAs R Butkutė, V Pačebutas, B Čechavičius, R Adomavičius, A Koroliov, ... physica status solidi c 9 (7), 1614-1616, 2012	18	2012
Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures R Butkutė, K Stašys, V Pačebutas, B Čechavičius, R Kondrotas, A Geižutis, ... Optical and Quantum Electronics 47 (4), 873-882, 2015	17	2015
p-type conducting ZnO: fabrication and characterization E Kamińska, A Piotrowska, J Kossut, R Butkutė, W Dobrowolski, ... Phys Stat Sol 2 (3), 1119-1124, 2005	17	2005
Growth and Investigation of Heterostructures Based on Multiferroic B Vengalis, J Devenson, A Oginskis, R Butkutė, A Maneikis, ... Acta Physica Polonica A 113 (3), 1095-1098, 2008	15	2008
InGaAs diodes for terahertz sensing—Effect of molecular beam epitaxy growth conditions V Palenskis, L Minkevičius, J Matukas, D Jokubauskis, S Pralgauskaitė, ... Sensors 18 (11), 3760, 2018	14	2018

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