| Stable indium oxide thin-film transistors with fast threshold voltage recovery Y Vygranenko, K Wang, A Nathan Applied Physics Letters 91 (26), 263508, 2007 | 147 | 2007 |
| Force detection in touch devices using piezoelectric sensors S Filiz, BQ Huppi, K Wang, PW Richards, G Vikram US Patent 9,983,715, 2018 | 83 | 2018 |
| Piezo based force sensing S Filiz, BQ Huppi, CJ Butler, MP Grunthaner, S Shahparnia, S Kang, ... US Patent 10,120,478, 2018 | 75 | 2018 |
| Low leakage heterostructure ultraviolet sensor Y Vygranenko, K Wang, A Nathan Applied physics letters 89 (17), 172105, 2006 | 62 | 2006 |
| Skip Connection U-Net for White Matter Hyperintensities Segmentation From MRI J Wu, Y Zhang, K Wang, X Tang IEEE Access 7, 155194-155202, 2019 | 55 | 2019 |
| Characterization of polycrystalline lead oxide for application in direct conversion X-ray detectors O Semeniuk, O Grynko, G Decrescenzo, G Juska, K Wang, A Reznik Scientific reports 7 (1), 8659, 2017 | 46 | 2017 |
| Lateral metal-semiconductor-metal photodetectors based on amorphous selenium K Wang, F Chen, G Belev, S Kasap, KS Karim Applied Physics Letters 95 (1), 013505, 2009 | 45 | 2009 |
| Low dark-current lateral amorphous-selenium metal–semiconductor–metal photodetector S Abbaszadeh, N Allec, K Wang, KS Karim IEEE Electron Device Letters 32 (9), 1263-1265, 2011 | 35 | 2011 |
| Optically transparent ZnO-based n–i–p ultraviolet photodetectors K Wang, Y Vygranenko, A Nathan Thin Solid Films 515 (17), 6981-6985, 2007 | 35 | 2007 |
| Electron Bombardment Induced Photoconductivity and High Gain in a Flat Panel Photodetector Based on a ZnS Photoconductor and ZnO Nanowire Field Emitters Z Zhang, K Wang, K Zheng, S Deng, N Xu, J Chen ACS Photonics 5 (10), 4147-4155, 2018 | 34 | 2018 |
| Fabrication and characterization of NiO/ZnO/ITO p–i–n heterostructure K Wang, Y Vygranenko, A Nathan Thin Solid Films 516 (7), 1640-1643, 2008 | 33 | 2008 |
| Touch Sensitive Display With Graded Index Layer J Chen, MS Rogers, C Chen, EA Dorjgotov, S Kang, K Wang, KH Sung US Patent App. 14/028,878, 2015 | 32 | 2015 |
| A Flat Panel Photodetector Formed by a ZnS Photoconductor and ZnO Nanowire Field Emitters Achieving High Responsivity From Ultraviolet to Visible Light for Indirect-Conversion … Z Zhang, K Wang, K Zheng, S Deng, N Xu, J Chen Journal of Lightwave Technology 36 (20), 5010-5015, 2018 | 31 | 2018 |
| Dual-gate photosensitive thin-film transistor-based active pixel sensor for indirect-conversion X-ray imaging K Wang, H Ou, J Chen IEEE Transactions on Electron Devices 62 (9), 2894-2899, 2015 | 28 | 2015 |
| Flexible x-ray imaging detector based on direct conversion in amorphous selenium TT Kuo, CM Wu, HH Lu, I Chan, K Wang, KC Leou Journal of Vacuum Science & Technology A 32 (4), 2014 | 28 | 2014 |
| ZnO-based and heterostructure ultraviolet sensors: a comparative study K Wang, Y Vygranenko, A Nathan Journal of applied physics 101 (11), 114508, 2007 | 28 | 2007 |
| Influence of the modulating interfacial state on Sr2FeMoO6 powder magnetoresistance properties K Wang, Y Sui Solid state communications 129 (2), 135-138, 2004 | 26 | 2004 |
| ε‐Ga2O3 Thin Film Avalanche Low‐Energy X‐Ray Detectors for Highly Sensitive Detection and Fast‐Response Applications Z Zhang, Z Chen, M Chen, K Wang, H Chen, S Deng, G Wang, J Chen Advanced Materials Technologies 6 (4), 2001094, 2021 | 25 | 2021 |
| Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI2 Photoconductor and ZnO Nanowire Vacuum Diode Z Zhang, Z Zhang, W Zheng, K Wang, H Chen, S Deng, F Huang, J Chen Advanced Materials Technologies, 1901108, 2020 | 25 | 2020 |
| Direct-conversion x-ray detector using lateral amorphous selenium structure F Chen, K Wang, Y Fang, N Allec, G Belev, S Kasap, KS Karim IEEE Sensors Journal 11 (2), 505-509, 2011 | 24 | 2011 |
Karim S KarimUniversity of WaterlooVerified email at uwaterloo.ca
