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Georges Landa
Georges Landa
Directeur de Recherches CNRS
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Optical-phonon behavior in Ga 1-x In x As: The role of microscopic strains and ionic plasmon coupling
J Groenen, R Carles, G Landa, C Guerret-Piécourt, C Fontaine, M Gendry
Physical Review B 58 (16), 10452, 1998
1291998
Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs
A Mlayah, R Carles, G Landa, E Bedel, A Muñoz‐Yagüe
Journal of applied physics 69 (7), 4064-4070, 1991
831991
Optical determination of strains in heterostructures: GaAs/Si as an example
G Landa, R Carles, C Fontaine, E Bedel, A Muñoz‐Yagüe
Journal of applied physics 66 (1), 196-200, 1989
811989
Optical determination of strains in heterostructures: GaAs/Si as an example
G Landa, R Carles, C Fontaine, E Bedel, A Muñoz‐Yagüe
Journal of Applied Physics 66 (1), 196-200, 1989
811989
Tensile and compressive strain relief in InxGa1− xAs epilayers grown on InP probed by Raman scattering
J Groenen, G Landa, R Carles, PS Pizani, M Gendry
Journal of applied physics 82 (2), 803-809, 1997
681997
Raman investigation of the InP lattice dynamics
E Bedel, G Landa, R Carles, JP Redoules, JB Renucci
Journal of Physics C: Solid State Physics 19 (10), 1471, 1986
611986
RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
E Bedel-Pereira, G Landa, R Carles, J Redoules, J Renucci
61*1986
Nanoscale pressure effects in individual double-wall carbon nanotubes
P Puech, E Flahaut, A Sapelkin, H Hubel, DJ Dunstan, G Landa, ...
Physical Review B 73 (23), 233408, 2006
472006
A computational chemist approach to gas sensors: Modeling the response of SnO2 to CO, O2, and H2O Gases
JM Ducéré, A Hemeryck, A Estève, MD Rouhani, G Landa, P Ménini, ...
Journal of computational chemistry 33 (3), 247-258, 2012
462012
Spectroscopic detection of carbon nanotube interaction with amphiphilic molecules in epoxy resin composites
A Bassil, P Puech, G Landa, W Bacsa, S Barrau, P Demont, C Lacabanne, ...
Journal of applied physics 97 (3), 034303, 2005
432005
Characterization of implantation and annealing of Zn‐implanted InP by Raman spectrometry
E Bedel, G Landa, R Carles, JB Renucci, JM Roquais, PN Favennec
Journal of applied physics 60 (6), 1980-1984, 1986
381986
CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
E Bedel-Pereira, G Landa, R Carles, J Renucci, J Roquais, P Favennec
38*1986
Raman determination of the composition in semiconductor ternary solid solutions
N Saint‐Cricq, G Landa, JB Renucci, I Hardy, A Muñoz‐Yague
Journal of applied physics 61 (3), 1206-1208, 1987
331987
GaSb/GaAs heteroepitaxy characterized as a stress-free system
C Raisin, A Rocher, G Landa, R Carles, L Lassabatere
Applied Surface Science 50 (1-4), 434-439, 1991
301991
Insights into crystalline preorganization of gas-phase precursors: densification mechanisms
S Olivier, JM Ducéré, C Mastail, G Landa, A Estève, MD Rouhani
Chemistry of Materials 20 (4), 1555-1560, 2008
272008
Strain effects on optical phonons in< 111> GaAs layers analyzed by Raman scattering
P Puech, G Landa, R Carles, C Fontaine
Journal of applied physics 82 (9), 4493-4499, 1997
271997
Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure
A Mlayah, R Carles, G Landa, E Bedel, C Fontaine, A Muñoz‐Yagüe
Journal of applied physics 68 (9), 4777-4781, 1990
271990
Dynamical properties of Ga 1− x In x As solid solutions: Influence of local distortion effects
G Landa, R Carles, JB Renucci
Solid state communications 86 (6), 351-355, 1993
261993
Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca, Sr) F2
G Landa, R Carles, JB Renucci, C Fontaine, E Bedel, A Munoz‐Yague
Journal of applied physics 60 (3), 1025-1031, 1986
251986
Influence of MOVPE growth parameters on the structural and optical properties of GaAs on Si (100)
A Freundlich, JC Grenet, G Neu, A Leycuras, C Verie, P Gibart, G Landa, ...
Journal of Crystal Growth 93 (1), 487-493, 1988
241988
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Artigos 1–20