Christoforos THEODOROU
Christoforos THEODOROU
IMEP-LAHC, Minatec, Grenoble INP
Email confirmado em minatec.inpg.fr
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Low-frequency noise sources in advanced UTBB FD-SOI MOSFETs
CG Theodorou, EG Ioannidis, F Andrieu, T Poiroux, O Faynot, ...
IEEE Transactions on Electron Devices 61 (4), 1161-1167, 2014
422014
Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction
TA Karatsori, CG Theodorou, EG Ioannidis, S Haendler, E Josse, ...
Solid-State Electronics 111, 123-128, 2015
372015
Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control
N Fasarakis, T Karatsori, DH Tassis, CG Theodorou, F Andrieu, O Faynot, ...
IEEE Transactions on Electron Devices 61 (4), 969-975, 2014
362014
Impact of source–drain series resistance on drain current mismatch in advanced fully depleted SOI n-MOSFETs
EG Ioannidis, CG Theodorou, S Haendler, E Josse, CA Dimitriadis, ...
IEEE Electron Device Letters 36 (5), 433-435, 2015
282015
Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO thin-film transistors
CG Theodorou, A Tsormpatzoglou, CA Dimitriadis, SA Khan, MK Hatalis, ...
IEEE electron device letters 32 (7), 898-900, 2011
272011
Symmetrical unified compact model of short-channel double-gate MOSFETs
K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ...
Solid-state electronics 69, 55-61, 2012
242012
All operation region characterization and modeling of drain and gate current mismatch in 14-nm fully depleted SOI MOSFETs
TA Karatsori, CG Theodorou, E Josse, CA Dimitriadis, G Ghibaudo
IEEE Transactions on Electron Devices 64 (5), 2080-2085, 2017
212017
Origin of the low-frequency noise in n-channel FinFETs
CG Theodorou, N Fasarakis, T Hoffman, T Chiarella, G Ghibaudo, ...
Solid-state electronics 82, 21-24, 2013
212013
Drain-current flicker noise modeling in nMOSFETs from a 14-nm FDSOI technology
EG Ioannidis, CG Theodorou, TA Karatsori, S Haendler, CA Dimitriadis, ...
IEEE Transactions on Electron Devices 62 (5), 1574-1579, 2015
202015
Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET
S Vodapally, CG Theodorou, Y Bae, G Ghibaudo, S Cristoloveanu, KS Im, ...
IEEE Transactions on Electron Devices 64 (9), 3634-3638, 2017
192017
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 μm down to 20 nm
EG Ioannidis, S Haendler, CG Theodorou, S Lasserre, CA Dimitriadis, ...
Solid-state electronics 95, 28-31, 2014
192014
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs
CG Theodorou, EG Ioannidis, S Haendler, N Planes, F Arnaud, J Jomaah, ...
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
182012
Analytical compact model for lightly doped nanoscale ultrathin-body and box SOI MOSFETs with back-gate control
TA Karatsori, A Tsormpatzoglou, CG Theodorou, EG Ioannidis, ...
IEEE Transactions on Electron Devices 62 (10), 3117-3124, 2015
172015
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs
CG Theodorou, EG Ioannidis, S Haendler, N Planes, E Josse, ...
2015 IEEE international reliability physics symposium, XT. 1.1-XT. 1.6, 2015
172015
Short channel effects on LTPS TFT degradation
DC Moschou, CG Theodorou, NA Hastas, A Tsormpatzoglou, ...
Journal of Display Technology 9 (9), 747-754, 2013
152013
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
CG Theodorou, EG Ioannidis, S Haendler, E Josse, CA Dimitriadis, ...
Solid-State Electronics 117, 88-93, 2016
132016
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators
I Messaris, TA Karatsori, N Fasarakis, CG Theodorou, S Nikolaidis, ...
Microelectronics Reliability 56, 10-16, 2016
132016
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs
EG Ioannidis, S Haendler, CG Theodorou, N Planes, CA Dimitriadis, ...
2014 44th European Solid State Device Research Conference (ESSDERC), 214-217, 2014
132014
Low-frequency noise characteristics of GaN nanowire gate-all-around transistors with/without 2-DEG channel
KS Im, MSP Reddy, R Caulmilone, CG Theodorou, G Ghibaudo, ...
IEEE Transactions on Electron Devices 66 (3), 1243-1248, 2019
122019
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs
R Lavieville, T Karatsori, C Theodorou, S Barraud, CA Dimitriadis, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 142-145, 2016
102016
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