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Hugh Barnaby
Hugh Barnaby
Arizona State Univerisity
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Total-ionizing-dose effects in modern CMOS technologies
HJ Barnaby
IEEE transactions on nuclear science 53 (6), 3103-3121, 2006
7982006
Analysis of single-event transients in analog circuits
P Adell, RD Schrimpf, HJ Barnaby, R Marec, C Chatry, P Calvel, C Barillot, ...
IEEE Transactions on nuclear Science 47 (6), 2616-2623, 2000
1672000
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
X Hu, BK Choi, HJ Barnaby, DM Fleetwood, RD Schrimpf, S Lee, ...
IEEE Transactions on Nuclear Science 51 (2), 293-297, 2004
1462004
Conductive bridging random access memory—materials, devices and applications
MN Kozicki, HJ Barnaby
Semiconductor Science and Technology 31 (11), 113001, 2016
1402016
Compact modeling of total ionizing dose and aging effects in MOS technologies
IS Esqueda, HJ Barnaby, MP King
IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015
1312015
Modeling ionizing radiation effects in solid state materials and CMOS devices
HJ Barnaby, ML McLain, IS Esqueda, XJ Chen
IEEE Transactions on Circuits and Systems I: Regular Papers 56 (8), 1870-1883, 2009
1292009
Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies
IS Esqueda, HJ Barnaby, ML Alles
IEEE transactions on nuclear science 52 (6), 2259-2264, 2005
1192005
Total ionizing dose effects in shallow trench isolation oxides
F Faccio, HJ Barnaby, XJ Chen, DM Fleetwood, L Gonella, M McLain, ...
Microelectronics Reliability 48 (7), 1000-1007, 2008
1132008
Reconfigurable memristive device technologies
AH Edwards, HJ Barnaby, KA Campbell, MN Kozicki, W Liu, MJ Marinella
Proceedings of the IEEE 103 (7), 1004-1033, 2015
1112015
Analytical model for proton radiation effects in bipolar devices
HJ Barnaby, SK Smith, RD Schrimpf, DM Fleetwood, RL Pease
IEEE Transactions on Nuclear Science 49 (6), 2643-2649, 2002
1072002
Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits
M McLain, HJ Barnaby, KE Holbert, RD Schrimpf, H Shah, A Amort, ...
IEEE Transactions on Nuclear Science 54 (6), 2210-2217, 2007
1022007
Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides
XJ Chen, HJ Barnaby, B Vermeire, K Holbert, D Wright, RL Pease, ...
IEEE Transactions on Nuclear Science 54 (6), 1913-1919, 2007
1012007
Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells
W Chen, HJ Barnaby, MN Kozicki
IEEE Electron Device Letters 37 (5), 580-583, 2016
962016
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures
RL Pease, DG Platteter, GW Dunham, JE Seiler, HJ Barnaby, ...
IEEE transactions on nuclear science 51 (6), 3773-3780, 2004
902004
Proton radiation response mechanisms in bipolar analog circuits
HJ Barnaby, RD Schrimpf, AL Sternberg, V Berthe, CR Cirba, RL Pease
IEEE Transactions on Nuclear Science 48 (6), 2074-2080, 2001
872001
The effects of hydrogen on the enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits
RL Pease, PC Adell, BG Rax, XJ Chen, HJ Barnaby, KE Holbert, ...
IEEE Transactions on Nuclear Science 55 (6), 3169-3173, 2008
832008
Monolithically integrated RRAM-and CMOS-based in-memory computing optimizations for efficient deep learning
S Yin, Y Kim, X Han, H Barnaby, S Yu, Y Luo, W He, X Sun, JJ Kim, J Seo
IEEE Micro 39 (6), 54-63, 2019
802019
A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells
W Chen, R Fang, MB Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ...
Nanotechnology 27 (25), 255202, 2016
802016
Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
R Fang, Y Gonzalez Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, ...
Applied Physics Letters 104 (18), 2014
762014
Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices
PC Adell, HJ Barnaby, RD Schrimpf, B Vermeire
IEEE Transactions on Nuclear Science 54 (6), 2174-2180, 2007
762007
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