r. wacquez
r. wacquez
Email confirmado em cea.fr
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Single-donor ionization energies in a nanoscale CMOS channel
M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto
Nature nanotechnology 5 (2), 133-137, 2009
2752009
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...
Electron Devices Meeting, 2006. IEDM'06. International, 1-4, 2006
1362006
A two-atom electron pump
B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ...
Nature communications 4, 1581, 2013
1192013
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 18.1. 1-18.1. 4, 2012
992012
Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-Stückelberg Interferometry
E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ...
Physical review letters 110 (13), 136802, 2013
782013
Few electron limit of n-type metal oxide semiconductor single electron transistors
E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
762012
Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology
X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ...
Physical Review X 3 (2), 021012, 2013
752013
Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor
AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ...
Nano letters 15 (7), 4622-4627, 2015
672015
Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
B Roche, E Dupont-Ferrier, B Voisin, M Cobian, X Jehl, R Wacquez, ...
Physical Review Letters 108 (20), 206812, 2012
642012
High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 9.2. 1-9.2. 4, 2013
622013
A tunable, dual mode field-effect or single electron transistor
B Roche, B Voisin, X Jehl, R Wacquez, M Sanquer, M Vinet, ...
Applied Physics Letters 100 (3), 032107, 2012
562012
UTBB FDSOI transistors with dual STI for a multi-V t strategy at 20nm node and below
L Grenouillet, M Vinet, J Gimbert, B Giraud, JP Noel, Q Liu, P Khare, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 3.6. 1-3.6. 4, 2012
552012
Charge pumping through a single donor atom
GC Tettamanzi, R Wacquez, S Rogge
New Journal of Physics 16 (6), 063036, 2014
522014
Compact silicon double and triple dots realized with only two gates
M Pierre, R Wacquez, B Roche, X Jehl, M Sanquer, M Vinet, E Prati, ...
Applied physics letters 95 (24), 242107, 2009
452009
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ...
Applied Physics Letters 96 (26), 264102, 2010
372010
Switching quantum transport in a three donors silicon fin-field effect transistor
G Leti, E Prati, M Belli, G Petretto, M Fanciulli, M Vinet, R Wacquez, ...
Applied Physics Letters 99 (24), 242102, 2011
262011
Valley blockade and multielectron spin-valley Kondo effect in silicon
A Crippa, MLV Tagliaferri, D Rotta, M De Michielis, G Mazzeo, M Fanciulli, ...
Physical Review B 92 (3), 035424, 2015
252015
UTBB FDSOI scaling enablers for the 10nm node
L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ...
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S …, 2013
252013
UTBB FDSOI scaling enablers for the 10nm node
L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ...
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S …, 2013
252013
Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor
V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ...
Solid-State Electronics 84, 179-184, 2013
232013
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