Sina Najmaei
Sina Najmaei
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Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
Y Zhan, Z Liu, S Najmaei, PM Ajayan, J Lou
small 8 (7), 966-971, 2012
17752012
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
S Najmaei, Z Liu, W Zhou, X Zou, G Shi, S Lei, BI Yakobson, JC Idrobo, ...
Nature materials 12 (8), 754-759, 2013
16492013
Intrinsic structural defects in monolayer molybdenum disulfide
W Zhou, X Zou, S Najmaei, Z Liu, Y Shi, J Kong, J Lou, PM Ajayan, ...
Nano letters 13 (6), 2615-2622, 2013
15512013
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS nano 8 (8), 8292-8299, 2014
10472014
Second harmonic microscopy of monolayer MoS 2
N Kumar, S Najmaei, Q Cui, F Ceballos, PM Ajayan, J Lou, H Zhao
Physical Review B 87 (16), 161403, 2013
5342013
Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe
S Lei, L Ge, S Najmaei, A George, R Kappera, J Lou, M Chhowalla, ...
ACS nano 8 (2), 1263-1272, 2014
4712014
Plasmonic Hot Electron Induced Structural Phase Transition in a MoS2 Monolayer
Y Kang, S Najmaei, Z Liu, Y Bao, Y Wang, X Zhu, NJ Halas, P Nordlander, ...
Advanced Materials 26 (37), 6467-6471, 2014
4672014
Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide
Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ...
Nano letters 14 (2), 442-449, 2014
4442014
Strain and structure heterogeneity in MoS 2 atomic layers grown by chemical vapour deposition
Z Liu, M Amani, S Najmaei, Q Xu, X Zou, W Zhou, T Yu, C Qiu, ...
Nature communications 5 (1), 1-9, 2014
4042014
Synthesis and photoresponse of large GaSe atomic layers
S Lei, L Ge, Z Liu, S Najmaei, G Shi, G You, J Lou, R Vajtai, PM Ajayan
Nano letters 13 (6), 2777-2781, 2013
3552013
Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across Schottky barriers
H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye
ACS nano 8 (1), 1031-1038, 2014
2402014
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
M Amani, ML Chin, AG Birdwell, TP O’Regan, S Najmaei, Z Liu, ...
Applied Physics Letters 102 (19), 193107, 2013
2342013
Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses
S Najmaei, Z Liu, PM Ajayan, J Lou
Applied Physics Letters 100 (1), 013106, 2012
2232012
Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS2 with resonant plasmonic nanoshells
A Sobhani, A Lauchner, S Najmaei, C Ayala-Orozco, F Wen, J Lou, ...
Applied Physics Letters 104 (3), 031112, 2014
2172014
An atomically layered InSe avalanche photodetector
S Lei, F Wen, L Ge, S Najmaei, A George, Y Gong, W Gao, Z Jin, B Li, ...
Nano letters 15 (5), 3048-3055, 2015
2092015
Temperature-dependent phonon shifts in monolayer MoS2
NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ...
Applied Physics Letters 103 (9), 093102, 2013
2092013
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films
H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye
Nano letters 13 (6), 2640-2646, 2013
2052013
Facile synthesis of single crystal vanadium disulfide nanosheets by chemical vapor deposition for efficient hydrogen evolution reaction
J Yuan, J Wu, WJ Hardy, P Loya, M Lou, Y Yang, S Najmaei, M Jiang, ...
Advanced Materials 27 (37), 5605-5609, 2015
1962015
Plasmonic Pumping of Excitonic Photoluminescence in Hybrid MoS2–Au Nanostructures
S Najmaei, A Mlayah, A Arbouet, C Girard, J Leotin, J Lou
ACS nano 8 (12), 12682-12689, 2014
1942014
Photoluminescence quenching and charge transfer in artificial heterostacks of monolayer transition metal dichalcogenides and few-layer black phosphorus
J Yuan, S Najmaei, Z Zhang, J Zhang, S Lei, PM Ajayan, BI Yakobson, ...
Acs Nano 9 (1), 555-563, 2015
1552015
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