Trapping effects and microwave power performance in AlGaN/GaN HEMTs SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ...
IEEE Transactions on Electron Devices 48 (3), 465-471, 2001
813 2001 Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy PB Klein, SC Binari, K Ikossi, AE Wickenden, DD Koleske, RL Henry
Applied Physics Letters 79 (21), 3527-3529, 2001
368 2001 Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN DD Koleske, AE Wickenden, RL Henry, ME Twigg
Journal of crystal growth 242 (1-2), 55-69, 2002
353 2002 GaN decomposition in H2 and N2 at MOVPE temperatures and pressures DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg
Journal of crystal growth 223 (4), 466-483, 2001
277 2001 The growth and properties of Al and AlN films on GaN (0001)–(1× 1) VM Bermudez, TM Jung, K Doverspike, AE Wickenden
Journal of Applied Physics 79 (1), 110-119, 1996
233 1996 Growth model for GaN with comparison to structural, optical, and electrical properties DD Koleske, AE Wickenden, RL Henry, WJ DeSisto, RJ Gorman
Journal of Applied Physics 84 (4), 1998-2010, 1998
229 1998 Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors PB Klein, JA Freitas Jr, SC Binari, AE Wickenden
Applied Physics Letters 75 (25), 4016-4018, 1999
228 1999 Fabrication and characterization of GaN FETs SC Binari, W Kruppa, HB Dietrich, G Kelner, AE Wickenden, JA Freitas Jr
Solid-State Electronics 41 (10), 1549-1554, 1997
220 1997 GaN FETs for microwave and high-temperature applications SC Binari, K Doverspike, G Kelner, HB Dietrich, AE Wickenden
Solid-State Electronics 41 (2), 177-180, 1997
198 1997 Biosensor technologies for augmented brain–computer interfaces in the next decades LD Liao, CT Lin, K McDowell, AE Wickenden, K Gramann, TP Jung, ...
Proceedings of the IEEE 100 (Special Centennial Issue), 1553-1566, 2012
194 2012 The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation VM Bermudez, DD Koleske, AE Wickenden
Applied surface science 126 (1-2), 69-82, 1998
177 1998 Resistivity control in unintentionally doped GaN films grown by MOCVD AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi
Journal of crystal growth 260 (1-2), 54-62, 2004
145 2004 The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition AE Wickenden, DK Wickenden, TJ Kistenmacher
Journal of applied physics 75 (10), 5367-5371, 1994
127 1994 Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors PB Klein, SC Binari, K Ikossi-Anastasiou, AE Wickenden, DD Koleske, ...
Electronics Letters 37 (10), 1, 2001
124 2001 Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress JA Mittereder, SC Binari, PB Klein, JA Roussos, DS Katzer, DF Storm, ...
Applied Physics Letters 83 (8), 1650-1652, 2003
116 2003 Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors PB Klein, SC Binari, JA Freitas Jr, AE Wickenden
Journal of Applied Physics 88 (5), 2843-2852, 2000
113 2000 Persistent photoconductivity in G Beadie, WS Rabinovich, AE Wickenden, DD Koleske, SC Binari, ...
Applied physics letters 71 (8), 1092-1094, 1997
112 1997 Enhanced GaN decomposition in DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ...
Applied physics letters 73 (14), 2018-2020, 1998
103 1998 Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy AJ Ptak, LJ Holbert, L Ting, CH Swartz, M Moldovan, NC Giles, TH Myers, ...
Applied Physics Letters 79 (17), 2740-2742, 2001
97 2001 Composition and structure of the GaN {0001}-(1× 1) surface MM Sung, J Ahn, V Bykov, JW Rabalais, DD Koleske, AE Wickenden
Physical Review B 54 (20), 14652, 1996
90 1996 